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Nov 2002
AO4409 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4409 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.
Features
VDS (V) = -30V ID = -15 A Max RDS(ON) < 7.5m (VGS = -10V) Max RDS(ON) < 12m (VGS = -4.5V)
SOIC-8 Top View S S S G D D D D
D
G S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum -30 20 -15 -12.8 -80 3 2.1 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 26 50 14
Max 40 75 24
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO4409
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-4.5V, ID=-10A Forward Transconductance VDS=-5V, ID=-15A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-15A TJ=125C 35 -1.4 80 6.2 8.2 9.5 50 -0.71 7.5 11.5 12 -1 -5 5270 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 945 745 2 100 VGS=-10V, VDS=-15V, ID=-15A 51.5 14.5 23 14 16.5 76.5 37.5 36.7 28 -1.9 Min -30 -5 -25 100 -2.7 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Rg Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qg(4.5V) Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=-10V, VDS=-15V, RL=1, RGEN=3
IF=-15A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO4409 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60 -10V 50 40 -ID (A) -4V 30 20 10 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 10 VGS=-4.5V 8 RDS(ON) (m) Normalized On-Resistance 1.4 VGS=-3V 10 0 1 1.5 2 2.5 3 3.5 4 -VGS(Volts) Figure 2: Transfer Characteristics 1.6 ID=-15A VGS=-10V -6V -4.5V -3.5V -ID(A) 50 40 30 20 60 VDS=-5V
125C 25C
6 VGS=-10V 4
1.2
VGS=-4.5V
1
2 0 5 10 15 20 25 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 20 ID=-15A 16 RDS(ON) (m) 12 125C 8 25C 4 0 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E+02 1.0E+01 1.0E+00 -IS (A) 1.0E-01 1.0E-02 1.0E-03 25C 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics VGS=0V 125C
Alpha and Omega Semiconductor, Ltd.
AO4409 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 VDS=-15V ID=-15A Capacitance (pF) 8000 7000 6000 5000 4000 3000 2000 1000 0 0 20 60 80 100 -Qg (nC) Figure 7: Gate-Charge Characteristics 40 120 Crss 0 0 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss Ciss
8 -VGS (Volts)
6
4
2
100.0 RDS(ON) limited 10.0 -ID (Amps) 100s 1ms Power (W) 10ms 0.1s 1s TJ(Max)=150C TA=25C 0.1 0.1 1 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W 1 10s DC 10s
100 80 60 40 20 0 0.001 TJ(Max)=150C TA=25C
1.0
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Z JA Normalized Transient Thermal Resistance
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD Ton Single Pulse
0.1 T
0.01 0.00001
0.0001
0.001
1 10 Pulse 0.1 Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
0.01
100
1000
Alpha & Omega Semiconductor, Ltd.
ALPHA & OMEGA
SEMICONDUCTOR, INC.
SOP-8 Package Data
DIMENSIONS IN MILLIMETERS SYMBOLS
DIMENSIONS IN INCHES
A A1 A2 b c D E1 e E h L aaa
MIN 1.45 0.00 --- 0.33 0.19 4.80 3.80 5.80 0.25 0.40 --- 0
NOM 1.50 --- 1.45 --- --- --- --- 1.27 BSC --- --- --- --- ---
MAX 1.55 0.10 --- 0.51 0.25 5.00 4.00 6.20 0.50 1.27 0.10 8
MIN 0.057 0.000 --- 0.013 0.007 0.189 0.150 0.228 0.010 0.016 --- 0
NOM 0.059 --- 0.057 --- --- --- --- 0.050 BSC --- --- --- --- ---
MAX 0.061 0.004 --- 0.020 0.010 0.197 0.157 0.244 0.020 0.050 0.004 8
NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE 0.10 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.10 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE
PACKAGE MARKING DESCRIPTION
RECOMMENDED LAND PATTERN
LOGO 4 4 0 9
FAYWLC
NOTE: LOGO 4409 F A Y W LC
- AOS LOGO - PART NUMBER CODE. - FAB LOCATION - ASSEMBLY LOCATION - YEAR CODE - WEEK CODE. - ASSEMBLY LOT CODE
SOP-8 PART NO. CODE
UNIT: mm
PART NO. AO4409
CODE 4409
Rev. A
ALPHA & OMEGA
SEMICONDUCTOR, INC.
SO-8 Carrier Tape
SO-8 Tape and Reel Data
SO-8 Reel
SO-8 Tape
Leader / Trailer & Orientation

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