View XP161A01A8PR_183707.PDF datasheet online --- IC-ON-LINE

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x N-Channel Power MOS FET x DMOS Structure x Low On-State Resistance: 0.18 MAX x Ultra High-Speed Switching x SOT-89 Package
s Applications
q Notebook PCs q Cellular and portable phones q On-board power supplies q Li-ion battery systems
s General Description
The XP161A01A8PR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOT-89 package makes high density mounting possible.
s Features
Low on-state resistance: Rds(on)=0.11(Vgs=10V) Rds(on)=0.18(Vgs=4.5V) Ultra high-speed switching Operational Voltage: 4.5V High density mounting: SOT-89
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s Pin Configuration s Pin Assignment
PIN NUMBER 1 2 3
1 G 2 D 3 S
PIN NAME G D S
FUNCTION Gate Drain Source
SOT-89 (TOP VIEW)
s Equivalent Circuit
s Absolute Maximum Ratings
PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS 30 20 3 9 3 2 150 -55~150
Ta=25C UNITS V V A A A W C C
1
2
3
Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature
N-Channel MOS FET (1 device built-in)
Note: When implemented on a glass epoxy PCB
s Electrical Characteristics
DC characteristics
PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance (note) Forward Transfer Admittance (note) Body Drain Diode Forward Voltage
Note: Effective during pulse test.
Ta=25: SYMBOL Idss Igss Vgs(off) Rds(on) Yfs Vf CONDITIONS Vds=30V, Vgs=0V Vgs=20V, Vds=0V Id=1mA, Vds=10V Id=1.5A, Vgs=10V Id=1.5A, Vgs=4.5V Id=1.5A, Vds=10V If=3A, Vgs=0V MIN TYP MAX 10 10 1.0 0.08 0.14 3.5 0.85 1.1 0.11 0.18 UNITS A A V S V
Dynamic characteristics
PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds=10V, Vgs=0V f=1MHz MIN TYP 220 140 55 MAX
Ta=25: UNITS pF pF pF
u
Switching characteristics
PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td (on) tr td (off) tf Vgs=5V, Id=1.5A Vdd=10V CONDITIONS MIN TYP 15 15 25 15 MAX Ta=25: UNITS ns ns ns ns
Thermal characteristics
PARAMETER Thermal Resistance (channel-surroundings) SYMBOL Rth (ch-a) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 62.5 MAX UNITS C/W
Drain Current vs. Drain /Source Voltage
Pulse Test, Ta=25:
Drain Current vs. Gate/Source Voltage
Pulse Test, Vds=10V
Drain Current:Id (A)
Drain/Source Voltage:Vds (V)
Drain Current:Id (A)
Gate/Source Voltage:Vgs (V)
Drain/Source On-State Resistance vs. Gate/Source Voltage
Pulse Test, Ta=25:
Drain/Source On-State Resistance vs. Drain Current
Pulse Test, Ta=25:
u
Drain /Source On-State Resistance :Rds (on) ()
Gate/Source Voltage:Vgs (V)
Drain/Source On-State Resistance :Rds (on) ()
Drain Current:Id (A)
Drain/Source On-State Resistance vs. Ambient Temp.
Pulse Test
Gate/Source Cut Off Voltage Variance vs. Ambient Temp.
Ambient Temperature:Topr (:)
Gate/Source Cut Off Voltage Variance :Vgs (off) Variance (V)
Drain/Source On-State Resistance :Rds (on) ()
Ambient Temperature:Topr (:)
Drain/Source Voltage vs. Capacitance
Vgs=0V, f=1MHz
Switching Time vs. Drain Current
Vgs=5V, Vdd 10V, PW=10sec. duty 1%
Capacitance:Ciss, Coss, Crss (pF)
Switching Time:t (ns)
Drain/Source Voltage:Vds (V)
Drain Current:Id (A)
Gate/Source Voltage vs. Gate Charge
Vds=10V, Id=3A
Reverse Drain Current vs. Source/Drain Voltage
Pulse Test
Gate/Source Voltage:Vgs (V)
Reverse Drain Current:Id (A)
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Gate Charge:Qg (nc)
Source/Drain Voltage:Vsd (V)
Standardized Transition Thermal Resistance vs. Pulse Width
Rth (ch-a)=62.5C/W, (Implemented on a glass epoxy PCB)
Single Pulse
Pulse Width:PW (sec)

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