View MW5IC2030_191998.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MW5IC2030M/D
The Wideband IC Line
RF LDMOS Wideband Integrated Power Amplifiers
The MW5IC2030 wideband integrated circuit is designed for base station applications. It uses Motorola's newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip design makes it usable from 1930 to 1990 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, PHS, CDMA and W - CDMA. Final Application Typical CDMA Performance: VDD = 27 Volts, IDQ1 = 160 mA, IDQ2 = 230 mA, Pout = 5 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Power Gain -- 23 dB Drain Efficiency -- 20% ACPR @ 885 kHz Offset -- - 49 dBc @ 30 kHz Channel Bandwidth Driver Application Typical CDMA Performance: VDD = 27 Volts, IDQ1 = 200 mA, IDQ2 = 550 mA, Pout = 1 Watt Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Power Gain -- 24 dB ACPR @ 885 kHz Offset -- - 64 dBc @ 30 kHz Channel Bandwidth * On - Chip Matching (50 Ohm Input, >4 Ohm Output) * Integrated Temperature Compensation Capability with Enable/Disable Function * On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) * Integrated ESD Protection * Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications * Also Available in Gull Wing for Surface Mount * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
VDS1 VRD2 VRG2 RFin VRD1 VDS2/RFout
MW5IC2030MBR1 MW5IC2030GMBR1
1930 - 1990 MHz, 30 W, 26 V GSM/GSM EDGE, W - CDMA, PHS RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW5IC2030MBR1
CASE 1329A - 03 TO - 272 WB - 16 GULL PLASTIC MW5IC2030GMBR1
PIN CONNECTIONS
GND VDS1 VRD2 VRG2 GND RFin VRD1 VRG1/VGS1 VGS2 NC GND Quiescent Current Temperature Compensation
1 2 3 4 5 6 7 8 9 10 11
16 15
GND NC
14
VDS2/ RFout
VRG1/VGS1 VGS2
13 12
NC GND
(Top View) NOTE: Exposed backside flag is source terminal for transistors.
Functional Block Diagram
(1) Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1987.
REV 2
MOTOROLA RF Motorola, Inc. 2004 DEVICE DATA
MW5IC2030MBR1 MW5IC2030GMBR1 1
MAXIMUM RATINGS
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature Input Power Symbol VDSS VGS Tstg TJ Pin Value 65 - 0.5, +15 - 65 to +175 200 20 Unit Vdc Vdc C C dBm
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case CDMA Application (Pout = 5 W CW) PHS Application (Pout = 12.6 W CW) Stage 1, 27 Vdc, IDQ = 160 mA Stage 2, 27 Vdc, IDQ = 230 mA Stage 1, 26 Vdc, IDQ = 300 mA Stage 2, 26 Vdc, IDQ = 1300 mA Symbol RJC 4.89 1.75 4.85 1.61 Value (1) Unit C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Charge Device Model Class 1B (Minimum) A (Minimum) 3 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology Per JESD 22 - A113 Rating 3
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit CDMA FUNCTIONAL TESTS (In Motorola 1.9 GHz Test Fixture, 50 hm system) VDD = 27 Vdc, IDQ1 = 160 mA, IDQ2 = 230 mA, Pout = 5 W Avg., 1960 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 885 kHz Offset. Peak/Avg. = 9.8 dB @ 0.01 Probability on CCDF. Power Gain Drain Efficiency Input Return Loss Adjacent Channel Power Ratio Stability (0 dBmNo Spurious > - 60 dBc 0.2 0.3 dB
