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SGH80N60UFD
IGBT
SGH80N60UFD
Ultrafast IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
Features
* * * * High speed switching Low saturation voltage : VCE(sat) = 2.1 V @ IC = 40A High input impedance CO-PAK, IGBT with FRD : trr = 50ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
TO-3P
GCE
E
TC = 25C unless otherwise noted
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes,/8" from Case for 5 Seconds
@ TC = 25C @ TC = 100C @ TC = 100C @ TC = 25C @ TC = 100C
SGH80N60UFD 600 20 80 40 220 25 280 195 78 -55 to +150 -55 to +150 300
Units V V A A A A A W W C C C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 0.64 0.83 40 Units C/W C/W C/W
(c)2002 Fairchild Semiconductor Corporation
SGH80N60UFD Rev. B1
SGH80N60UFD
Electrical Characteristics of the IGBT T
Symbol Parameter
C
= 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 100 V V/C uA nA
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 40mA, VCE = VGE IC = 40A, VGE = 15V IC = 80A, VGE = 15V 3.5 --4.5 2.1 2.6 6.5 2.6 -V V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---2790 350 100 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance ------------------23 50 90 50 570 590 1160 30 55 150 160 630 940 1580 175 25 60 14 --130 150 --1500 --200 250 --2000 250 40 90 -ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC nH
VCC = 300 V, IC = 40A, RG = 5, VGE = 15V, Inductive Load, TC = 25C
VCC = 300 V, IC = 40A, RG = 5, VGE = 15V, Inductive Load, TC = 125C
VCE = 300 V, IC = 40A, VGE = 15V Measured 5mm from PKG
Electrical Characteristics of DIODE T
Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge
C
= 25C unless otherwise noted
Test Conditions TC = 25C IF = 25A TC = 100C TC = 25C TC = 100C IF = 25A, di/dt = 200A/us TC = 25C TC = 100C TC = 25C TC = 100C
Min. ---------
Typ. 1.4 1.3 50 105 4.5 8.5 112 420
Max. 1.7 -95 -10 -375 --
Units V ns A nC
(c)2002 Fairchild Semiconductor Corporation
SGH80N60UFD Rev. B1
SGH80N60UFD
250 Common Emitter T C = 25 200 20V 15V 12V
120 Common Emitter VGE = 15V TC = 25 TC = 125
100
Collector Current, I C [A]
Collector Current, IC [A]
8
80
150
VGE = 10V
60
100
40
50
20
0 0 2 4 6
0 0.5 1 10
Collector - Emitter Voltage, V CE [V]
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
4
60 Common Emitter VGE = 15V
V CC = 300V Load Current : peak of square wave
Collector - Emitter Voltage, VCE [V]
50 80A
3
Load Current [A]
40
2
40A
30
IC = 20A 1
20
10
0 0 30 60 90 120 150
0
Duty cycle : 50% TC = 100 Power Dissipation = 60W 0.1 1 10 100 1000
Case Temperature, T C []
Frequency [Khz]
Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20 Common Emitter T C = 25
20 Common Emitter T C = 125
Collector - Emitter Voltage, VCE [V]
16
Collector - Emitter Voltage, VCE [V]
16
12
12
8
8
4 40A IC = 20A 0 0 4 8
80A
80A 4 IC = 20A 0 0 4 8 12 16 20 40A
12
16
20
Gate - Emitter Voltage, VGE [V]
Gate - Emitter Voltage, V GE [V]
Fig 5. Saturation Voltage vs. VGE
(c)2002 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. VGE
SGH80N60UFD Rev. B1
SGH80N60UFD
4500 4000 3500 Common Emitter V GE = 0V, f = 1MHz T C = 25 Cies
500 Common Emitter V CC = 300V, VGE = 15V IC = 40A T C = 25 T C = 125
Ton
Capacitance [pF]
