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 CoolMOS Power MOSFET
IXKN 75N60C
N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET
VDSS 600 V
ID25 75 A
RDS(on) 35 m
Preliminary
MOSFET Symbol VDSS VGS ID25 ID90 dv/dt EAS EAR TC = 25C TC = 90C VDS < VDSS; IF 100A;diF/dt 200A/s TVJ = 150C ID = 10 A; L = 36 mH; TC = 25C ID = 20 A; L = 5 H; TC = 25C Conditions TVJ = 25C to 150C Maximum Ratings
miniBLOC, SOT-227 B E72873
S
600 20 75 50 6 1.8 1
V V A A V/ns
G
S D G = Gate S = Source D = Drain
J mJ
Either source terminal at miniBLOC can be used as main or kelvin source
Symbol
Conditions
Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 30 3.5 0.1 35 m 5.5 V
Features
RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF RthJC
VGS = 10 V; ID = ID90 VDS = 20 V; ID = 5 mA; VDS = VDSS; VGS = 0 V; TVJ = 25C TVJ = 125C VGS = 20 V; VDS = 0 V VGS= 10 V; VDS = 350 V; ID = 100 A
0.05 mA mA
miniBLOC package - Electrically isolated copper base - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation due to AlN ceramic substrate - International standard package SOT-227 - Easy screw assembly fast CoolMOS power MOSFET - 2nd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness Enhanced total power density
200 nA 440 112 246 30 95 100 10 0.9 1.1 nC nC nC ns ns ns ns V
VGS= 10 V; VDS = 380 V; ID = 50 A; RG = 1 (reverse conduction) IF = 37.5 A; VGS = 0 V
Applications

0.22 K/W

Switched mode power supplies (SMPS) Uninterruptible power supplies (UPS) Power factor correction (PFC) Welding Inductive heating
CoolMOS is a trademark of Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
(c) 2001 IXYS All rights reserved
1-3
130
IXKN 75N60C
Component Symbol VISOL TVJ Tstg Md mounting torque terminal connection torque (M4) Conditions with heatsink compound Conditions IISOL 1 mA; 50/60 Hz Maximum Ratings 2500 -40...+150 -40...+125 1.5 1.5 V~ C C Nm Nm miniBLOC, SOT-227 B
Symbol RthCH Weight
Characteristic Values min. typ. max. 0.1 30 K/W g
Dim. A B C D E F G H J K L M N O P Q R S T U V W Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 3.30 0.780 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.20 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 4.57 0.830 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.489 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 0.130 19.81 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 0.180 21.08
M4 screws (4x) supplied
(c) 2001 IXYS All rights reserved
2-3
IXKN 75N60C
250
A VGS = 18 - 12 V
0.16
10 V VGS = 8 V
200
ID
TVJ = 25C
0.12
RDSon 8V
TVJ = 25C
150 100 50 0 0 4 8 12
VDS
0.08
10 V
0.04
12-18 V
0.00 16
V 20
0
50
100
150
ID
200 A 250
Fig. 1: typ. Output Characteristics
Fig. 2: typ. RDSon vs. Drain Current
0.10
250
A ID 200
ID = 50 A TVJ = 25C
0.08
RDSon
0.06 0.04 0.02 0.00 -40 0
150 100 50 0
TVJ = 125C
40
80
TVJ
120 C 160
0
2
4
6
8
VGS
10 V 12
Fig. 3: typ. RDSon vs. Junction Temperature
Fig. 4: typ. Input Admittance
16
V 14 VGS
1 K/W 0.1 ZthJC 0.01
single pulse
12 10 8 6 4 2 0 0 100 200 300 400 500
QG nC 600
0.001
700
0.0001 0.00001 0.0001 0.001
IXKN75N60C
0.01
0.1 t
1
s 10
Fig. 5: typ. Gate Charge Characteristic Curve
Fig. 6: typ. Transient Thermal Impedance
(c) 2001 IXYS All rights reserved
3-3


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