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| PD - 93940 IRF7701 HEXFET(R) Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.1mm) Available in Tape & Reel VDSS -12V RDS(on) max 0.011@VGS = -4.5V 0.015@VGS = -2.5V 0.022@VGS = -1.8V ID -10A -8.5A -7.0A Description HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner 1 2 3 4 1= 2= 3= 4= D S S G D 8 7 G 6 S 8= 7= 6= 5= D S S D 5 with an extremely efficient and reliable device for use in battery and load management. The TSSOP-8 package, has 45% less footprint area of the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the TSSOP-8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. TSSOP-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -12 10 8.0 80 1.5 0.96 12 8.0 -55 to + 150 Units V A W mW/C V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 83 Units C/W www.irf.com 1 6/21/00 IRF7701 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -12 --- --- --- --- -0.45 21 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V V GS = 0V, ID = -250A -0.006 --- V/C Reference to 25C, ID = -1mA --- 0.011 VGS = -4.5V, ID = -10A --- 0.015 VGS = -2.5V, ID = -8.5A --- 0.022 VGS = -1.8V, ID = -7.0A --- -1.2 V VDS = VGS, ID = -250A --- --- S VDS = -10V, I D = -10A --- 1.0 VDS = -12V, VGS = 0V A --- -25 VDS = -9.6V, VGS = 0V, TJ = 70C --- -100 VGS = -8.0V nA --- 100 VGS = 8.0V 69 100 ID = -8.0A 9.1 14 nC VDS = -9.6V 21 32 VGS = -4.5V 19 --- VDD = -6.0V ns 20 --- ID = -1.0A 240 --- RD = 6.0 220 --- VGS = -4.5V 5050 --- VGS = 0V 1520 --- pF VDS = -10V 1120 --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 52 53 -1.5 A -80 -1.2 78 80 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.5A, VGS = 0V TJ = 25C, IF = -1.5A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. When mounted on 1 inch square copper board, t<10 sec Pulse width 300s; duty cycle 2%. 2 www.irf.com IRF7701 100 VGS -7.00V -4.5V -3.0V -2.5V -1.8V -1.5V -1.2V BOTTOM -1.0V TOP 100 -I D , Drain-to-Source Current (A) 10 -I D , Drain-to-Source Current (A) VGS -7.00V -4.5V -3.0V -2.5V -1.8V -1.5V -1.2V BOTTOM -1.0V TOP 10 1 -1.0V 1 0.1 -1.0V 0.01 0.1 20s PULSE WIDTH TJ = 25 C 1 10 0.1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 -I D , Drain-to-Source Current (A) TJ = 150 C R DS(on) , Drain-to-Source On Resistance (Normalized) TJ = 25 C ID = -10A 1.5 10 1.0 1 0.5 0.1 1.0 V DS = -10V 20s PULSE WIDTH 1.5 2.0 2.5 3.0 -VGS , Gate-to-Source Voltage (V) 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7701 8000 VGS = 0V, f = 1 MHZ Ciss = C + C , C gs gd ds SHORTED Crss = C gd Coss = C + C ds gd 10 ID = -10A VDS = -9.6V -VGS , Gate-to-Source Voltage (V) 8 6000 C, Capacitance(pF) Ciss 6 4000 4 Coss 2000 Crss 2 0 1 10 100 0 0 20 40 FOR TEST CIRCUIT SEE FIGURE 13 60 80 100 -V DS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) TJ = 150 C 10 -ID , Drain Current (A) I 100 100us TJ = 25 C 1 1ms 10 10ms 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 1 0.1 TA = 25 C TJ = 150 C Single Pulse 1 10 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7701 10.0 VDS 8.0 RD VGS RG D.U.T. + -ID , Drain Current (A) 6.0 VGS 4.0 Pulse Width 1 s Duty Factor 0.1 % 2.0 Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf 0.0 25 50 75 100 125 150 VGS 10% TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 90% VDS Fig 10b. Switching Time Waveforms 100 D = 0.50 Thermal Response (Z thJA ) 0.20 10 0.10 0.05 0.02 1 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 0.1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com - VDD 5 IRF7701 R DS(on) , Drain-to -Source On Resistance ( ) R DS (on) , Drain-to-Source On Resistance ( ) 0.05 0.020 0.04 0.015 VGS = -2.5V 0.03 0.02 ID = -10A 0.010 VGS = -4.5V 0.01 0.00 1.5 2.5 3.5 4.5 0.005 0 20 40 60 80 100 -I D , Drain Current (A) -V GS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Fig 12. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG QGS VG QGD 12V .2F .3F VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com + D.U.T. - VDS IRF7701 0.80 40 -V GS(th) , Variace ( V ) 0.60 30 0.40 Power (W) 150 ID = -250A 20 0.20 10 0.00 -75 -50 -25 0 25 50 75 100 125 0 0.01 0.10 1.00 10.00 100.00 T J , Temperature ( C ) Time (sec) Fig 14. Threshold Voltage Vs. Temperature Fig 15. Typical Power Vs. Time www.irf.com 7 IRF7701 TSSOP-8 Part Marking Information EXAMPLE: T HIS IS AN IRF7702 LOT CODE (XX) PART NUMBER DAT E CODE (YW) XXYW 7702 T ABLE 1 WORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ET C.) YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D DAT E CODE EXAMPLES : 9503 = 5C 9532 = EF 24 25 26 X Y Z T ABLE 2 WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ETC.) YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D 50 51 52 X Y Z TSSOP-8 Tape and Reel 8LT SSOP (MO-153AA) 16 mm O 13" 16mm 8 mm FEED DIRECT ION NOT ES: 1. T APE & REEL OUT LINE CONFORMS T O EIA-481 & EIA-541. 8 www.irf.com IRF7701 TSSOP-8 Package Outline IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 6/00 www.irf.com 9 |
Price & Availability of IRF7701
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