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IHW20T120
Soft Switching Series
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
* * * Short circuit withstand time - 10s Designed for : - Soft Switching Applications - Induction Heating Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) Very soft, fast recovery anti-parallel EmConTM HE diode Low EMI Application specific optimisation of inverse diode VCE 1200V IC 20A VCE(sat),Tj=25C 1.7V Tj,max 150C
C
G
E
* * *
Type IHW20T120
Marking H20T120
Package TO-247AC
Ordering Code Q67040-S4652
Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Diode surge non repetitive current, tp limited by Tjmax TC = 25C, tp = 10ms, sine halfwave TC = 25C, tp 2.5s, sine halfwave TC = 100C, tp 2.5s, sine halfwave Gate-emitter voltage Short circuit withstand time
1)
Symbol VCE IC
Value 1200 40 20
Unit V A
ICpuls IF
60 60
23 13 IFpuls IFSM 50 130 120 VGE tSC Ptot Tj Tstg 20 10 178 -40...+150 -55...+150 260 V s W C C 36 A
VGE = 15V, VCC 1200V, Tj 150C Power dissipation, TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2 Apr-04
Power Semiconductors
IHW20T120
Soft Switching Series
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V, I C = 50 0A VCE(sat) V G E = 15V, I C = 20A T j = 25 C T j = 12 5 C T j = 15 0 C Diode forward voltage VF V G E = 0V, I F = 9A T j = 25 C T j = 12 5 C T j = 15 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 30 0A, V C E =V G E V C E = 1200V, V G E = 0V T j = 25 C T j = 15 0 C Gate-emitter leakage current Transconductance IGES gfs V C E = 0V ,V G E = 2 0V V C E = 20V, I C = 20A 13 250 2500 600 nA S 5.0 1.7 1.7 1.7 5.8 2.2 6.5 A 1.7 2.0 2.2 2.2 1200 V Symbol Conditions Value min. typ. max. Unit RthJA TO-247AC 40 RthJCD 1.3 RthJC 0.7 K/W Symbol Conditions Max. Value Unit
Power Semiconductors
2
Rev. 2
Apr-04
IHW20T120
Soft Switching Series
Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current1) IC(SC) V G E = 1 5V,t S C 10s V C C = 600V, T j = 25 C 120 A Ciss Coss Crss QGate LE V C E = 25V, V G E = 0V, f= 1 M Hz V C C = 9 60V, I C = 20A V G E = 1 5V T O -247A C 13 nH 1460 78 65 120 nC pF
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current trr Qrr Irrm T j = 25 C, V R = 8 00V, I F = 9A, di F / dt = 75 0A / s 140 950 13.3 ns nC A td(on) tr td(off) tf Eon Eoff Ets T j = 25 C, V C C = 6 00V, I C = 20A, V G E = - 1 5/ 1 5V, R G = 2 8 , Energy losses include "tail" and diode reverse recovery. 50 30 560 70 1.8 1.5 3.3 mJ ns Symbol Conditions Value min. typ. max. Unit
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 3 Rev. 2 Apr-04
Power Semiconductors
IHW20T120
Soft Switching Series
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current trr Qrr Irrm T j = 15 0 C V R = 8 00V, I F = 1 8A , di F / dt = 75 0A / s 210 1600 16.5 ns nC A td(on) tr td(off) tf Eon Eoff Ets T j = 15 0 C V C C = 6 00V, I C = 20A, V G E = - 1 5/ 1 5V, R G = 28 Energy losses include "tail" and diode reverse recovery. 50 32 660 130 2.6 2.6 5.2 mJ ns Symbol Conditions Value min. typ. max. Unit
Power Semiconductors
4
Rev. 2
Apr-04
IHW20T120
Soft Switching Series
70A 60A
t p =2s
T C =80C