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1955. (continued)
MW5IC2030MBR1 MW5IC2030GMBR1 2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS - (continued) (TC = 25C unless otherwise noted)
Characteristic Pout @ 1 dB Compression Point, CW Deviation from Linear Phase in 30 MHz BW (Characterized from 1930 - 1990 MHz) Delay Part to Part Phase Variation Part to Part Gain Variation (Per Lot or Reel) Reference FET to RF FET Scaling Ratio Delta (Stages 1 and 2) Symbol P1dB Delay G Min -- -- -- -- -- -- Typ 30 1 2.25 10 1.5 10 Max -- -- -- -- -- -- Unit W ns dB % TYPICAL PERFORMANCES (In Motorola Test Fixture) VDD = 26 Vdc, IDQ1 = 160 mA, IDQ2 = 230 mA, Pout = 5 W, f = 1960 MHz
TYPICAL PHS PERFORMANCES (In Motorola Test Fixture, 50 hm system) VDD = 26 Vdc, IDQ1 = 260 mA, IDQ2 = 1100 mA, Pout = 12.6 W, 1.9 GHz, PHS Signal Mask Power Gain Power Added Efficiency Input Return Loss Adjacent Channel Power Ratio (600 kHz Offset in 192 kHz BW) Gps PAE IRL ACPR -- -- -- -- 24 25 - 15 - 72 -- -- -- -- dB % dB dBc
MOTOROLA RF DEVICE DATA
MW5IC2030MBR1 MW5IC2030GMBR1 3
VD1
Z10 + C19 C9 C6 1 16 NC 15 C5 Z8 Z3 6 7 C14 VRG1/VGS1 8 9 C18 Z11 NC 10 NC 11 Quiescent Current Temperature Compensation NC 13 12 Z7 14 C1 C2 C3 Z6 Z4 Z5 Z9 C8 + VD2 C20 RF OUTPUT 2 3
VRD2 C12 VBIAS R2 R3 RF INPUT Z1 C7 VRD1 R6 C13 Z2
4 5
VBIAS1 R1 C11 R4 C15
C4
+
VBIAS2 R2 C10 R5 C16
+
C17
Z1 Z2 Z3 Z4 Z5 Z6
0.465 0.518 0.282 0.221 0.489 0.471
x 0.041 Microstrip x 0.041 Microstrip x 0.235 Microstrip x 0.081 Microstrip x 0.041 Microstrip x 0.025 Microstrip
Z7 Z8 Z9 Z10 Z11 PCB
0.200 x 0.025 Microstrip 0.274 x 0.050 Microstrip 0.615 x 0.050 Microstrip 0.450 x 0.025 Microstrip 0.340 x 0.014 Microstrip Rogers 4350, 0.020, r = 3.5
Figure 1. MW5IC2030MBR1(GMBR1) Test Circuit Schematic
Table 1. MW5IC2030MBR1(GMBR1) Test Circuit Component Designations and Values
Part C1 C2 C3 C4 C5, C6 C7 C8, C9, C10, C11 C12, C13, C14, C15, C16 C17, C18 C19, C20 R1, R3 R2 R4, R5, R6 Description 1.8 pF High Q Chip Capacitor (0603) 1.5 pF High Q Chip Capacitor (0603) 3.9 pF High Q Chip Capacitor (0603) 6.8 pF High Q Chip Capacitor (0805) 100 pF Class 1 NPO Chip Capacitors (0805) 4.7 pF Class 1 NPO Chip Capacitor (0805) 0.1 F X7R Chip Capacitors (1206) 0.01 F Class 2 X7R Chip Capacitors (0805) 22 F, 35 V Electrolytic Capacitors 330 F, 50 V Electrolytic Capacitors 1 kW, 5% Chip Resistors (0805) 499 W, 1% Chip Resistor (0805) 100 kW, 5% Chip Resistors (0805) Part Number 600S1R8AT - 250 - T 600S1R5AT - 250 - T 600S3R9AT - 250 - T 600S6R8AT - 250 - T GRM215CB1H101CZ01D GRM215CB1H4R7CZ01D C1206C104K5RACT C0805C103K5RACT ECE - 1AVKS220 ECA - 1HM331 RK73B2ALTD102J RK73H2ATD4990F RK73B2ALTD104J Manufacturer ATC ATC ATC ATC Murata Murata Kemet Kemet Panasonic Panasonic KOA Speer KOA Speer KOA Speer
MW5IC2030MBR1 MW5IC2030GMBR1 4
MOTOROLA RF DEVICE DATA
RD2 C19 VD1 MW5IC2030M Rev 3 RG2 VD2 C20
R3
C9 C6 C12 R6 C13 C7 CUTOUT AREA
C8
C5
C3 C2 C1
C17 C18 C15 C16 C14 R4 R5 C10
C4
RD1 C11 R1 VG2 VD1 VG1RG1 R2
Figure 2. MW5IC2030MBR1(GMBR1) Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
MW5IC2030MBR1 MW5IC2030GMBR1 5
TYPICAL CHARACTERISTICS
23 Gps 32 31 30 29 21 VDD = 27 Vdc, Pout = 10 W (Avg.) IDQ1 = 160 mA, IDQ2 = 230 mA 100 kHz Tone Spacing D IRL 28 -26 -28 -30 19 18 1880 IMD 1900 1920 1940 1960 1980 2000 2020 f, FREQUENCY (MHz) -32 -34 -36 2040 , DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc)
22 G ps , POWER GAIN (dB)
-16 -17 -18 -19 -20 -21
20
Figure 3. Two - Tone Broadband Performance
24 Gps 23 G ps , POWER GAIN (dB) VDD = 27 Vdc, Pout = 1 W (Avg.) IDQ1 = 160 mA, IDQ2 = 230 mA 100 kHz Tone Spacing IRL D
9 8 7 6 , DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc)
22
5 -46 -47 -48
-16 -17 -18 -19 -20 -21
21
20 19 1880
IMD
-49 -50 -51 2040
1900
1920
1940
1960
1980
2000
2020
f, FREQUENCY (MHz)
Figure 4. Two - Tone Broadband Performance
IMD, INTERMODULATION DISTORTION (dBc)
26 25 G ps , POWER GAIN (dB) 24 23 22 21 20 19 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. VDD = 27 Vdc Center Frequency = 1960 MHz 100 kHz Tone Spacing IDQ1 = 120 mA IDQ2 = 175 mA IDQ1 = 160 mA IDQ2 = 230 mA IDQ1 = 200 mA IDQ2 = 300 mA
-10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 -75 -80 0.1
VDD = 27 Vdc IDQ1 = 160 mA, IDQ2 = 230 mA f = 1960 MHz, 100 kHz Tone Spacing
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
3rd Order 5th Order 7th Order
1
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Intermodulation Distortion Products versus Output Power
MW5IC2030MBR1 MW5IC2030GMBR1 6
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
-15 IMD, INTERMODULATION DISTORTION (dBc) -20 -25 -30 -35 -40 -45 -50 -55 -60 0.1 1 10 100 TWO-TONE SPACING (MHz) 7th Order 3rd Order 5th Order VDD = 27 Vdc, Pout = 30 W (PEP) IDQ1 = 160 mA, IDQ2 = 230 mA Two-Tone Measurements, Center Frequency = 1960 MHz 50 49 Pout , OUTPUT POWER (dBm) 48 47 46 45 44 43 42 41 40 39 15 16 17 18 19 -30_C 25_C 85_C VDD = 27 Vdc IDQ1 = 160 mA, IDQ2 = 230 mA Center Frequency = 1960 MHz 21 22 23 24 25 26 27 Actual Ideal P3dB = 44.91 dBm (31 W) P1dB = 44.69 dBm (29.5 W)
20
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products versus Tone Spacing
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 30 25 20 15 D 10 5 0 29 30 31 32 33 34 35 36 37 38 39 40 41 Pout, OUTPUT POWER (dBm) IM3 ACPR -50 -55 Gps -25 -30 G ps , POWER GAIN (dB) IM3 (dBc), ACPR (dBc) -35 -40 -45 27 26 25 24 23 22 21 20 19 18 17 0
Figure 8. Pulse CW Output Power versus Input Power
50 TC = -30_C 25_C 85_C Gps -30_C 25_C 85_C 45 , DRAIN EFFICIENCY (%) S11 (dB) 40 35 30 25 20 D VDD = 27 Vdc IDQ1 = 160 mA IDQ2 = 230 mA f = 1960 MHz 10 100 15 10 5 0
