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| Advanced Small Signal MOSFET FEATURES ! Lower RDS(on) ! Improved Inductive Ruggedness ! Fast Switching Times ! Lower Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability 2N7002MTF BVDSS = 60 V RDS(on) = 5.0 ID = 200 mA SOT-23 Product Summary Part Number 2N7002 BVDSS 60V RDS(on) 5.0 ID 115mA 1.Gate 2. Source 3. Drain Absolute Maximum Ratings Symbol VDSS ID IDM VGS PD TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25) Continuous Drain Current (TC=100) Drain Current-Pulsed Gate-to-Source Voltage Total Power Dissipation (TC=25) Linear Derating Factor Operating Junction and Storage Temperature Range Value 60 115 73 800 20 0.2 0.16 - 55 to +150 Units V mA mA V W W/ Thermal Resistance Symbol RJA Characteristic Junction-to-Ambient Typ. -Max. 62.5 Units /W Rev. A1 2N7002MTF Symbol BVDSS VGS(th) IGSS Characteristic Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage, Forward Gate-Source Leakage, Reverse Min. 60 1.0 IDSS ID(ON) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Drain-to-Source Leakage Current On-State Drain-Source Current Static Drain-Source On-State Resistance 0.5 0.08 500 5.0 50 25 5 20 20 ns pF A S Typ. - N-CHANNEL Small Signal MOSFET Electrical Characteristics (TC=25 unless otherwise specified) Max. Units 2.5 100 nA -100 1.0 A V V Test Condition VGS = 0V, ID = 250A VDS = VGS, ID = 250A VGS = 20V VGS = -20V VGS = 40V VGS = 40V, TC = 125 VDS = 10V, VGS = 10V VGS = 10V, ID = 0.5A VDS = 15V, ID = 0.2A VDS = 25V, VGS = 0V, f = 1.0MHz Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDD = 30V, ID = 0.2A RG = 25 Source-Drain Diode Ratings and Characteristics Symbol IS ISD VSD Characteristic Continuous Source Current Pulse Source Current Diode Forward Voltage Min. Typ. Max. Units 115 800 1.5 mA mA V Test Condition Integral reverse pn-diode In the MOSFET TA = 25 , IS = 115mA VGS = 0V Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature Pulse Test : Pulse Width = 250s, Duty Cycle 2% Essentially Independent of Operating Temperature N-CHANNEL Small Signal MOSFET 2N7002MTF 2N7002MTF N-CHANNEL Small Signal MOSFET |
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