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PROFET(R) BTS 426 L1
Smart Highside Power Switch
Features
* Overload protection * Current limitation * Short circuit protection * Thermal shutdown * Overvoltage protection (including load dump) * Fast demagnetization of inductive loads * Reverse battery protection1) * Undervoltage and overvoltage shutdown with auto-restart and hysteresis * Open drain diagnostic output * Open load detection in ON-state * CMOS compatible input * Loss of ground and loss of Vbb protection * Electrostatic discharge (ESD) protection
Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Current limitation
Vbb(AZ) Vbb(on) RON IL(ISO) IL(SCr)
43 V 5.0 ... 34 V 60 m 7.0 A 16 A
TO-220AB/5
5 1 Straight leads
5
5 1
Standard
SMD
Application
* C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads * All types of resistive, inductive and capacitve loads * Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS(R) technology. Fully protected by embedded protection functions.
+ V bb
3
Voltage source
Overvoltage protection
Current limit
Gate protection
V Logic
Voltage sensor Charge pump Level shifter Rectifier ESD Logic Open load Short to Vbb detection
R O
Limit for unclamped ind. loads
OUT
2
IN
Temperature sensor
5
Load
4
ST
GND
(R) PROFET
Load GND
GND
1
Signal GND
1)
With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST connection, reverse load current limited by connected load.
Semiconductor Group
1
12.96
BTS 426 L1
Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S O Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback, low on failure Output to the load
Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Supply voltage for full short circuit protection Tj Start=-40 ...+150C Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3)= 2 , RL= 1.7 , td= 200 ms, IN= low or high Load current (Short circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150C, TC = 150C const. IL = 7.0 A, ZL = 24 mH, 0 : Electrostatic discharge capability (ESD) IN: (Human Body Model) all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Symbol Vbb Vbb
Values 43 34 60 self-limited -40 ...+150 -55 ...+150 75 0.74 1.0 2.0 -10 ... +16 2.0 5.0
Unit V V V A C W J kV V mA
VLoad dump4) IL Tj Tstg Ptot EAS VESD VIN IIN IST
Input voltage (DC) Current through input pin (DC) Current through status pin (DC)
see internal circuit diagrams page 6
Thermal Characteristics
Parameter and Conditions Thermal resistance Symbol min --chip - case: RthJC junction - ambient (free air): RthJA SMD version, device on PCB5): Values typ max -- 1.67 -75 34 Unit K/W
2)
3) 4) 5)
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the protection of the input is integrated. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air.
Semiconductor Group
2
BTS 426 L1 Electrical Characteristics
Parameter and Conditions
at Tj = 25 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Load Switching Capabilities and Characteristics
Tj=25 C: Tj=150 C: Nominal load current, ISO Norm (pin 3 to 5) VON = 0.5 V, TC = 85 C Output current (pin 5) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 7 Turn-on time IN to 90% VOUT: to 10% VOUT: Turn-off time IN RL = 12 , Tj =-40...+150C Slew rate on 10 to 30% VOUT, RL = 12 , Tj =-40...+150C Slew rate off 70 to 40% VOUT, RL = 12 , Tj =-40...+150C
Operating Parameters Operating voltage6) Undervoltage shutdown Undervoltage restart
On-state resistance (pin 3 to 5) IL = 2 A
RON
-5.8
50 100 7.0 --
60 120 -10
m
IL(ISO) IL(GNDhigh)
--
A mA s
ton toff
dV /dton -dV/dtoff
80 80 0.1 0.1
200 230 ---
400 450 1 1
V/s V/s
Tj =-40...+150C: Tj =-40...+150C: Tj =-40...+25C: Tj =+150C: Undervoltage restart of charge pump Tj =-40...+150C: see diagram page 12 Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Tj =-40...+150C: Overvoltage shutdown Tj =-40...+150C: Overvoltage restart Tj =-40...+150C: Overvoltage hysteresis Tj =-40...+150C: Overvoltage protection7) Ibb=40 mA Standby current (pin 3) VIN=0 Tj=-40...+25C: Tj= 150C:
Leakage output current (included in Ibb(off)) VIN=0
Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp)
Vbb(under)
5.0 3.5 ---34 33 -42
---5.6 0.2 --0.5 47
34 5.0 5.0 7.0 7.0 -43 ----
V V V V V V V V V
Vbb(over) Vbb(o rst) Vbb(over) Vbb(AZ)
Ibb(off) IL(off)
----
10 12 --
25 28 12
A A
6) 7)
At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V See also VON(CL) in table of protection functions and circuit diagram page 7.