2500 2000 1500 Coes 1000 500 0 1 10 30 Cres
Switching Time [ns]
3000
Tr 100
20 1 10 70
Collector - Emitter Voltage, V CE [V]
Gate Resistance, R G [ ]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs. Gate Resistance
2000 Common Emitter VCC = 300V, VGE = 15V IC = 40A TC = 25 TC = 125
5000 Common Emitter V CC = 300V, V GE = 15V IC = 40A T C = 25 T C = 125
1000
Toff
Switching Time [ns]
Switching Loss [uJ]
Eoff Eon
1000
Tf
Eoff
100 Tf
20 1 10 80
100 1 10 80
Gate Resistance, R G [ ]
Gate Resistance, R G [ ]
Fig 9. Turn-Off Characteristics vs. Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
500 Common Emitter VCC = 300V, V GE = 15V RG = 5 TC = 25 TC = 125 100
2000 Common Emitter V CC = 300V, V GE = 15V RG = 5 T C = 25 T C = 125 Toff Tf Toff 100 Tf Tr
1000
Switching Time [ns]
Ton
10 10 20 30 40 50 60 70 80
Switching Time [ns]
20 10 20 30 40 50 60 70 80
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs. Collector Current
(c)2002 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs. Collector Current
SGH80N60UFD Rev. B1
SGH80N60UFD
3000
15 Common Emitter RL = 7.5 TC = 25
Gate - Emitter Voltage, VGE [ V ]
1000
12
Switching Loss [uJ]
9 300 V 6 V CC = 100 V 3 200 V
100
Eoff Common Emitter V CC = 300V, V GE = 15V RG = 5 T C = 25 T C = 125 10 20 30 40 50 60 70 80
Eon
10 0
0 0 30 60 90 120 150 180
Collector Current, IC [A]
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
500 IC MAX. (Pulsed) 100
500
Collector Current, IC [A]
100us 1 10 DC Operation Single Nonrepetitive Pulse TC = 25 Curves must be derated linearly with increase in temperature 0.3 1 10 100 1000
Collector Current, I C [A]
IC MAX. (Continuous)
50us
100
10
1
Safe Operating Area V GE =20V, TC=100 C 1 1 10 100 1000
o
0.1
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, V CE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
1 0.5
Thermal Response, Zthjc [/W]
0.2 0.1 0.1 0.05 0.02 0.01 0.01
Pdm
single pulse
t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC
1E-3 10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
(c)2002 Fairchild Semiconductor Corporation SGH80N60UFD Rev. B1
SGH80N60UFD
100 100 TC = 25 TC = 100
Reverse Recovery Current, Irr [A]
Forward Current, I F [A]
V R = 200V IF = 25A T C = 25 T C = 100
10
10
1 0 1 2 3
1 100
1000
Forward Voltage Drop, VF [V]
di/dt [A/us]
Fig 18. Forward Characteristics
Fig 19. Reverse Recovery Current
1000
120 V R = 200V IF = 25A T C = 25 T C = 100 VR = 200V IF = 25A TC = 25 TC = 100
Stored Recovery Charge, Qrr [nC]
600
Reverce Recovery Time, t rr [ns]
1000
800
100
80
400
60
200
40
0 100
20 100 1000
di/dt [A/us]
di/dt [A/us]
Fig 20. Stored Charge
Fig 21. Reverse Recovery Time
(c)2002 Fairchild Semiconductor Corporation
SGH80N60UFD Rev. B1
SGH80N60UFD
Package Dimension
TO-3P
15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05
+0.15
12.76 0.20
19.90 0.20
16.50 0.30
3.00 0.20 1.00 0.20
3.50 0.20
2.00 0.20
13.90 0.20
23.40 0.20
18.70 0.20
1.40 0.20
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.60 -0.05
+0.15
Dimensions in Millimeters
(c)2002 Fairchild Semiconductor Corporation SGH80N60UFD Rev. B1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I1

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