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| HSB123 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-487(Z) Rev 0 Features * Low capacitance, proof against high voltage. * Fast recovery time. * CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSB123 Laser Mark A9 Package Code CMPAK Outline HSB123 Absolute Maximum Ratings (Ta = 25C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Symbol VRM VR I *1 FM *2 Value 85 80 300 4 100 125 -55 to +125 Unit V V mA A mA C C I FSM I O*1 Tj Tstg Notes: 1. Two device total. 2. Value at duration of 1sec, two device total. Electrical Characteristics (Ta = 25C) *1 Item Forward voltage Symbol VF1 VF2 VF3 Reverse current Capacitance Reverse recovery time Note: IR C t rr Min -- -- -- -- -- -- Typ -- -- -- -- -- -- Max 1.0 1.0 1.2 0.1 2.0 3.0 A pF ns Unit V Test Condition I F = 10 mA I F = 50 mA I F = 100 mA VR = 80V VR = 0V, f = 1 MHz I F = 10 mA, VR = 6V, RL = 50 1. Per one device. 2 HSB123 Main Characteristic 3 HSB123 Package Dimensions Unit : mm 4 |
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