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| THD218DHI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)) NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE. 3 2 1 s APPLICATIONS HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION This devices is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The THD series is designed for use in horizontal deflection circuits in televisions and monitors. ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC ICM IB I BM Pt ot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Tot al Dissipation at T c = 25 C Storage Temperature Max. Ope rating Junction Temperature o Value 1500 700 10 7 12 4 7 50 -65 to 150 150 Unit V V V A A A A W o o C C September 1997 1/6 THD218DHI THERMAL DATA R thj-ca se Thermal Resistance Junction-case o Max 2.5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol ICES I EBO V CE(sat ) VBE( sat) hFE Parameter Collecto r Cut-of f Current (VBE = 0) Test Conditions VCE = 1500 V VCE = 1500 V T j = 125 oC Min. Typ. Max. 0. 2 2 300 IB = 1 A IB = 1 A VCE = 5 V VCE = 5 V 5 3.5 4.7 0.48 1. 5 1. 3 10 Unit mA mA mA V V Emitter Cut-off Current VEB = 5 V (I C = 0) Collecto r-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain INDUCTIVE LOAD Storage Time Fall Time IC = 4 A IC = 4 A IC = 4 A IC = 4 A IC = 4 A I B1 = 1 A Tj = 100 o C ts tf f = 15625 Hz IB2 = -2 A Vc eflyb ack = 1050 sin 106 t V 5 s s VF Diode Forward Voltage I F = 4 A 2. 5 V Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area Thermal Impedance 2/6 THD218DHI Derating Curve DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Inductive Fall TimeI Inductive Storage Time 3/6 THD218DHI Reverse Biased SOA BASE DRIVE INFORMATION In order to saturate the power switch and reduce conduction losses, adequate direct base current IB1 has to be provided for the lowest gain hFE at 100 oC (line scan phase). On the other hand, negative base current IB2 must be provided to turn off the power transistor (retrace phase). Most of the dissipation, in the deflection application, occurs at switch-off. Therefore it is essential to determine the value of IB2 which minimizes power losses, fall time tf and, consequently, Tj. A new set of curves have been defined to give total power losses, ts and tf as a function of IB2 at both 16 KHz and 32 KHz scanning frequencies for choosing the optimum negative drive. The test circuit is illustrated in Figure 1: Inductive Load Switching Test Circuit. figure 1. Inductance L1 serves to control the slope of the negative base current IB2 to recombine the excess carrier in the collector when base current is still present, this would avoid any tailing phenomenon in the collector current. The values of L and C are calculated from the following equations: 1 1 1 L (IC)2 = C (VCEfly)2 = 2 f = 2 2 L C Where IC= operating collector current, VCEfly= flyback voltage, f= frequency of oscillation during retrace. 4/6 THD218DHI ISOWATT218 MECHANICAL DATA DIM. MIN. A C D D1 E F G H L1 L2 L3 L4 L5 L6 M N U 5.35 3.3 2.9 1.88 0.75 1.05 10.8 15.8 20.8 19.1 22.8 40.5 4.85 20.25 3.5 2.1 4.6 mm TYP. MAX. 5.65 3.8 3.1 2.08 1 1.25 11.2 16.2 21.2 19.9 23.6 42.5 5.25 20.75 3.7 2.3 MIN. 0.210 0.130 0.114 0.074 0.029 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090 L3 N A E L2 L5 L6 F M U H 1 L1 L4 2 3 G D1 C D P025C 5/6 THD218DHI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all informationpreviously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A . .. 6/6 |
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