1
Pout, OUTPUT POWER (WATTS)
Figure 9. 2 - Carrier W - CDMA IM3, Power Gain, and Efficiency versus Output Power
25 24 23 G ps , POWER GAIN (dB) 22 S21 (dB) 21 20 19 18 17 16 15 0 20 VDD = 12 V 24 V 28 V 32 V 20 10 0 40 30
Figure 10. Power Gain and Power Added Efficiency versus Output Power
0 S21 -5 -10 -15 -20 S11 -25 -30 -35 3000
VDD = 27 Vdc IDQ1 = 160 mA, IDQ2 = 230 mA Center Frequency = 1960 MHz Two-Tone Measurement, 100 kHz Spacing 40 60
-10 -20 -30 1000
1500
2000 f, FREQUENCY (MHz)
2500
Pout, OUTPUT POWER (WATTS) PEP
Figure 11. Power Gain versus Output Power
Figure 12. Broadband Frequency Response
MOTOROLA RF DEVICE DATA
MW5IC2030MBR1 MW5IC2030GMBR1 7
TYPICAL CHARACTERISTICS
EVM, ERROR VECTOR MAGNITUDE (% rms) 27 26 G ps , POWER GAIN (dB) 25 24 23 85_C 22 21 20 1920 VDD = 27 Vdc, Pout = 5 W (CW) IDQ1 = 160 mA, IDQ2 = 230 mA Two-Tone Measurements, Center Frequency = 1960 MHz 1930 1940 1950 1960 1970 1980 1990 2000 25_C TC = -30_C 8 VDD = 27 Vdc IDQ1 = 160 mA IDQ2 = 230 mA f = 1960 MHz D 85_C 30 25_C 4 TC = -30_C 2 Source EVM = 0.60% 1 10 Pout, OUTPUT POWER (WATTS) 100 10 20 , DRAIN EFFICIENCY (%) 40
6
0
0
f, FREQUENCY (MHz)
Figure 13. Power Gain versus Frequency
SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc) -45 -50 -55 -60 -65 SR @ 400 kHz -70 25_C -75 -80 -85 0 10 Pout, OUTPUT POWER (WATTS) 100 SR @ 600 kHz -30_C 85_C VDD = 27 Vdc IDQ1 = 160 mA IDQ2 = 230 mA EDGE Modulation f = 1960 MHz TC = -30_C ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT 1 & 2, ALTERNATE 1 & 2 CHANNEL POWER RATIO (dBc)
Figure 14. EVM and Drain Efficiency versus Output Power
-40 -45 -50 -55 -60 ACPR -65 -70 -75 ALT2 VDD = 27 Vdc IDQ1 = 160 mA, IDQ2 = 230 mA f = 1960 MHz, 9-Channel IS-95 CDMA
85_C 25_C
ALT1 -80 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Pout, IS-95 OUTPUT POWER (dBm)
Figure 15. Spectral Regrowth at 400 kHz and 600 kHz versus Output Power
-10 MTTF FACTOR (HOURS X AMPS2)
Figure 16. IS - 95 Spectral Regrowth versus Output Power
1.E+09
-20 INSERTION PHASE ( ) _
1.E+08
2nd Stage
-30 TC = -30_C 25_C -40 85_C -50
1.E+07 1st Stage
-60 0 1 10 100 Pout, OUTPUT POWER (WATTS) CW
1.E+06 90
100
110
120
130
140
150
160
170
180 190
TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 17. Insertion Phase versus Output Power
Figure 18. MTTF Factor versus Junction Temperature
MW5IC2030MBR1 MW5IC2030GMBR1 8
MOTOROLA RF DEVICE DATA
Zload*
f = 1800 MHz
f = 1800 MHz f = 2200 MHz f = 2200 MHz Zin Zo = 50
VDD = 27 V, IDQ1 = 160 mA, IDQ2 = 230 mA f MHz 1800 1850 1930 1960 1990 2050 2100 2150 2200 Zin Zin 49.7 - j9.3 47.7 - j9.8 44.8 - j8.5 44.0 - j7.3 44.6 - j5.6 45.7 - j8.6 42.5 - j8.3 40.6 - j6.8 39.3 - j5.0 Zload 6.9 - j0.3 6.9 - j0.3 6.7 - j0.1 6.6 - j0.0 6.6 + j0.1 6.4 + j0.4 6.2 + j0.8 6.1 + j1.1 6.0 + j1.6
= Device input impedance as measured from gate to ground.
Zload = Test circuit impedance as measured from drain to ground.
