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| FLM8596-15F X-Band Internally Matched FET FEATURES High Output Power: P1dB=42.0dBm(Typ.) High Gain: G1dB=7.5dB(Typ.) High PAE: add=32%(Typ.) Broad Band: 8.5~9.6GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed Package DESCRIPTION The FLM8596-15F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25OC) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Rating 15 -5 57.7 -65 to +175 175 Unit V V W oC oC Recommended Operating Condition(Case Temperature Tc=25OC) Item DC Input Voltage Gate Current Gate Current Symbol VDS IGS IGR RG=50 RG=50 Condition Limit Unit V mA mA 10 16.7 -3.62 ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25OC) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Symbol IDSS gm Vp VGSO P1dB G1dB Idsr add G Rth Tch Test Conditions VDS=5V, VGS=0V VDS=5V, IDS=2.4A VDS=5V, IDS=240mA IGS=-300A Min. -0.5 -5.0 41.0 6.5 - Limit Typ. 7.2 4500 -1.5 42.0 7.5 4.0 32 2.3 - Max. 10.8 -3.0 5.0 1.2 2.6 100 Unit A mS V V dBm dB A % dB o Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness Thermal Resistance Channel Temperature Rise VDS=10V f=8.5 - 9.6 GHz IDS=0.5Idss Zs=ZL=50 Channel to Case 10V X Idsr X Rth C/W o C CASE STYLE: IB ESD Class 2000V~ G.C.P.:Gain Compression Point Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k) Edition 1.2 September 2004 1 FLM8596-15F X-Band Internally Matched FET POWER DERATING CURVE OUTPUT POWER & POWER ADDED EFFICIENCY vs. INPUT POWER Vds=10V, Ids=0.5Idss, f=9.05GHz 60 Total Power Dissipation [W] 50 40 30 20 10 0 0 50 100 150 200 Case Temperature [ oC] Output Power [dBm] 44 42 40 38 36 34 32 30 28 20 22 24 26 28 30 32 34 36 38 Input Power [dBm] P.A.E. Pout 80 Power Added Efficiency [%] 70 60 50 40 30 20 10 0 OUTPUT POWER vs. FREQUENCY Vds=10V, Ids=0.5Idss 44 42 40 Pout (dBm) 38 36 34 32 30 28 8.2 8.4 8.6 8.8 9.0 9.2 9.4 9.6 9.8 Freq. (GHz) P1dB Pin=36dBm Pin= 32dBm Pin= 28dBm Pin= 22dBm 2 FLM8596-15F X-Band Internally Matched FET S-PARAMETER +50j +25j 9. 05 +90 +100j +10j 9. 05 9. 6 9. 6 +250j 0 8.5G H z 8. H z 5G 9.6 180 4 2 Scale for |S21| 9.6 8.5GHz 0 9.05 -10j 25 10 -250j 0.2 9.05 Scale for |S 12| 8.5GHz -25j -100j S 11 S 22 -50j 0.4 -90 S 12 S 21 VDS=10V, IDS=0.5Idss Freq. GHz 8. 4 8. 5 8. 6 8. 7 8. 8 8. 9 9. 0 9. 1 9. 2 9. 3 9. 4 9. 5 9. 6 9. 7 S 11 M ag 0. 795 0. 777 0. 753 0. 718 0. 682 0. 639 0. 612 0. 569 0. 545 0. 514 0. 499 0. 477 0. 461 0. 445 S 21 A ng -169. 9 178. 3 165. 8 154. 1 140. 5 128. 7 114. 7 101. 1 87. 9 73. 5 60. 2 44. 5 29. 5 12. 7 S 12 A ng -29. 6 -42. 2 -55. 9 -69. 0 -81. 7 -94. 6 -106. 6 -118. 4 -129. 6 -141. 1 -151. 8 -162. 7 -174. 2 174. 5 M ag 2. 386 2. 459 2. 524 2. 582 2. 583 2. 562 2. 544 2. 530 2. 503 2. 473 2. 470 2. 464 2. 485 2. 526 M ag 0. 031 0. 029 0. 024 0. 024 0. 024 0. 027 0. 031 0. 035 0. 039 0. 044 0. 048 0. 051 0. 054 0. 061 A ng 47. 6 29. 9 5. 6 -28. 6 -55. 5 -85. 8 -108. 8 -132. 1 -149. 9 -164. 7 -178. 2 168. 8 158. 0 145. 6 S 22 M ag A ng 0. 318 0. 268 0. 244 0. 257 0. 298 0. 354 0. 402 0. 439 0. 467 0. 481 0. 494 0. 500 0. 499 0. 496 -127. 4 -149. 3 -177. 6 151. 5 126. 6 107. 8 93. 8 83. 6 75. 2 69. 1 64. 4 60. 7 58. 2 55. 9 3 FLM8596-15F X-Band Internally Matched FET Package Out Line CASE STYLE: IB Unit : mm PIN ASSIGMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE 4 FLM8596-15F X-Band Internally Matched FET For further information please contact : CAUTION Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL +81-45-853-8156 FAX +81-45-853-8170 Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put these products into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. (c) 2004 Eudyna Devices USA Inc. Printed in U.S.A. 5 |
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