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| 2SK3669 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) 2SK3669 Switching Regulators, for Audio Amplifier and Motor Drive Applications * * * * Low drain-source ON resistance: RDS (ON) = 95 m (typ.) High forward transfer admittance: |Yfs| = 6 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 100 V) Enhancement-mode : Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP IDP PD EAS IAR (Note 3) Channel temperature Storage temperature range EAR Tch Tstg Rating 100 100 20 10 15 28 20 280 10 2 150 -55 to 150 W mJ A mJ C C A Unit V V V Pulse (tw 10 ms) (Note 1) Pulse (tw 1 ms) (Note 1) JEDEC JEITA TOSHIBA 2-7J1B Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy Weight: 0.36 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 6.25 125 Unit C/ W C/ W Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = 50 V, Tch = 25C (initial), L = 3.44 mH, IAR = 10 A, RG = 25 W Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 2003-03-12 2SK3669 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd VDD 80 V, VGS = 10 V, ID = 10 A Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton 10 V VGS 0V 50 ID = 10 A RL = 5 W VOUT VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 5 A VDS = 10 V, ID = 5 A Min 3/4 3/4 100 3.0 3/4 3 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 95 6 480 9 220 2 12 2 12 8.0 5.6 2.4 Max 100 100 3/4 5.0 125 3/4 3/4 3/4 3/4 3/4 3/4 ns 3/4 3/4 3/4 3/4 3/4 nC pF Unit nA mA V V mW S VDD 50 V Duty 1%, tw = 10 ms Source-Drain Diode Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Symbol IDR IDRP IDRP VDS2F trr Qrr Test Condition 3/4 3/4 3/4 IDR1 = 10 A, VGS = 0 V IDR = 10 A, VGS = 0 V, dIDR/dt = 50 A/ms Min 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 65 90 Max 10 15 28 -1.7 3/4 3/4 Unit A A A V ns nC Pulse drain reverse current (tw 10 ms) (Note 1) Pulse drain reverse current (tw 1 ms) (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Marking K3669 Type Lot Number Month (starting from alphabet A) Year (last number of the christian era) 2 2003-03-12 2SK3669 ID - VDS 10 Common source Tc = 25C Pulse test 15 6 7.5 20 10 9 8.5 8 16 15 9.5 ID - VDS 9 Common source Tc = 25C Pulse test 8.5 8 (A) ID ID (A) 10 12 Drain current 4 Drain current 8 7 8 7.5 VGS = 6.5 V 2 VGS = 6.5 V 0 0 4 0.4 0.8 1.2 1.6 2.0 0 0 2 4 6 8 10 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 20 Common source VDS = 10 V Pulse test 2.0 VDS - VGS Common source Tc = 25C Pulse test 16 (V) VDS Drain-source voltage 1.6 ID (A) 12 1.2 ID = 10 A 0.8 100 0.4 Drain current 8 Ta = -55C 4 100 25 0 0 4 8 12 16 20 5 2.5 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) iYfsi - ID 50 30 5 3 RDS (ON) - ID (S) Common source Tc = 25C Pulse test iYfsi 10 5 3 Drain-source on resistance RDS (ON) (mW) Forward transfer admittance Tc = -55C 100 25 1 0.5 0.3 VGS = 10 V 0.1 0.05 0.03 15 1 0.5 0.3 Common source VDS = 10 V Pulse test 0.1 0.1 1 10 100 0.01 0.1 1 10 100 Drain current ID (A) Drain current ID (A) 3 2003-03-12 2SK3669 RDS (ON) - Tc (mW) 250 Common source VGS = 10 V Pulse test ID = 10 A 5A 150 2.5 100 IDR - VDS RDS (ON) 200 Drain reverse current IDR (A) 10 10 Drain-source on resistance 100 3 1 Common source 1 VGS = 0, -1 V 1 1.5 Tc = 25C Pulse test 2 2.5 50 0 -80 -40 0 40 80 120 160 0.1 0 0.5 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 3000 10 Vth - Tc Common source VDS = 10 V 8 ID = 1 mA Pulse test 6 500 Ciss Capacitance C (pF) 300 100 50 30 Common source 10 Tc = 25C Crss 1 3 10 30 100 300 f = 1 MHz 5V GS = 0 V 3 0.1 0.3 Coss Gate threshold voltage Vth (V) 1000 4 2 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 25 100 Dynamic input/output characteristics Common source ID = 10 A VDD = 80 V Tc = 25C Pulse test 25 (W) (V) 20 80 20 PD VDS Drain power dissipation Drain-source voltage 10 40 VGS 20 10 5 5 0 0 40 80 120 160 0 0 5 10 15 0 20 Case temperature Tc (C) Total gate charge Qg (nC) 4 2003-03-12 Gate-source voltage 15 60 15 VGS (V) VDS 2SK3669 rth - tw 3 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM t T Single pulse Duty = t/T Rth (ch-c) = 6.25C/W 1m 10 m 100 m 1 10 0.01 0.003 10 m 100 m Pulse width tw (S) Safe operating area 100 300 EAS - Tch 100 ms* 1 ms* (mJ) Avalanche energy EAS ID max (pulsed)* 240 10 (A) 5 3 ID max (continuous) 10 ms* 180 ID Drain current 1 0.5 0.3 120 60 * Single nonrepetitive pulse Tc = 25C 0.03 Curves must be derated linearly with increase in temperature. 0.01 0.1 0.3 1 3 0.05 0.1 0 25 50 75 100 125 150 Channel temperature (initial) Tch VDSS max 10 30 100 300 (C) Drain-source voltage VDS (V) 15 V -15 V BVDSS IAR VDD VDS Waveform AS = ae o 1 B VDSS / x L x I2 x c cB / 2 e VDSS - VDD o Test circuit RG = 25 W VDD = 50 V, L = 3.44 mH 5 2003-03-12 2SK3669 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2003-03-12 |
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