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
50A 40A
10A
10s
T C =110C 30A
50s 1A 200s 500s 2ms DC
Ic
20A 10A 0A 10H z
Ic
100H z
1kH z
10kH z
100kHz
0,1A 1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 28)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. IGBT Safe operating area (D = 0, TC = 25C, Tj 150C;VGE=15V)
180W 160W 140W 120W 100W 80W 60W 40W 20W 0W 25C 50C 75C 100C 125C
40A
IC, COLLECTOR CURRENT
Ptot, DISSIPATED POWER
30A
20A
10A
0A 25C
75C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
Power Semiconductors
5
Rev. 2
Apr-04
IHW20T120
Soft Switching Series
60A
60A
50A V GE =17V
50A
IC, COLLECTOR CURRENT
40A
15V 13V
IC, COLLECTOR CURRENT
V GE =17V 40A 15V 13V 30A 11V 9V 20A 7V
30A
11V 9V
20A
7V
10A
10A
0A 0V 1V 2V 3V 4V 5V 6V
0A 0V 1V 2V 3V 4V 5V 6V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
60A
3,5V 3,0V 2,5V 2,0V 1,5V 1,0V IC =5A 0,5V 0,0V -50C IC =20A IC =40A
50A
IC, COLLECTOR CURRENT
40A
30A
IC =10A
20A T J = 1 5 0 C 10A 2 5 C
0A
0V
2V
4V
6V
8V
10V
12V
0C
50C
100C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
6
Rev. 2
Apr-04
IHW20T120
Soft Switching Series
t d(off) 1000ns
1s td(off)
t, SWITCHING TIMES
t, SWITCHING TIMES
tf
100ns
tf
100ns
td(on)
t d(on)
tr
tr 10ns
0A
10A
20A
10ns
10
35
60
85
110
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150C, VCE=600V, VGE=0/15V, RG=35, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150C, VCE=600V, VGE=0/15V, IC=20A, Dynamic test circuit in Figure E)
td(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
7V 6V 5V 4V min. 3V 2V 1V 0V -50C max. typ.
t, SWITCHING TIMES
100ns
tf
td(on)
tr
10ns
0C
50C
100C
150
0C
50C
100C
150C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=20A, RG=35, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA)
Power Semiconductors
7
Rev. 2
Apr-04
IHW20T120
Soft Switching Series
7 mJ
8,0m J *) E on and E ts include loss es due to diode recovery
*) E on and E ts include losses 6 mJ due to diode recovery E ts*
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
5 mJ 4 mJ 3 mJ E on* 2 mJ 1 mJ 0 mJ
6,0m J
E off
4,0m J
E ts *
E off
2,0m J
E on *
0,0m J 5A
10A
15A
20A
25A
30A
35A
40
5
30
55
80
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150C, VCE=600V, VGE=0/15V, RG=35, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150C, VCE=600V, VGE=0/15V, IC=20A, Dynamic test circuit in Figure E)
5m J
6mJ *) E on a n d E ts in c lu d e lo s s e s 5mJ d u e to d io d e re c o v e ry
*) E on and E ts include losses due to diode recovery 4m J
E, SWITCHING ENERGY LOSSES
4mJ
E, SWITCHING ENERGY LOSSES
3m J E ts * 2m J E off 1m J E on *
3mJ E * ts 2mJ E o ff 1mJ E on *
0mJ
5 0 C
1 0 0 C
1 5 0 C
0m J 400V
500V
600V
700V
800V
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=20A, RG=35, Dynamic test circuit in Figure E)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ=150C, VGE=0/15V, IC=20A, RG=35, Dynamic test circuit in Figure E)
Power Semiconductors
8
Rev. 2
Apr-04
IHW20T120
Soft Switching Series
1nF
C iss
VGE, GATE-EMITTER VOLTAGE
15V
240V 960V
10V
c, CAPACITANCE
100pF
C oss C rss
5V
0V 0nC
50nC
100nC
150nC
10pF
