View QM150DY-3H_186764.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MITSUBISHI TRANSISTOR MODULES
QM150DY-3H
HIGH POWER SWITCHING USE
INSULATED TYPE
QM150DY-3H
* * * * *
IC Collector current ........................ 150A VCEX Collector-emitter voltage ......... 1400V hFE DC current gain............................. 100 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
113 M6 21.5 25 25
6.5 B2X B2 E2
6 15 6
6 15 6
14
B2X B1X C2E1 E2 C1 12
B2 E2 E1 B1
70
90
C1 C2E1 E2
5.5
5.5 B1X 93 Tab #110, t=0.5 E1 B1
17 8
17
8
17
31
LABEL
7
37.5
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM150DY-3H
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25C, unless otherwise noted)
Conditions IC=1A, VEB=3V VEB=3V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1400 1400 1400 7 150 150 1500 16 1500 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 3000 1.96~2.94 20~30 1.96~2.94 20~30 650 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g
--
Mounting torque Mounting screw M6
--
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25C, unless otherwise noted)
Limits Test conditions VCE=1400V, VEB=3V VCB=1400V, Emitter open VEB=7V IC=150A, IB=3A -IC=150A (diode forward voltage) IC=150A, VCE=5V Min. -- -- -- -- -- -- 100 -- VCC=800V, IC=150A, IB1=-IB2=3A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 15 15 400 3.0 3.5 1.8 -- 3.0 20 3.0 0.08 0.35 0.025 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM150DY-3H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 400 Tj=25C COLLECTOR CURRENT IC (A) 300 DC CURRENT GAIN hFE 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 1 2 Tj=25C Tj=125C DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
IB=10A IB=5A
200
IB=3A IB=1.5A IB=0.6A
VCE=5.0V
VCE=10V
100
0
0
1
2
3
4
5 VCE (V)
2 3 4 5 7 10 2
2 3 4 5 7 10 3
COLLECTOR-EMITTER VOLTAGE
COLLECTOR CURRENT IC (A)
VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 2.2 2.4 2.6 2.8
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 1
BASE CURRENT IB (A)
VBE(sat)
SATURATION VOLTAGE
VCE(sat)
Tj=25C VCE=5.0V 3.0 VBE (V) 3.2
IB=3A Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3
BASE-EMITTER VOLTAGE
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 ton, ts, tf (s) IC=200A 4 3 2
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
ts 10 1 7 5 4 3 2 10 0 7 5 4 3 10 1
3
tf ton
2 IC=100A 1 Tj=25C Tj=125C 0 10 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 IC=150A
SWITCHING TIME
VCC=800V IB1=-IB2=3A Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 IC (A)
BASE CURRENT IB (A)
COLLECTOR CURRENT
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM150DY-3H
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE CURRENT (TYPICAL)
3 2
REVERSE BIAS SAFE OPERATING AREA
400 Tj=125C
COLLECTOR CURRENT IC (A)
ts, tf (s)
350 300 250 200 150 100 50 0 0 400 800 1200 1600 2000 IB2=-3A
SWITCHING TIME
10 1 7 5 4 3 2 10 0 7 5 4 3 VCC=800V IC=150A IB1=3A Tj=25C Tj=125C 3 4 5 7 10 0 2 3 4 5 7 10 1
ts
tf
23
BASE REVERSE CURRENT -IB2 (A)
COLLECTOR-EMITTER VOLTAGE
VCE (V)
FORWARD BIAS SAFE OPERATING AREA
10 3 7 5 3 2 10 2 7 5 3 2
D C
DERATING FACTOR OF F. B. S. O. A.
100 90
COLLECTOR CURRENT IC (A)
SECOND BREAKDOWN AREA
DERATING FACTOR (%)
50 s
80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 COLLECTOR DISSIPATION
10 1 7 5 3 2 TC=25C 10 0 NON-REPETITIVE 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 2
COLLECTOR-EMITTER VOLTAGE
COLLECTOR REVERSE CURRENT -IC (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 710 1 0.10
1m s
20 0 s
50 0 s
VCE (V)
CASE TEMPERATURE
TC (C)
0.08
10 7 5 3 2
REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 3
Zth (j-c) (C/ W)
0.06
0.04
10 2 7 5 3 2 10 1 7 5 3 2 10 0 0 0.5 1
0.02 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0
Tj=25C Tj=125C 1.5 2
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM150DY-3H
HIGH POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 1500
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 3 7 5 3 2 Irr (A), Qrr (c) 10 2
Irr
1000
500
0 10 0
2 3 4 5 7 10 1
2 3 4 5 7 10 2
10 2 10 1 7 5 Qrr 3 2 VCC=800V IB1=-IB2=3A 10 1 10 0 Tj=25C trr 7 Tj=125C 5 3 2 10 0 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A)
CONDUCTION TIME (CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 710 1 2 3 4 5 7 0.40
0.32 Zth (j-c) (C/ W)
0.24
0.16
0.08 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s)
Feb.1999
trr (s)

▲Up To Search▲

Price & Availability of QM150DY-3H

	To Download QM150DY-3H Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .