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MITSUBISHI TRANSISTOR MODULES
QM15TG-9B
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM15TG-9B
* * * *
IC Collector current .......................... 15A VCEX Collector-emitter voltage ........... 500V hFE DC current gain............................. 250 Insulated Type
APPLICATION Air conditioner, Small to medium size inverters
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
88 8 8 8 8 8 16.5 2-5.4 Tab#250, t=0.8
25 39
BuP EuP BvP EvP BwP EwP P
16
N BuN 16
U BvN 16 76 64
V
W BwN E(-) 16 16.5 6 2-R6 6.5 Tab#110, t=0.5
P
26.5
BuP EuP U BuN N
BvP EvP V BvN
BwP EwP W BwN E(-)
17
LABEL
16
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15TG-9B
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso -- -- Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight
(Tj=25C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 450 500 500 7 15 15 83 1 150 -40~+150 -40~+125 Charged part to case, AC for 1 minute Mounting screw M5 Typical value 2000 1.47~1.96 15~20 70 Unit V V V V A A W A A C C V N*m kg*cm g
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25C, unless otherwise noted)
Limits Test conditions VCE=500V, VEB=2V VCB=500V, Emitter open VEB=7V IC=15A, IB=60mA -IC=15A (diode forward voltage) IC=15A, VCE=2V Min. -- -- -- -- -- -- 250 -- VCC=250V, IC=15A, IB1=90mA, -IB2=0.3A -- -- Transistor part (per1/6 module) Diode part (per 1/6 module) Conductive grease applied (per 1/6 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 40 2.0 2.5 1.5 -- 1.5 10 2.0 1.5 2.5 0.55 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15TG-9B
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
50 Tj=25C 2 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 0
DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
Tj=25C Tj=125C VCE=5.0V VCE=2.0V
COLLECTOR CURRENT IC (A)
40
30
IB=200mA IB=100mA
IB=60mA
20
10
IB=20mA
IB=10mA
0
DC CURRENT GAIN hFE
0
1
2
3
4
5
2 3 4 5 7 10 1
2 3 4 5 7 10 2
COLLECTOR-EMITTER VOLTAGE
VCE (V)
COLLECTOR CURRENT IC (A)
VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL)
10 0 7 5 4 3 2 10 -1 7 5 4 3 2 10 -2 0.8 1.2 1.6 2.0 2.4 2.8 VCE=2.0V Tj=25C
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 0 Tj=25C Tj=125C VBE(sat) IB=60mA
BASE CURRENT IB (A)
SATURATION VOLTAGE
VCE(sat)
2 3 4 5 7 10 1
2 3 4 5 7 10 2
BASE-EMITTER VOLTAGE
VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
5 4 10 1 7 5 4 3 2 10 0 7 5 4 3 2
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
ton, ts, tf (s)
ts
3 IC=10A 2
SWITCHING TIME
IC=20A
ton
1 Tj=25C Tj=125C IC=15A 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -1 2 3 5 7 10 0
tf
10 -1 10 0
2 3 4 5 7 10 1
VCC=250V IB1=90mA IB2=-300mA Tj=25C Tj=125C 2 3 4 5 7 10 2
BASE CURRENT IB (A)
COLLECTOR CURRENT
IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15TG-9B
MEDIUM POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE CURRENT (TYPICAL)
10 1 7 5 4 3 2 10 0 7 5 4 IC=15A 3 VCC=250V IB1=70mA 2 Tj=25C Tj=125C -1 10 10 -1 2 3 4 5 7 10 0
REVERSE BIAS SAFE OPERATING AREA
30
ts
COLLECTOR CURRENT IC (A)
ts, tf (s)
Tj=125C
SWITCHING TIME
20
IB2=-2A
tf
10
2 3 4 5 7 10 1
0
0
100
200
300
400
500
BASE REVERSE CURRENT -IB2 (A)
COLLECTOR-EMITTER VOLTAGE
VCE (V)
FORWARD BIAS SAFE OPERATING AREA
10 2 7 TC=25C 5 NON-REPETITIVE 3 2 1m s D 10 1 C 7 5 3 2 100 90 100s
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR CURRENT IC (A)
SECOND BREAKDOWN AREA
DERATING FACTOR (%)
50s
80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 COLLECTOR DISSIPATION
10 0 7 5 3 2 10 -1 10 0 2 3 5 710 1 2 3 5 7 10 2 2 3 5 7 10 3
COLLECTOR-EMITTER VOLTAGE
COLLECTOR REVERSE CURRENT -IC (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 7 10 1 2 3 5 7 2.0
20 0 s
VCE (V)
CASE TEMPERATURE
TC (C)
1.6
Zth (j-c) (C/ W)
1.2
10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0
REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL)
Tj=25C Tj=125C
0.8
0.4 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -1 2 3 5 7 10 0
0
0.4
0.8
1.2
1.6
2.0
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15TG-9B
MEDIUM POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 200 180 160 140 120 100 80 60 40 20 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 Irr (A), Qrr (c)
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 1 7 5 4 3 2 Qrr 10 0 7 5 4 3 2 10 -1 10 0 10 0 10 1
Irr trr (s)
trr 2 3 4 5 7 10 1
VCC=250V IB1=90mA IB2=-300mA Tj=25C Tj=125C 10 -1 2 3 4 5 7 10 2
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT IF (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 710 1 2 3 4 5 3.2 2.8 2.4 Zth (j-c) (C/ W) 2.0 1.6 1.2 0.8 0.4 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s)
Feb.1999

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