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| SHINDENGEN HVX-2 Series Power MOSFET N-Channel Enhancement type 2SK2664 ( F3V90HVX2 ) 900V 3A FEATURES *oe Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. *oe static Rds(on) is small. The *oe switching time is fast. The *oe Avalanche resistance guaranteed. APPLICATION *oe Switching power supply of AC 240V input OUTLINE DIMENSIONS Case : TO-220 (Unit : mm) *oe High voltage power supply *oe Inverter RATINGS *oeAbsolute Maximum Ratings * = 25*Z*j Tc i Item Symbol Conditions Ratings Storage Temperature Tstg -55*150 Channel Temperature Tch 150 Drain-Source Voltage VDSS 900 Gate-Source Voltage VGSS *}30 Continuous Drain Current* C*j D i D I 3 Continuous Drain Current* eak) P i IDP Pulse width*...10Es, Duty cycle*...1/100 6 Continuous Source Current* C*j D i IS 3 Total Power Dissipation PT 50 Repetitive Avalanche Current IAR Tch= 150*Z 3 Single Avalanche Energy EAS Tch= 25*Z 48 Repetitive Avalanche Energy EAR Tch= 25*Z 4.8 Mounting Torque * iRecommended torque * 0.3 Nm *j 0.5 F TOR Units *Z V A W A mJ Nm Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd HVX-2 Series Power MOSFET Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Tranconductance Static Drain-Source On-tate Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage jc Thermal Resistance Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff Conditions 2SK2664 ( F3V90HVX2 ) Min. 900 Typ. Max. 250 0.1 1.5 2.5 2.5 3.5 3.0 4.7 3.5 1.5 2.5 Unit V A S V / nC pF 70 230 ns ID = 1mA, VGS = 0V VDS = 900V, VGS = 0V VGS = 30V, VDS = 0V ID = 1.5A, VDS = 10V ID =1.5A, VGS = 10V ID = 1mA, VDS = 10V IS = 1.5A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 3A VDS = 25V, VGS = 0V, f = 1MHZ ID = 1.5A, RL = 100, VGS = 10V 30 630 16 67 40 140 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SK2664 6 Tc = -55C 5 Transfer Characteristics 25C Drain Current ID [A] 4 100C 3 150C 2 1 VDS = 25V TYP 0 0 5 10 15 20 Gate-Source Voltage VGS [V] 2SK2664 100 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [] 10 ID = 1.5A 1 0.1 VGS = 10V pulse test TYP -50 0 50 100 150 Case Temperature Tc [C] 2SK2664 6 Gate Threshold Voltage 5 Gate Threshold Voltage VTH [V] 4 3 2 1 VDS = 10V ID = 1mA TYP -50 0 50 100 150 0 Case Temperature Tc [C] 2SK2664 10 Safe Operating Area 100s 1 200s Drain Current ID [A] R DS(ON) limit 0.1 1ms 10ms DC 0.01 Tc = 25C Single Pulse 0.001 1 10 100 1000 Drain-Source Voltage VDS [V] 2SK2664 Transient Thermal Impedance 10 1 Transient Thermal Impedance jc(t) [C/W] 0.1 0.01 10-4 10-3 10-2 10-1 100 101 Time t [s] 2SK2664 100 Single Avalanche Energy Derating Single Avalanche Energy Derating [%] 80 60 40 20 0 0 50 100 150 Starting Channel Temperature Tch [C] 2SK2664 10000 Capacitance 1000 Ciss Capacitance Ciss Coss Crss [pF] 100 Coss Crss 10 f=1MHz Ta=25C TYP 1 0 20 40 60 80 100 Drain-Source Voltage VDS [V] 2SK2664 Single Avalanche Current - Inductive Load VDD = 100V VGS = 15V 0V Rg = 70 10 IAS = 3A EAR = 4.8mJ EAS = 48mJ Single Avalanche Current IAS [A] 1 0.1 0.1 1 10 100 Inductance L [mH] 2SK2664 100 Power Derating 80 Power Derating [%] 60 40 20 0 0 50 100 150 Case Temperature Tc [C] 2SK2664 500 Gate Charge Characteristics 20 VDS Drain-Source Voltage VDS [V] VGS VDD = 400V 300 200V 100V 15 10 200 5 100 ID = 3A TYP 0 0 10 20 30 40 0 50 Gate Charge Qg [nC] Gate-Source Voltage VGS [V] 400 |
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