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| MITSUBISHI Nch POWER MOSFET e. tion. cifica t to chang c al spe t a fins are subje o is is nic limit e: Th tr Notice parame Som P MIN RELI ARY FS10KMA-5A HIGH-SPEED SWITCHING USE FS10KMA-5A OUTLINE DRAWING 10 0.3 6.5 0.3 3 0.3 Dimensions in mm 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 0.75 0.15 2.54 0.25 2.54 0.25 4.5 0.2 2.6 0.2 q 10V DRIVE q VDSS ............................................................................... 250V q rDS (ON) (MAX) ............................................................. 0.52 q ID ......................................................................................... 10A GATE DRAIN SOURCE TO-220FN APPLICATION CS Switch for CRT Display monitor MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA PD Tch Tstg Viso -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V Conditions Ratings 250 20 10 30 10 32 -55 ~ +150 -55 ~ +150 2000 2.0 Unit V V A A A W C C V g Sep.1998 L = 200H AC for 1minute, Terminal to case Typical value MITSUBISHI Nch POWER MOSFET e. tion. cifica t to chang c al spe t a fins are subje o is is nic limit e: Th tr Notice parame Som P MIN RELI ARY FS10KMA-5A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter Drain-source breakdown voltage (Tch = 25C) Test conditions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 250V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 250 -- -- 2.0 -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 3.0 0.40 2.00 9.0 950 90 25 20 25 150 40 0.95 -- Max. -- 10 1 4.0 0.52 2.60 -- -- -- -- -- -- -- -- -- 3.91 Unit V A mA V V S pF pF pF ns ns ns ns V C/W Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 150V, ID = 5A, VGS = 10V, RGEN = RGS = 50 IS = 5A, VGS = 0V Channel to case Sep.1998 |
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