 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MITSUBISHI TRANSISTOR MODULES QM15KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM15KD-HB * * * * * IC Collector current .......................... 15A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 250 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm R6 11 11 11 12.5 10.5 10.5 18.5 BuP BvP BwP K P 2-5.5 KP 30 18 9 U V W 42 BuP R S T U BuN A T S R N BuN BvN BwN BvP V BvN BwP W BwN N 18 93 110 18 15 8 A (24.45) LABEL 6.5 Tab#110, t=0.5 Tab#250, t=0.8 15 (23.6) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM15KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) (Inverter part, Tj=25C) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 15 15 76 1 150 Unit V V V V A A W A A ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM Ea IO IFSM I2t Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Recommended AC input voltage DC output current Surge (non-repetitive) forward current I2t for fusing (Converter part, Tj=25C) Conditions Ratings 800 900 220 Three phase full wave rectifying circuit, Tc=79C One half cycle at 60 Hz, peak value Value for one cycle of surge current 30 300 375 Unit V V V A A A2s ABSOLUTE MAXIMUM RATINGS Symbol Tj Tstg Viso -- -- Parameter Junction temperature Storage temperature Isolation voltage Mounting torque Weight (Common) Conditions Ratings -40~150 -40~125 Charged part to case, AC for 1 minute Mounting screw M5 Typical value 2500 1.47~1.96 15~20 125 Unit C C V N*m kg*cm g ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Inverter part, Tj=25C) Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=15A, IB=60mA -IC=15A (diode forward voltage) IC=15A, VCE=2V Limits Min. -- -- -- -- -- -- 250 -- VCC=300V, IC=15A, IB1=90mA,-IB2=0.3A -- -- Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 40 2.0 2.5 1.5 -- 1.5 10 2.0 1.65 2.8 0.35 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W ELECTRICAL CHARACTERISTICS Symbol IRRM VFM Rth (j-c) Rth (c-f) Parameter Repetitive peak reverse current Forward voltage drop Thermal resistance Contact thermal resistance (Converter part, Tj=25C) Test conditions VR=VRRM, Tj=150C IF=30A Junction to case Case to fin, conductive grease applied Limits Min. -- -- -- -- Typ. -- -- -- -- Max. 5.0 1.3 0.9 0.35 Unit mA V C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM15KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 50 Tj=25C COLLECTOR CURRENT IC (A) DC CURRENT GAIN hFE 40 IB=0.6A 30 IB=200mA IB=60mA IB=40mA 10 IB=20mA 3 2 10 3 7 5 4 3 2 10 2 7 5 4 3 10 0 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) Tj=25C Tj=125C VCE=5.0V VCE=2.0V 20 0 0 1 2 3 4 5 VCE (V) 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR-EMITTER VOLTAGE COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 10 -1 7 5 4 3 2 10 -2 1.2 1.6 2.0 2.4 2.8 VBE (V) 3.2 VCE=2.0V Tj=25C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 IB=60mA Tj=25C 5 Tj=125C 4 3 2 VBE(sat) 10 0 7 5 4 3 2 10 -1 10 0 BASE CURRENT IB (A) SATURATION VOLTAGE VCE(sat) 2 3 4 5 7 10 1 2 3 4 5 7 10 2 BASE-EMITTER VOLTAGE COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4 Tj=25C Tj=125C 10 1 7 5 4 3 2 10 0 7 5 4 3 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (s) ts tf ton 3 2 IC=15A 1 IC=5A IC=10A 0 10 -3 2 3 5 710 -2 2 3 5 710 -1 2 3 5 7 10 0 BASE CURRENT IB (A) SWITCHING TIME 10 -1 10 0 VCC=300V IB1=90mA IB2=-300mA Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 IC (A) COLLECTOR CURRENT Feb.1999 MITSUBISHI TRANSISTOR MODULES QM15KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 10 -2 VCC=300V IB1=90mA IC=15A Tj=25C Tj=125C ts REVERSE BIAS SAFE OPERATING AREA 32 Tj=125C COLLECTOR CURRENT IC (A) ts, tf (s) 28 24 20 16 12 8 4 0 0 100 200 300 400 500 600 700 800 IB2=-0.5A IB2=-3.0A SWITCHING TIME tf 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 2 7 TC=25C 5 NON-REPETITIVE 3 2 DC 10 1 7 5 3 2 100 DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) 10 90 DERATING FACTOR (%) 0 s 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA s 0 50 s 1m tw= 10 ms 10 0 7 5 3 2 10 -1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 80 100 120 140 160 COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (C) COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 710 1 2.0 1.8 1.6 Zth (j-c) (C/ W) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10 -3 2 3 5 710 -2 2 3 5 710 -1 2 3 5 7 10 0 10 2 7 5 4 3 2 10 1 7 5 4 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25C Tj=125C 10 0 0.4 0.8 1.2 1.6 2.0 2.4 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM15KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 200 180 160 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 0 10 1 Irr 100 80 60 40 20 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 Qrr trr 10 0 2 3 4 5 7 10 1 10 -1 2 3 4 5 7 10 2 VCC=300V IB1=90mA IB2=-300mA Tj=25C Tj=125C CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 5 7 10 1 3.2 2.8 2.4 Zth (j-c) (C/ W) 2.0 1.6 1.2 0.8 0.4 0 10 -3 2 3 5 7 10 -2 2 3 5 7 10 -1 2 3 5 7 10 0 TIME (s) Feb.1999 trr (s) 120 Irr (A), Qrr (c) 140 MITSUBISHI TRANSISTOR MODULES QM15KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES (Diode parts) MAXIMUM FORWARD CHARACTERISTIC 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.8 1.2 1.6 2.0 2.4 FORWARD VOLTAGE DROP VF (V) ALLOWABLE SURGE (NON-REPETITIVE) FORWARD CURRENT 500 SURGE (NON-REPETITIVE) FORWARD CURRENT IFSM (A) Tj=25C FORWARD CURRENT IF (A) 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60HZ) MAXIMUM POWER DISSIPATION 100 P (W) 160 TC (C) ALLOWABLE CASE TEMPERATURE VS. DC OUTPUT CURRENT RESISTIVE, INDUCTIVE LOAD RESISTIVE, INDUCTIVE LOAD 80 140 POWER DISSIPATION 60 CASE TEMPERATURE 0 8 16 24 32 IO (A) 40 120 40 100 20 80 0 60 0 8 16 24 32 IO (A) 40 DC OUTPUT CURRENT DC OUTPUT CURRENT Feb.1999 |
Price & Availability of QM15KD-HB
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |