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| CoolMOS Power MOSFET IXKN 75N60C N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS 600 V ID25 75 A RDS(on) 35 m Preliminary MOSFET Symbol VDSS VGS ID25 ID90 dv/dt EAS EAR TC = 25C TC = 90C VDS < VDSS; IF 100A;diF/dt 200A/s TVJ = 150C ID = 10 A; L = 36 mH; TC = 25C ID = 20 A; L = 5 H; TC = 25C Conditions TVJ = 25C to 150C Maximum Ratings miniBLOC, SOT-227 B E72873 S 600 20 75 50 6 1.8 1 V V A A V/ns G S D G = Gate S = Source D = Drain J mJ Either source terminal at miniBLOC can be used as main or kelvin source Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 30 3.5 0.1 35 m 5.5 V Features RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF RthJC VGS = 10 V; ID = ID90 VDS = 20 V; ID = 5 mA; VDS = VDSS; VGS = 0 V; TVJ = 25C TVJ = 125C VGS = 20 V; VDS = 0 V VGS= 10 V; VDS = 350 V; ID = 100 A 0.05 mA mA miniBLOC package - Electrically isolated copper base - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation due to AlN ceramic substrate - International standard package SOT-227 - Easy screw assembly fast CoolMOS power MOSFET - 2nd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness Enhanced total power density 200 nA 440 112 246 30 95 100 10 0.9 1.1 nC nC nC ns ns ns ns V VGS= 10 V; VDS = 380 V; ID = 50 A; RG = 1 (reverse conduction) IF = 37.5 A; VGS = 0 V Applications 0.22 K/W Switched mode power supplies (SMPS) Uninterruptible power supplies (UPS) Power factor correction (PFC) Welding Inductive heating CoolMOS is a trademark of Infineon Technologies AG. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2001 IXYS All rights reserved 1-3 130 IXKN 75N60C Component Symbol VISOL TVJ Tstg Md mounting torque terminal connection torque (M4) Conditions with heatsink compound Conditions IISOL 1 mA; 50/60 Hz Maximum Ratings 2500 -40...+150 -40...+125 1.5 1.5 V~ C C Nm Nm miniBLOC, SOT-227 B Symbol RthCH Weight Characteristic Values min. typ. max. 0.1 30 K/W g Dim. A B C D E F G H J K L M N O P Q R S T U V W Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 3.30 0.780 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.20 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 4.57 0.830 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.489 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 0.130 19.81 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 0.180 21.08 M4 screws (4x) supplied (c) 2001 IXYS All rights reserved 2-3 IXKN 75N60C 250 A VGS = 18 - 12 V 0.16 10 V VGS = 8 V 200 ID TVJ = 25C 0.12 RDSon 8V TVJ = 25C 150 100 50 0 0 4 8 12 VDS 0.08 10 V 0.04 12-18 V 0.00 16 V 20 0 50 100 150 ID 200 A 250 Fig. 1: typ. Output Characteristics Fig. 2: typ. RDSon vs. Drain Current 0.10 250 A ID 200 ID = 50 A TVJ = 25C 0.08 RDSon 0.06 0.04 0.02 0.00 -40 0 150 100 50 0 TVJ = 125C 40 80 TVJ 120 C 160 0 2 4 6 8 VGS 10 V 12 Fig. 3: typ. RDSon vs. Junction Temperature Fig. 4: typ. Input Admittance 16 V 14 VGS 1 K/W 0.1 ZthJC 0.01 single pulse 12 10 8 6 4 2 0 0 100 200 300 400 500 QG nC 600 0.001 700 0.0001 0.00001 0.0001 0.001 IXKN75N60C 0.01 0.1 t 1 s 10 Fig. 5: typ. Gate Charge Characteristic Curve Fig. 6: typ. Transient Thermal Impedance (c) 2001 IXYS All rights reserved 3-3 |
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