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PD - 91650A FA57SA50LC HEXFET(R) Power MOSFET l l l l l l l l l Fully Isolated Package Easy to Use and Parallel Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Gate Charge Device Low Drain to Case Capacitance Low Internal Inductance D VDSS = 500V RDS(on) = 0.08 G ID = 57A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-227 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 500 watts. The low thermal resistance of the SOT-227 contribute to its wide acceptance throughout the industry. S O T -2 2 7 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG VISO Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Insulation Withstand Voltage (AC-RMS) Mounting torque, M4 srew Max. 57 36 228 625 5.0 20 725 57 62.5 3.0 -55 to + 150 2.5 1.3 Units A W W/C V mJ A mJ V/ns C kV N*m Thermal Resistance Parameter RJC RCS Junction-to-Case Case-to-Sink, Flat, Greased Surface Typ. --- 0.05 Max. 0.20 --- Units C/W www.irf.com 1 2/1/99 FA57SA50LC Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ls Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 500 --- --- 2.0 43 --- --- --- --- --- --- --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 1.0mA --- V/C Reference to 25C, ID = 1mA 0.08 VGS = 10V, ID = 34A 4.0 V V DS = VGS, ID = 250A --- S VDS = 50V, ID = 34A 50 VDS = 500V, VGS = 0V A 500 VDS = 400V, VGS = 0V, TJ = 125C 200 V GS = 20V nA -200 VGS = -20V 338 ID = 57A 77 nC VDS = 400V 147 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 57A ns --- R G =2.0 (Internal) --- RD = 4.3, See Fig. 10 --- nH Between lead, and center of die contact --- 10000 --- VGS = 0V --- 1500 --- pF VDS = 25V --- 50 --- = 1.0MHz, See Fig. 5 Typ. --- 0.62 --- --- --- --- --- --- --- 225 51 98 32 152 108 118 5.0 Source-Drain Ratings and Characteristics IS ISM V SD t rr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions MOSFET symbol 57 --- --- showing the A integral reverse --- --- 228 p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 57A, VGS = 0V --- 901 1351 ns TJ = 25C, IF = 57A --- 15 23 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 57A, di/dt 200A/s, VDD V(BR)DSS, TJ 150C Starting TJ = 25C, L = 446H RG = 25, IAS = 57A. (See Figure 12) Pulse width 300s; duty cycle 2%. 2 www.irf.com FA57SA50LC 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 4.5V 10 4.5V 1 10 0.1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 R DS(on) , Drain-to-Source On Resistance (Normalized) TJ = 150 C ID = 57A I D , Drain-to-Source Current (A) 2.5 100 TJ = 25 C 10 2.0 1.5 1.0 1 0.5 0.1 4 5 6 7 V DS = 50V 20s PULSE WIDTH 8 9 10 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 FA57SA50LC 15000 20 VGS , Gate-to-Source Voltage (V) 12000 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd ID = 57 A 16 VDS = 400V VDS = 250V VDS = 100V C, Capacitance (pF) Ciss 9000 12 6000 8 C oss 3000 4 Crss 0 1 10 100 0 0 60 120 180 FOR TEST CIRCUIT SEE FIGURE 13 240 300 360 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current (A) I D , Drain Current (A) 100 TJ = 150 C 100 10us 10 TJ = 25 C 100us 10 1ms 1 0.1 0.2 V GS = 0 V 0.8 1.4 2.0 2.6 1 1 TC = 25 C TJ = 150 C Single Pulse 10 100 10ms 1000 10000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com FA57SA50LC 60.0 VDS VGS RG RD 50.0 D.U.T. + I D , Drain Current (A) 40.0 -VDD 10V Pulse Width 1 s Duty Factor 0.1 % 30.0 20.0 Fig 10a. Switching Time Test Circuit VDS 90% 10.0 0.0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) 0.1 D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.001 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 FA57SA50LC 1500 EAS , Single Pulse Avalanche Energy (mJ) TOP BOTTOM 1 5V 1200 ID 25A 35A 57A VDS L D R IV E R 900 RG 20V tp D .U .T IA S + V - DD A 600 0 .0 1 Fig 12a. Unclamped Inductive Test Circuit 300 0 25 50 75 100 125 150 V (B R )D SS tp Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com FA57SA50LC Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 FA57SA50LC SOT-227 Package Details 4 .4 0 (.17 3 ) 4 .2 0 (.16 5 ) 4 3 8 .3 0 ( 1.5 08 ) 3 7 .8 0 ( 1.4 88 ) -A 3 6.2 5 ( .24 6 ) 1 2.50 ( .4 92 ) 2 5 .7 0 ( 1.0 12 ) 2 5 .2 0 ( .9 9 2 ) -B 1 7 .50 ( .29 5 ) 3 0 .2 0 ( 1 .1 89 ) 2 9 .8 0 ( 1 .1 73 ) 4X 2 .1 0 ( .0 82 ) 1 .9 0 ( .0 75 ) 8.10 ( .3 19 ) 7.70 ( .3 03 ) 0 .25 ( .01 0 ) M C A M B M 2 .10 ( .08 2 ) 1 .90 ( .07 5 ) -C 0.1 2 ( .00 5 ) 12 .3 0 ( .4 84 ) 11 .8 0 ( .4 64 ) 2 R FULL 1 5.00 ( .5 90 ) 4 1 K1 A2 H E XF R E D G E IG B T A1 K2 3 2 C HAM FER 2 .0 0 ( .0 7 9 ) X 45 7 L E A D A S S IG M E N T S E C 4 1 S G HEXFET S D 3 2 Tube QUANTITY PER TU BE IS 1 0 M4 SREW AND W ASHE R IN CLUDED WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 2/99 8 www.irf.com |
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