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 STS4DNF30L
DUAL N-CHANNEL 30V - 0.039 - 4A SO-8 STripFETTM POWER MOSFET
PRELIMINARY DATA TYPE STS4DNF30L
s s
VDSS 30 V
RDS(on) < 0.050
ID 4A
s
TYPICAL RDS(on) = 0.039 STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE
DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
SO-8
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS BATTERY MANAGMENT IN NOMADIC EQUIPMENT s POWER MANAGMENT IN CELLULAR PHONES s DC MOTOR DRIVE
s
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (q) PTOT Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Dual Operation Value 30 30 16 4 2.5 16 2 Unit V V V A A A W
(q)Pulse width limited by safe operating area.
August 2002
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STS4DNF30L
THERMAL DATA
Rthj-amb Tstg Tl (*)Thermal Resistance Junction-ambient Max Storage Temperature Range Junction Temperature
(*) Mounted on FR-4 board (t 10sec)
62.5 -55 to 150 150
C/W C C
MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 16 V Min. 30 1 10 100 Typ. Max. Unit V A A nA
ON (1)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250A VGS = 10V, ID = 2 A VGS = 4.5V, ID = 2 A Min. 1 0.039 0.046 0.050 0.060 Typ. Max. Unit V
DYNAMIC
Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 2 A VDS = 25V, f = 1 MHz, VGS = 0 Min. 1 Typ. 3 330 90 40 Max. Unit S pF pF pF
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STS4DNF30L
ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 15 V, ID = 2 A RG = 4.7 VGS = 4.5 V (see test circuit, Figure 3) VDD = 24 V, ID = 4 A, VGS = 10 V Min. Typ. 11 100 6.5 3.6 2 9 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol td(off) tf tr(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-Voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 15 V, ID = 2 A, RG = 4.7, VGS = 4.5 V (see test circuit, Figure 3) VDD = 24 V, ID = 4 A, RG = 4.7, VGS = 4.5 V (see test circuit, Figure 5) Min. Typ. 25 22 22 55 75 Max. Unit ns ns ns ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 4 A, VGS = 0 ISD = 4 A, di/dt = 100A/s, VDD = 20 V, Tj = 150C (see test circuit, Figure 5) 30 18 1.2 Test Conditions Min. Typ. Max. 4 16 1.2 Unit A A V ns nC A
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
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STS4DNF30L
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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STS4DNF30L
SO-8 MECHANICAL DATA
DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019
0016023
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STS4DNF30L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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