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| GFB75N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 6.5m ID 75A NCHT uct TRENFE Prod GE New TO-263AB TM 0.380 (9.65) 0.420 (10.67) 0.245 (6.22) Min. D D 0.160 (4.06) 0.190 (4.83) G 0.045 (1.14) 0.055 (1.40) S 0.320 (8.13) 0.360 (9.14) G PIN D S 0.575 (14.60) 0.625 (15.88) 0.047 (1.19) 0.055 (1.40) Mounting Pad Layout TO-263AB 0.33 (8.38) 0.08 (2.032) 0.24 (6.096) 0.04 (1.016) 0.63 (17.02) 0.12 (3.05) Seating Plate -T0.095 (2.41) 0.100 (2.54) 0.027 (0.686) 0.037 (0.940) 0.090 (2.29) 0.110 (2.79) 0.018 (0.46) 0.025 (0.64) 0.080 (2.03) 0.110 (2.79) 0.42 (10.66) Dimensions in inches and (millimeters) Features * Advanced Trench Process Technology * High Density Cell Design for Ultra Low On-Resistance * Specially Designed for Low Voltage DC/DC Converters * Fast Switching for High Efficiency * High temperature soldering in accordance with CECC802/Reflow guaranteed Mechanical Data Case: JEDEC TO-263 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 Mounting Position: Any Weight: 1.3g Maximum Ratings and Thermal Characteristics (TA = 25C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TA = 25C TA = 100C Symbol VDS VGS ID IDM PD TJ, Tstg TL RJC RJA Limit 30 20 75 240 62.5 25 -55 to 150 275 2.0 62.5 Unit V A W C C C/W C/W 8/1/00 Operating Junction and Storage Temperature Range Lead Temperature (1/8" from case for 5 sec.) Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance (PCB Mounted) Note: (1) Maximum DC current limited by the package GFB75N03 N-Channel Enhancement-Mode MOSFET Electrical Characteristics (TJ = 25C unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance(2) Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Body Leakage On-State Drain Current (2) (2) Symbol Test Condition Min Typ Max Unit BVDSS RDS(on) VGS(th) IDSS IGSS ID(on) gfs VGS = 0V, ID = 250A VGS = 10V, ID = 38A VGS = 4.5V, ID = 31A VDS = VGS, ID = 250A VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VDS 5V, VGS = 10V VDS = 15V, ID = 38A 30 -- -- 1.0 -- -- 75 -- -- 5.8 8.5 -- -- -- -- 61 -- 6.5 9.5 3.0 1.0 100 -- -- V m V A nA A S Forward Transconductance Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS=15V, ID=38A, VGS=5V VDS = 15V, VGS = 10V ID = 38A -- -- -- -- -- 32.5 63 11 11 13 16 94 38 3240 625 285 46 90 -- -- 26 29 132 57 -- -- -- pF ns nC VDD = 15V, RL = 15 ID 1A, VGEN = 10V RG = 6 -- -- -- -- VDS = 15V, VGS = 0V f = 1.0MHZ -- -- Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage Notes: (1) Maximum DC current limited by the package (2) Pulse test; pulse width 300 s, duty cycle 2% IS VSD -- IS = 38A, VGS = 0V -- -- -- 0.9 75 1.3 A V VDD ton RL td(on) VOUT Output, VOUT 10% toff tr 90% VIN D td(off) tf 90 % 10% INVERTED VGS RGEN G DUT 90% 50% 50% S Input, VIN 10% PULSE WIDTH Switching Test Circuit Switching Waveforms GFB75N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 1 - Output Characteristics 100 10V 6.0V 4.5V 80 70 VDS = 10V 4.0V Fig. 2 - Transfer Characteristics ID -- Drain Source Current (A) 80 5.0V 3.5V 60 ID -- Drain Source Current (A) 60 50 40 30 25C 20 10 0 TJ = 125C --55C 40 3.0V 20 VGS = 2.5V 0 0 1 2 3 4 1 2 3 4 5 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) Fig. 3 - Threshold Voltage vs. Temperature V(th) -- Gate-to-Source Threshold Voltage (V) 1.7 ID = 250A 0.016 0.014 Fig. 4 - On-Resistance vs. Drain Current RDS(ON) -- On-Resistance () 1.5 1.3 1.1 0.012 0.01 VGS = 4.5V 0.008 0.006 0.004 0.002 0 VGS = 10V 0.9 0.7 0.5 --50 --25 0 25 50 75 100 125 150 0 20 40 60 80 100 TJ -- Junction Temperature (C) ID -- Drain Current (A) Fig. 5 - On-Resistance vs. Junction Temperature 1.6 VGS = 10V ID = 38A 0.03 Fig. 6 - On-Resistance vs. Gate-to-Source Voltage ID = 38A RDS(ON) -- On-Resistance (Normalized) 1.4 RDS(ON) -- On-Resistance () 0.025 0.02 1.2 0.015 TJ = 125C 1 0.01 0.005 0.8 25C 0.6 --50 0 --25 0 25 50 75 100 125 150 2 4 6 8 10 TJ -- Junction Temperature (C) VGS -- Gate-to-Source Voltage (V) GFB75N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 7 - Gate Charge 10 4000 VDS = 15V ID = 38A 8 3500 f = 1MHZ VGS = 0V Ciss Fig. 8 - Capacitance VGS -- Gate-to-Source Voltage (V) C -- Capacitance (pF) 3000 2500 2000 1500 1000 6 4 2 500 0 0 10 20 30 40 50 60 70 0 Crss Coss 0 5 10 15 20 25 30 Qg -- Gate Charge (nC) VDS -- Drain-to-Source Voltage (V) Fig. 9 - Source-Drain Diode Forward Voltage 100 VGS = 0V 41 Fig. 10 - Breakdown Voltage vs. Junction Temperature ID = 250A 40 39 IS -- Source Current (A) 10 1 TJ = 125C BVDSS -- Breakdown Voltage (V) 1 1.2 1.4 38 0.1 25C --55C 37 36 35 --50 0.01 0 0.2 0.4 0.6 0.8 --25 0 25 50 75 100 125 150 VSD -- Source-to-Drain Voltage (V) TJ -- Junction Temperature (C) |
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