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| BUZ 341 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 341 VDS 200 V ID 33 A RDS(on) 0.07 Package TO-218 AA Ordering Code C67078-S3128-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 33 Unit A ID IDpuls 132 TC = 28 C Pulsed drain current TC = 25 C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 33 16 mJ ID = 33 A, VDD = 50 V, RGS = 25 L = 1.09 mH, Tj = 25 C Gate source voltage Power dissipation 790 VGS Ptot 20 170 V W TC = 25 C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 0.74 75 E 55 / 150 / 56 C K/W 1 07/96 BUZ 341 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 200 3 0.1 10 10 0.06 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 A VDS = 200 V, VGS = 0 V, Tj = 25 C VDS = 200 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS 100 nA 0.07 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 21 A Semiconductor Group 2 07/96 BUZ 341 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 15 23 2600 500 230 - S pF 3900 750 350 ns 40 60 VDS 2 * ID * RDS(on)max, ID = 21 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Rise time tr 110 170 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Turn-off delay time td(off) 450 680 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Fall time tf 160 240 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Semiconductor Group 3 07/96 BUZ 341 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed A 1.3 230 1.8 33 132 V 1.6 ns C Values typ. max. Unit ISM VSD trr Qrr TC = 25 C Inverse diode forward voltage VGS = 0 V, IF = 66 A Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 07/96 BUZ 341 Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 10 V 34 A 180 W Ptot 140 120 ID 28 24 20 100 16 80 12 60 40 20 0 0 8 4 0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 10 3 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 A ID 10 2 t = 350.0ns p 1 s K/W /ID = ZthJC 10 -1 10 s 100 s VD S R 10 1 n) (o DS 1 ms 10 ms D = 0.50 0.20 10 -2 0.10 0.05 10 0 DC single pulse 0.02 0.01 10 -1 0 10 10 1 10 2 V 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 341 Typ. output characteristics ID = (VDS) parameter: tp = 80 s 75 A 65 Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 0.22 Ptot = 170W l kj ih g VGS [V] f a 4.0 b 4.5 c 5.0 a b c d ID 60 55 50 45 40 35 e 0.18 RDS (on) 0.16 0.14 0.12 0.10 0.08 0.06 0.04 j e f g i h d 5.5 e 6.0 f 6.5 g 7.0 d h 7.5 i j 8.0 9.0 30 25 20 15 10 5 0 0 a b c k 10.0 l 20.0 VGS [V] = 0.02 11 0.00 0 a 4.5 4.0 5.0 b 5.5 c 6.0 d 6.5 e f 7.0 7.5 g 8.0 h i j 9.0 10.0 20.0 2 4 6 8 V 10 20 30 40 50 A 65 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max 65 A 55 parameter: tp = 80 s, VDS2 x ID x RDS(on)max 30 S 26 ID 50 45 gfs 24 22 20 40 35 30 25 20 15 18 16 14 12 10 8 6 10 5 0 0 1 2 3 4 5 6 7 8 V VGS 10 4 2 0 0 10 20 30 40 A ID 60 Semiconductor Group 6 07/96 BUZ 341 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 21 A, VGS = 10 V 0.26 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 0.22 98% RDS (on) 0.20 0.18 0.16 0.14 0.12 0.10 0.08 VGS(th) 3.6 3.2 2.8 2.4 2.0 typ 2% 98% typ 1.6 1.2 0.06 0.04 0.02 0.00 -60 -20 20 60 100 C 160 0.8 0.4 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 3 nF C 10 0 A Ciss IF 10 2 Coss Crss 10 -1 10 1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 10 0 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 341 Avalanche energy EAS = (Tj ) parameter: ID = 33 A, VDD = 50 V RGS = 25 , L = 1.09 mH 800 Typ. gate charge VGS = (QGate) parameter: ID puls = 50 A 16 mJ V EAS 600 VGS 12 500 10 0,2 VDS max 0,8 VDS max 400 8 300 6 200 4 100 0 20 2 0 40 60 80 100 120 C 160 0 20 40 60 80 100 120 140 nC 180 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 07/96 BUZ 341 Package Outlines TO-218 AA Dimension in mm Semiconductor Group 9 07/96 |
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