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| DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Description The 2SK3114 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. Ordering Information Part Number 2SK3114 Package Isolated TO-220 Features * Low gate charge : QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 4.0 A) * Gate voltage rating : 30 V * Low On-state resistance : RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 2.0 A) * Avalanche Capability Ratings * Isolated TO-220 package Absolute Maximum Ratings (TA = 25 C) Drain to source voltage (VGS = 0 V) Gate to source voltage (VDS = 0 V) Drain current (DC) (TC = 25 C) Drain current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 600 30 4.0 16 2.0 30 150 -55 to +150 4.0 10.7 3.5 V V A A W W C C A mJ V/ns Total power dissipation (TA = 25 C) Total power dissipation (TC = 25 C) Channel temperature Storage temperature Single avalanche current Single avalanche energy Diode recovery dv/dt Note3 Note2 Note2 IAS EAS dv/dt Notes 1. PW 10 s, Duty Cycle 1 % 2. Starting Tch = 25 C, VDD = 150 V, RG = 25 , VGS = 20 V 0 V 3. IF 2.0 A, Vclamp = 600 V, di/dt 100 A / s, TA = 25 C Document No. D13337EJ1V0DS00 (1st edition) Date Published September 1998 NS CP (K) Printed in Japan (c) 1998 2SK3114 Electrical Characteristics (TA = 25 C) Characteristics Drain leakage current Gate leakage current Gate cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Diode forward voltage Reverse recovery time Reverse recovery charge Symbol IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 2.5 1.0 1.6 550 115 13 12 6 35 12 15 4 4.4 0.9 1.3 4.3 2.2 MIN. TYP. MAX. 100 10 3.5 Unit Test Conditions VDS = 600 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 2.0 A VGS = 10 V, ID = 2.0 A VDS = 10 V, VGS = 0 V, f = 1 MHz A A V S pF pF pF ns ns ns ns nC nC nC V VDD = 150 V, ID = 2.0 A, VGS(on) = 10 V, RG = 10 , RL = 10 VDD = 450 V, VGS = 10 V, ID = 4.0 A IF = 4.0 A, VGS = 0 V IF = 4.0 A, VGS = 0 V, di/dt = 50 A / s s C Test Circuit 1 Avalanche Capability D.U.T. RG = 25 PG. 0V 50 L VDD Test Circuit 2 Switching Time D.U.T. RL PG. RG RG = 10 VDD ID 90 % 90 % ID VGS VGS Wave Form 0 10 % VGS(on) 90 % VGS = 20 V BVDSS IAS ID VDD VDS VGS 0 ID Wave Form 0 10 % td(on) tr ton td(off) toff 10 % tf Starting Tch =1 s Duty Cycle 1% Test Circuit 3 Gate Charge D.U.T. IG = 2 mA PG. 50 RL VDD 2 2SK3114 Typical Characteristics (TA = 25 C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 8V 10 VGS = 10 V 6V Pulsed FORWARD TRANSFER CHARACTERISTICS VDS = 10V Pulsed Tch = 125 C 75 C 100 ID - Drain Current - A ID - Drain Current - A 10 5 1.0 25 C -25 C 0.1 0 10 20 30 40 0 5 10 15 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE 5.0 10 VDS = 10 V ID = 1 mA FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VGS(off) - Gate to Source Cutoff Voltage - V 4.0 3.0 | yfs | - Forward Transfer Admittance - S Tch = -25 C 25 C 75 C 125 C 1.0 2.0 1.0 0 -50 0 50 100 150 0.1 0.1 VDS = 10 V Pulsed 1.0 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 10 Tch - Channel Temperature - C DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 3.0 RDS (on) - Drain to Source On-State Resistance - Pulsed RDS(on) - Drain to Source On-State Resistance - 3.0 VGS = 10 V Pulsed ID = 4.0 A 2.0 2.0 A VGS = 20 V 2.0 1.0 1.0 0 0 5 10 15 0 1.0 10 100 VGS - Gate to Source Voltage - V ID - Drain Current - A 3 2SK3114 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE RDS (on) - Drain to Source On-State Resistance - 4.0 2.0A 3.0 ISD - Diode Forward Current - A ID = 4.0A 100 10 2.0 1.0 1.0 VGS = 10 V Pulsed 0 50 100 150 Tch - Channel Temperature - C 0.1 VGS = 10 V 0 0.5 0V Pulsed 1.5 0 -50 1.0 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 000 Ciss, Coss, Crss - Capacitance - pF SWITCHING CHARACTERISTICS 100 td(off) tf 10 td(on) 1 000 Ciss 100 Coss 10 Crss 1 0.1 td(on), tr, td(off), tf - Switching Time - ns VGS = 0 V f = 1 MHZ tr 1 VDD = 150 V VGS = 10 V RG = 10 1 ID - Drain Current - A 10 1 10 100 0.1 0.1 VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT 10 000 trr - Reverse Recovery Time - ns DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 S di/dt = 50 A/ VGS = 0 V ID = 4 A 14 VDS - Drain to Source Voltage - V 600 1 000 VDD = 450 V 300 V 150 V 12 10 VGS 8 6 400 100 200 VDS 0 4 8 12 4 2 0 16 10 0.01 0.1 1 10 ID - Drain Current - A Qg - Gate Charge - nC 4 VGS - Gate to Source Voltage - V 2SK3114 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 40 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % 80 PT - Total Power Dissipation - W 20 40 60 80 100 120 140 160 30 60 20 40 20 10 0 0 0 20 40 60 80 100 120 140 160 Tch - Channel Temperature - C TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 ID - Drain Current - A 10 =1 d 0 ite s im ID(DC) 10 )L 0 on s D( R Po 1m we s rD 3 10 ms iss 1 10 m ipa 0m s tio s n Lim ite d TC = 25C ID(pulse) PW 0.1 1 Single Pulse 10 100 1 000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - C/W 100 Rth(CH-A) = 62.5 C/W 10 Rth(CH-C) = 4.17 C/W 1 0.1 Single Pulse 100 1m 10m 100m 1 10 100 1 000 PW - Pulse Width - s 0.01 10 5 2SK3114 100 SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 120 100 VDD = 150 V RG = 25 VGS = 20 V IAS 4 A IAS - Single Avalanche Energy - mJ Energy Derating Factor - % 0V 10 IAS = 4 A EAS =1 0.7 80 60 40 20 0 25 mJ 1.0 RG = 25 VDD = 150 V 0V VGS = 20 V Starting Tch = 25 C 100 1m 10m L - Inductive Load - H 0.1 10 50 75 100 125 150 Starting Tch - Starting Channel Temperature - C Package Drawing (Unit : mm) Isolated TO-220 (MP-45F) Equivalent Circuit Drain 10.00.3 3.20.2 4.50.2 2.70.2 Gate Body Diode 15.00.3 12.00.2 Gate Protection Diode 30.1 Source 40.2 0.70.1 2.54 TYP. 1.30.2 1.50.2 2.54 TYP. 13.5 MIN. 2.50.1 0.650.1 1.Gate 2.Drain 3.Source 123 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 2SK3114 [MEMO] 7 2SK3114 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5 8 |
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