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Ordering number:EN4983 FC18 TR:NPN Epitaxial Planar Silicon Transistor FET:N-Channel Junction Silicon FET High-Frequency Amp, AM Amp, Low-Frequency Amp Applications Features * Composed of 2 chips, one being equivalent to the 2SK2394 and the other the 2SC4639, in the convertional CP package, improving the mounting efficiency greatly. * Drain and emitter are shared. Package Dimensions unit:mm 2122 [FC18] Electrical Connection 1:Collector 2:Gate 3:Source 4:Emitter/Drain 5:Base SANYO:XP5 Specifications Absolute Maximum Ratings at Ta = 25C Parameter [FET] Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation [Common Ratings] Total Dissipation Junction Temperature Storage Temperature PT Tj Tstg 300 150 -55 to +150 mW C C Symbol VDSX VGDS IG ID PD VCBO VCEO VEBO IC I CP IB PC Conditions Ratings 15 -15 10 50 200 55 50 6 150 300 30 200 Unit V V mA mA mW V V V mA mA mA mW * Marking:18 Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/42695MO(KOTO) BX-1576 No.4983-1/5 FC18 Continued from preceding page. Electrical Characteristics at Ta = 25C Parameter [FET] G-D Breakdown Voltage Gate Cutoff Current Cutoff Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Noise Figure [TR] Collector Cuttoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Turn-ON Time Storage Time Fall Time ICBO IEBO hFE fT Co b VCE(sat) VBE(sat) VCB=35V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA VCE=6V, IC=10mA VCB=6V, f=1MHz IC=50mA, IB=5mA IC=50mA, IB=5mA 55 50 6 0.15 0.75 0.20 135 200 1.7 0.08 0.8 0.4 1.0 0.1 0.1 400 MHz pF V V V V V s s s A A V(BR)GDS IG=-10A, VDS=0 IGSS VGS=-10V, VDS=0 VGS(off) IDSS | Yfs | Ciss Crss NF VDS=5V, ID=100A VDS=5V, VGS=0 VDS=5V, VGS=0, f=1kHz VDS=5V, VGS=0, f=1MHz VDS=5V, VGS=0, f=1MHz VDS=5V, Rg=1k, ID=1mA, f=1kHz -15 -1.0 -0.3 6.0* 20 38 10.0 2.9 1.0 -0.7 -1.5 32.0* V nA V mA mS pF pF dB Symbol Conditions Ratings min typ max Unit V(BR)CBO IC=10A, IE=0 V(BR)CEO IC=1mA, RBE= V(BR)EBO ton tstg tf IE=10A, IC=0 See specified Test Circuit See specified Test Circuit See specified Test Circuit Note*:The FC18 is classified by IDSS as follows : (unit:mA) 6.0 F 120 10.0 G 20.0 16.0 H 32.0 Marking:18 IDSS rank:F, G, H The specifications shown above are for each individual FET or transistor. Switching Time Test CIrcuit No.4983-2/5 FC18 No.4983-3/5 FC18 No.4983-4/5 FC18 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.4983-5/5 |
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