0V
10V
20V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=20 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
200A
IC(sc), short circuit COLLECTOR CURRENT
SHORT CIRCUIT WITHSTAND TIME
15s
175A 150A 125A 100A 75A 50A 25A 0A 12V 14V 16V 18V
10s
5s
tSC,
0s 12V
14V
16V
VGE, GATE-EMITTETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C)
VGE, GATE-EMITTETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE 600V, Tj 150C)
Power Semiconductors
9
Rev. 2
Apr-04
IHW20T120
Soft Switching Series
ZthJC, TRANSIENT THERMAL RESISTANCE
ZthJC, TRANSIENT THERMAL RESISTANCE
10 K/W
0
10 K/W
0
D=0.5
D=0.5
0.2 10 K/W
-1
0.2 0.1 10 K/W
-1
0.1 0.05 0.02 0.01 single pulse
R,(K/W) 0.3841 0.2088 0.1079
R1
, (s) -2 6.54*10 -3 3.12*10 -4 2.26*10
R2
0.05 0.02 0.01 single pulse
R,(K/W) 0.2440 0.4622 0.4972 0.0946
R1
, (s) -2 5.53*10 -3 7.07*10 -4 8.85*10 -5 8.48*10
R2
C1= 1/R1
C2= 2/R2
C1= 1/R1
C2= 2/R2
10 K/W 10s
-2
100s
1ms
10ms
100ms
10s
100s
1ms
10ms
100ms
tP, PULSE WIDTH Figure 23. IGBT transient thermal resistance (D = tp / T)
tP, PULSE WIDTH Figure 24. Typical Diode transient thermal impedance as a function of pulse width (D=tP/T)
Qrr, REVERSE RECOVERY CHARGE
500ns
trr, REVERSE RECOVERY TIME
400ns
2C
TJ=150C
300ns
200ns
TJ=150C TJ=25C
400A/s 600A/s 800A/s
1C
TJ=25C
100ns
0ns 200A/s
0C 200A/s
400A/s
600A/s
800A/s
diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=600V, IF=8A, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR=600V, IF=8A, Dynamic test circuit in Figure E)
Power Semiconductors
10
Rev. 2
Apr-04
IHW20T120
Soft Switching Series
TJ=150C
dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT
REVERSE RECOVERY CURRENT
TJ=25C
-600A/s -500A/s -400A/s -300A/s -200A/s -100A/s -0A/s 200A/s
25A
20A
TJ=25C
TJ=150C
15A
10A
Irr,
5A
0A
200A/s
400A/s
600A/s
800A/s
400A/s
600A/s
800A/s
diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR=600V, IF=8A, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=600V, IF=8A, Dynamic test circuit in Figure E)
TJ=25C 20A 150C
2,0V IF=15A 1,5V 8A 5A 2,5A 1,0V
10A
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
0,5V
0A
0V
1V
2V
0,0V
-50C
0C
50C
100C
VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage
TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature
Power Semiconductors
11
Rev. 2
Apr-04
IHW20T120
Soft Switching Series
TO-247AC
symbol
dimensions
[mm] min max 5.28 2.51 2.29 1.32 2.06 3.18 21.16 16.15 5.72 20.68 4.930 6.22 min 4.78 2.29 1.78 1.09 1.73 2.67 20.80 15.65 5.21 19.81 3.560 3.61 6.12
[inch] max 0.2079 0.0988 0.0902 0.0520 0.0811 0.1252 0.8331 0.6358 0.2252 0.8142 0.1941 0.2449 0.1882 0.0902 0.0701 0.0429 0.0681 0.1051 0.8189 0.6161 0.2051 0.7799 0.1402 0.2409
A B C D E F G H K L M N
P
0.76 max
0.0299 max
0.1421
Q
Power Semiconductors
12
Rev. 2
Apr-04
IHW20T120
Soft Switching Series
i,v diF /dt tr r =tS +tF Qr r =QS +QF tr r IF tS QS tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Power Semiconductors
13
Rev. 2
Apr-04
IHW20T120
Soft Switching Series
Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
14
Rev. 2
Apr-04

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