Device Under Test
Output Matching Network
Z
in
Z
load
Figure 19. Series Equivalent Input and Load Impedance MOTOROLA RF DEVICE DATA MW5IC2030MBR1 MW5IC2030GMBR1 9
PACKAGE DIMENSIONS
2X
B
PIN ONE INDEX
E1
aaa
M
r1 CA B
A
NOTE 6
4X
aaa
M
e1 e2 D1 e b2 CA
10X 4X
6X
e3 b3 aaa M C A DM
2X
aaa
M
b aaa
M
CA
E
DATUM PLANE
H A
c1
C
SEATING PLANE
F Y
ZONE "J"
E2
Y
A1 7 A2
DIM A A1 A2 D D1 E E1 E2 F M N b b1 b2 b3 c1 e e1 e2 e3 r1 aaa INCHES MIN MAX .100 .104 .038 .044 .040 .042 .928 .932 .810 BSC .551 .559 .353 .357 .346 .350 .025 BSC .600 --- .270 --- .011 .017 .037 .043 .037 .043 .225 .231 .007 .011 .054 BSC .040 BSC .224 BSC .150 BSC .063 .068 .004 MILLIMETERS MIN MAX 2.54 2.64 0.96 1.12 1.02 1.07 23.57 23.67 20.57 BSC 14.00 14.20 8.97 9.07 8.79 8.89 0.64 BSC 15.24 --- 6.86 --- 0.28 0.43 0.94 1.09 0.94 1.09 5.72 5.87 .18 .28 1.37 BSC 1.02 BSC 5.69 BSC 3.81 BSC 1.6 1.73 .10
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 (0.13) TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3" DIMENSIONS AT MAXIMUM MATERIAL CONDITION. 6. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. 7. DIM A2 APPLIES WITHIN ZONE "J" ONLY.
CASE 1329 - 09 ISSUE J TO - 272 WB - 16 PLASTIC MW5IC2030MBR1
MW5IC2030MBR1 MW5IC2030GMBR1 10
MOTOROLA RF DEVICE DATA
CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC
N VIEW Y - Y
b1 CA
r1 aaa M C A B
2X PIN ONE INDEX
E1
B
A
4X
aaa
M
b1 CA
NOTE 6
e1 e2 D1 e b2 CA
10X 4X
6X
e3
2X
b3 aaa M C A
D
M
aaa
M
aaa
M
b CA
E
DETAIL Y DATUM PLANE
H A c1 E2 Y Y C
SEATING PLANE
A2
INCHES MIN MAX .100 .104 .001 .004 .099 .110 .928 .932 .810 BSC .429 .437 .353 .357 .346 .350 .018 .024 .01 BSC .600 --- .270 --- .011 .017 .037 .043 .037 .043 .225 .231 .007 .011 .054 BSC .040 BSC .224 BSC .150 BSC .063 .068 2 8 .004 MILLIMETERS MIN MAX 2.54 2.64 0.02 0.10 2.51 2.79 23.57 23.67 20.57 BSC 10.90 11.10 8.97 9.07 8.79 8.89 4.90 5.06 0.25 BSC 15.24 --- 6.86 --- 0.28 0.43 0.94 1.09 0.94 1.09 5.72 5.87 .18 .28 1.37 BSC 1.02 BSC 5.69 BSC 3.81 BSC 1.6 1.73 2 8 .10
L1
GAGE PLANE
t
L DETAIL Y
A1
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 (0.13) TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3" DIMENSIONS AT MAXIMUM MATERIAL CONDITION. 6. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SINK.
CASE 1329A - 03 ISSUE B TO - 272 WB - 16 GULL PLASTIC MW5IC2030GMBR1
MOTOROLA RF DEVICE DATA
MW5IC2030MBR1 MW5IC2030GMBR1 11
EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE
N E2 VIEW Y - Y
DIM A A1 A2 D D1 E E1 E2 L L1 M N b b1 b2 b3 c1 e e1 e2 e3 r1 t aaa
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors
MW5IC2030MBR1 MW5IC2030GMBR1 12
MOTOROLA RF DEVICE DATA
MW5IC2030M/D

▲Up To Search▲

Price & Availability of MW5IC2030

	To Download MW5IC2030 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .