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| 2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3302 Switching Regulator, DC-DC Converter Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 11.5 (typ.) High forward transfer admittance: |Yfs| = 0.4 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 500 V) Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) * * * * Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 30 0.5 1.5 1.3 14.3 0.5 0.13 150 -55~150 Unit V V V A W mJ A mJ C C Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA Weight: 1.9 g (typ.) 2-8MIB Thermal Characteristics Characteristics Thermal resistance, channel to ambient Symbol Rth (ch-a) Max 96.1 Unit C/W Note 1: Please use devise on condition that the channel temperature is below 150C. Note 2: VDD = 90 V, Tch = 25C, L = 100 mH, RG = 25 W, IAR = 0.5 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-09-04 2SK3302 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) iYfsi Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD ~ 400 V, VGS = 10 V, ID = 0.5 A VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 mA, VGS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 0.25 A VDS = 10 V, ID = 0.25 A Min 3/4 30 3/4 500 2.0 3/4 0.2 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 10 0.4 75 7 24 11 Max 10 3/4 100 3/4 4.0 18 3/4 3/4 3/4 pF Unit mA V mA V V W S 3/4 10 V VGS 0V 4.7 9 ID = 0.25 A VOUT RL = 1 kW 3/4 3/4 3/4 ns 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Turn-ON time Switching time Fall time 18 54 3/4 3/4 3/4 3/4 3/4 nC Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge VDD ~ 250 V Duty < 1%, tw = 10 ms = 95 3.8 1.9 1.9 Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition 3/4 3/4 IDR = 0.5 A, VGS = 0 V IDR = 0.5 A, VGS = 0 V, dIDR/dt = 100 A/ms Min 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 190 380 Max 0.5 1.5 -1.5 3/4 3/4 Unit A A V ns nC Marking K3302 Type Lot Number Month (starting from alphabet A) Year (last number of the christian era) 2 2002-09-04 2SK3302 ID - VDS 0.5 Common source Ta = 25C 0.4 Pulse test 8 10 1.0 5.5 6 5 0.8 10 ID - VDS 6 5.75 5.5 0.6 8 Common source Ta = 25C Pulse test (A) ID 0.3 ID (A) 4.75 5.25 5 4.75 Drain current Drain current 0.2 4.5 4.25 0.4 0.1 VGS = 3.75 V 0.2 4 0 0 4.5 4.25 VGS = 4 V 40 50 0 0 2 4 6 8 10 10 20 30 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 1.0 Common source 0.8 VDS = 20 V Pulse test 25 0.6 100 0.4 Ta = -55C 20 VDS - VGS Common source (V) Ta = 25C 16 Pulse test (A) ID VDS Drain-source voltage 12 8 Drain current ID = 0.5 A 0.2 4 0.25 0.12 0 0 2 4 6 8 10 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 1 30 RDS (ON) - ID Forward transfer admittance |Yfs| (S) Ta = -55C Drain-source ON resistance RDS (ON) (9) 0.5 100 0.3 25 Common source VDS = 20 V Pulse test 0.1 0.05 0.1 0.3 0.5 1 10 5 3 Common source Ta = 25C Pulse test 1 0.01 0.03 0.05 0.1 0.3 0.5 1 Drain current ID (A) Drain current ID (A) 3 2002-09-04 2SK3302 RDS (ON) - Ta 40 Common source VGS = 10 V 32 Pulse test ID = 0.1 A 24 1 Common source 0.5 Tc = 25C 0.3 Pulse test IDR - VDS Drain-source ON resistance RDS (ON) (9 Drain reverse current IDR (A) 0.5 0.25 0.1 0.05 0.03 10 3 1 0.6 VGS = 0, -1 V 0.8 1.0 1.2 16 8 0 -80 -40 0 40 80 120 160 0.01 0 0.2 0.4 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 300 5 Vth - Ta Common source 100 (pF) Ciss Gate threshold voltage Vth (V) 4 VDS = 10 V ID = 1 mA Pulse test 50 30 Capacitance C 3 10 5 Common source 3 VGS = 0 V f = 1 MHz Ta = 25C 1 0.1 0.3 0.5 1 Coss 2 1 Crss 3 5 10 30 50 100 Drain-source voltage VDS (V) 0 -80 -40 0 40 80 120 160 Ambient temperature Ta (C) PD - Ta 1.6 500 Dynamic input/output characteristics Common source ID = 0.5 A Ta = 25C Pulse test 20 (W) (V) 400 PD VDS Drain power dissipation Drain-source voltage 0.8 200 200 400 8 0.4 100 VGS 4 0 0 40 80 120 160 200 0 0 2 4 6 8 0 10 Ambient temperature Ta (C) Total gate charge Qg (nC) 4 2002-09-04 Gate-source voltage 300 12 VGS 1.2 VDD = 100 V VDS 16 (V) 2SK3302 rth - tw 3 Normalized transient thermal impedance 1 0.5 0.3 Duty = 0.5 0.2 0.1 0.1 0.05 0.03 0.05 0.02 0.01 Single pulse PDM 0.01 0.005 0.003 t T Duty = t/T Rth (ch-a) = 96.1C/W 1m 10 m 100 m 1 10 100 rth (t)/Rth (ch-a) 0.001 100 m Pulse width tw (s) Safe operating area 10 20 EAS - Tch (mJ) Avalanche energy EAS ID max (pulsed) * (V) 100 ms * 1 ms * 16 1 ID max (continuous) VDS 12 Drain-source voltage 0.1 DC operation Ta = 25C 8 0.01 * Single nonrepetitive pulse Ta = 25C Curves must be derated linearly with increase in temperature. 0.001 0.1 1 10 VDSS max 100 1000 4 0 25 50 75 100 125 150 Channel temperature Tch (C) Drain current ID (A) 15 V -15 V BVDSS IAR VDD VDS Test circuit RG = 25 W VDD = 90 V, L = 100 mH Wave form E AS = ae o B VDSS 1 c / x L x I2 x c / 2 e B VDSS - VDD o 5 2002-09-04 2SK3302 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-09-04 |
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