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| MITSUBISHI TRANSISTOR MODULES QM100HY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM100HY-2H * * * * * IC Collector current ........................ 100A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 (7) 23 10.5 13 10.5 80 23 23 (7) 6.5 C E C 34 C E C 12 E1 B1 B1 M5 Tab#110, t=0.5 E1 6.5 31 LABEL (8) 22.5 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100HY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 100 100 800 5 1000 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.96~2.94 20~30 210 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g -- Mounting torque Mounting screw M6 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=1000V, VEB=2V VCB=1000V, Emitter open VEB=7V IC=100A, IB=2A -IC=100A (diode forward voltage) IC=100A, VCE=2.8V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=600V, IC=100A, IB1=-IB2=2A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 2.0 400 2.5 3.5 1.8 -- 3.0 15 3.0 0.155 0.65 0.075 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100HY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 200 Tj=25C 10 4 7 5 3 2 10 3 7 5 3 2 10 2 7 5 3 2 10 1 VCE=5.0V VCE=2.8V DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT IC (A) 160 IB=2.0A 120 IB=1.0A IB=0.5A 80 IB=0.3A IB=0.1A 40 DC CURRENT GAIN hFE 0 Tj=25C Tj=125C 0 1 2 3 4 5 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.8 2.2 2.6 3.0 3.4 3.8 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 BASE CURRENT IB (A) VCE=2.8V Tj=25C VBE(sat) SATURATION VOLTAGE 10 0 VCE(sat) 7 5 4 3 IB=2A 2 Tj=25C Tj=125C -1 10 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4 IC=150A IC=100A SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 10 2 7 5 3 2 10 1 7 5 3 2 VCC=600V IB1=-IB2=2A Tj=25C Tj=125C ts 3 SWITCHING TIME ton, ts, tf (s) 2 IC=50A IC=70A 1 Tj=25C Tj=125C 0 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 tf ton 10 0 7 5 3 2 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100HY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 10-1 VCC=600V IB1=2A IC=100A REVERSE BIAS SAFE OPERATING AREA 200 COLLECTOR CURRENT IC (A) ts, tf (s) 175 IB2=-2A 150 IB2=-5A 125 100 75 50 25 Tj=125C SWITCHING TIME ts tf Tj=25C Tj=125C 2 3 4 5 7 10 0 2 3 4 5 7 10 1 0 0 200 400 600 800 1000 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 100 tw=50S 100S 90 DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA 200 S 10 1 7 5 3 TC=25C 2 NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 710 1 2 3 4 5 7 0.25 0.2 DC 1mS 80 100 120 140 160 VCE (V) CASE TEMPERATURE TC (C) 10 7 5 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 3 Zth (j-c) (C/ W) 0.15 0.1 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0 0.4 0.8 1.2 0.05 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 Tj=25C Tj=125C 1.6 2.0 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100HY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 1000 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 VCC=600V 5 IB1=-IB2=2.0A Tj=25C 4 Tj=125C 3 2 10 1 7 5 4 3 2 10 0 10 0 2 3 4 5 7 10 1 10 1 800 Irr Qrr 10 0 400 trr 200 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 10 -1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 5 7 1.0 0.8 Zth (j-c) (C/ W) 0.6 0.4 0.2 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999 trr (s) 600 Irr (A), Qrr (c) |
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