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 TDA2008
12W AUDIO AMPLIFIER (Vs = 22V, RL = 4)
DESCRIPTION The TDA2008 is a mololithic class B audio power amplifier in Pentawatt(R) package designed for driving low impedence loads (down to 3.2). The divice provides a high output current capability(up to 3A), very low harmonic and crossover distortion. In addition,the device offers the following features: - very low number of external components; - assembly ease, due to Pentawatt(R) power package with no electrical insulations requirements; - space and cost saving; - high reliability; - flexibility in use; - thermal protection.
Pentawatt
ORDERING NUMBER : TDA 2008V
TYPICAL APPLICATION CIRCUIT
March 1993
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TDA2008
PIN CONNECTION (top view)
ABSOLUTE MAXIMUM RATINGS
Symbol Vs Io Io Ptot Tstg, Tj DC supply voltage Output peak current (repetitive) Output peak current ( non repetitive) Power dissipation at Tcase = 90C Storage and junction temperature Parameter Value 28 3 4 20 - 40 to 150 Unit V A A W C
SCHEMATIC DIAGRAM
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TDA2008
DC TEST CIRCUIT
AC TEST CIRCUIT
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TDA2008
THERMAL DATA
Symbol Rth-j-case Parameter Thermal resistance junction-case max Value 3 Unit C/W
ELECTRICAL CHARACTERISTICS ( Refer to the test circuit, Vs = 18V, Tamb = 25 C unless otherwise specified)
Symbol Vs Vo Id Po Parameter Supply voltage Quiescent output voltage (pin 4) Quiescent drain current (pin 5) Output power d = 10% f = 1 KHz Vi(RMS) Vi Input saturation voltage Input sensitivity f = 1 KHz Po = 0.5W Po = 8W Po = 0.5W Po = 12W Po = 1W RL = 4 f = 1 KHz Po = 0.05 to 4W Po = 0.05 to 6W f = 1 KHz f = 1 KHz RL = 8 39.5 BW = 22Hz to 22 KHz RL = 8 RL = 4 70 RL RL RL RL = 8 = 8 = 4 = 4 RL = 8 RL = 4 10 300 20 80 14 70 40 to 15,000 Test conditions Min. 10 10.5 65 8 12 115 Typ. Max. 28 Unit V V mA W W mV mV mV mV mV Hz
B d
Frequency response (-3 dB) Distortion
0.12 0.12 150 80 40 1 60
1 1
% % K dB
Ri Gv Gv eN iN SVR
Input resistance (pin 1) Voltage gain (open loop) Voltage gain (closed loop) Input noise voltage Input noise current Supply voltage rejection
40.5 5 200
dB V pA dB
Vripple = 0.5 Rg = 10K RL = 4
f = 100 Hz
30
36
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TDA2008
APPLICATION INFORMATION Figure 1. Typical application circuit Figure 2. P.C. board and component layout for the circuit of fig. 1 (1:1 scale)
Figure 3. 25W bridge configuration applica- tion Figure 4. P.C. board and component layout for the circuit () circuit of fig. 3 (1:1 scale)
() The value of the capacitorr C3 and C4 are different to optimize the SVR (Typ. = 40 dB)
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TDA2008
Figure 5. Quiescent current vs. supply voltage Figure 6. Output voltage vs. supply voltage Figure 7. Output power vs. supply voltage
Fi gur e 8 . Di stor ti on vs. frequency
Figure 9. Supply voltage rejection vs. frequency
Figure 10. Maximum al- lowable power dissipation vs. ambient temperature
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TDA2008
PRACTICAL CONSIDERATIONS Printed circuit board The layout shown in Fig. 2 is recommended. If different layouts are used, the ground points of input 1 and input 2 must be well decoupled from the ground of the output through which a rather high current flows. Assembly suggestion No electrical insulation is needed between the
package and the heat-sink. Pin length should be as short as possible. The soldering temperature must not exceed 260C for 12 seconds. Application suggestions The recommended component values are those shown in the application circuits of Fig. 1. Different values can be used. The following table is intended to aid the car-radio designer.
Component C1 C2 C3 C4 C5
Recommended value 2.2F 470F 0.1F 1000F 0.1F
Purpose Input DC decoupling Ripple rejection. Supply by passing. Output coupling. Frequency stability.
Larger than recommended value
Smaller than recommended value Noise at switch-on, switch-off Degradation of SVR. Danger of oscillation. Higher low frequency cutoff. Danger of oscillation at high frequencies with inductive loads. Increase of drain current.
R1 R2 R3
(Gv - 1) * R2 2.2 1
Setting of gain. (*) Setting of gain and SVR. Frequency stability. Degradation of SVR. Danger of oscillation at high frequencies with inductive loads.
(*) The closed loop gain must be higher than 26dB.
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TDA2008
PENTAWATT PACKAGE MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 G G1 H2 H3 L L1 L2 L3 L5 L6 L7 M M1 Dia 3.65 2.6 15.1 6 4.5 4 3.85 0.144 10.05 17.85 15.75 21.4 22.5 3 15.8 6.6 0.102 0.594 0.236 0.177 0.157 0.152 2.4 1.2 0.35 0.8 1 3.4 6.8 10.4 10.4 0.396 0.703 0.620 0.843 0.886 0.118 0.622 0.260 mm TYP. MAX. 4.8 1.37 2.8 1.35 0.55 1.05 1.4 0.094 0.047 0.014 0.031 0.039 0.126 0.260 0.134 0.268 MIN. inch TYP. MAX. 0.189 0.054 0.110 0.053 0.022 0.041 0.055 0.142 0.276 0.409 0.409
L E L1 M1 A C D1 L2 L5 L3 D Dia. F L6
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H2
L7
F1
G
G1
H3
M
TDA2008
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A.
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