Semiconductor Group
3
BTS 426 L1
Parameter and Conditions
at Tj = 25 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max -1.8 3.5
Unit
Operating current (Pin 1)8), VIN=5 V, Tj =-40...+150C Protection Functions Initial peak short circuit current limit (pin 3 to 5) Tj =-40C: Tj =25C: Tj =+150C: Repetitive short circuit shutdown current limit Tj = Tjt (see timing diagrams, page 10) Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA: Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 3 to 1) 9) Reverse battery voltage drop (Vout > Vbb) IL = -4 A Tj=150 C: Diagnostic Characteristics Open load detection current
(on-condition)
IGND
mA
IL(SCp)
21 15 11 32 25 17 16 47 -10 -610 43 35 24 -53 --32 -A
IL(SCr)
-A V C K V mV
VON(CL) Tjt Tjt -Vbb -VON(rev)
41 150 ----
Tj=-40 C: IL (OL) Tj=25 ..150C:
20 10 2
--3
850 750 4
mA V
Open load detection voltage10) (off-condition) VOUT(OL) Tj=-40..150C: Internal output pull down (pin 5 to 1), VOUT=5 V, Tj=-40..150C RO
4
10
30
k
8) 9)
Add IST, if IST > 0, add IIN, if VIN>5.5 V Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). 10) External pull up resistor required for open load detection in off state.
Semiconductor Group
4
BTS 426 L1
Parameter and Conditions
at Tj = 25 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Input and Status Feedback11) Input resistance Tj=-40..150C, see circuit page 6 Input turn-on threshold voltage Tj =-40..+150C: Tj =-40..+150C: Input turn-off threshold voltage Input threshold hysteresis Off state input current (pin 2), VIN = 0.4 V, Tj =-40..+150C On state input current (pin 2), VIN = 3.5 V, Tj =-40..+150C Delay time for status with open load after switch off (see timing diagrams, page 11), Tj =-40..+150C Status invalid after positive input slope Tj=-40 ... +150C: (open load) Status output (open drain) Zener limit voltage Tj =-40...+150C, IST = +1.6 mA: Tj =-40...+25C, IST = +1.6 mA: ST low voltage Tj = +150C, IST = +1.6 mA:
RI VIN(T+) VIN(T-) VIN(T) IIN(off) IIN(on) td(ST OL4) td(ST)
2.5 1.7 1.5 -1 20 100 --
3.5 --0.5 -50 520 250
6 3.5 --50 90 1000 600
k V V V A A s s
VST(high) VST(low)
5.4 ---
6.1 ---
-0.4 0.6
V
11)
If a ground resistor RGND is used, add the voltage drop across this resistor.
Semiconductor Group
5
BTS 426 L1 Truth Table
Inputlevel Normal operation Open load Short circuit to Vbb Overtemperature Undervoltage Overvoltage L = "Low" Level H = "High" Level L H L H L H L H L H L H Output level L H
12)
Status 425 L1 426 L1 H H H (L13)) L L14) H (L15)) H L H H H H
H H H L L L L L L
X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 11...12)
Terms
Ibb I IN 2 I ST V V bb R IN VST 4 ST GND 1 GND IGND VOUT IN 3 Vbb IL PROFET OUT 5 VON
Input circuit (ESD protection)
R IN I
ESD-ZD I GND
I
I
ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).
12) 13) 14)
Power Transistor off, high impedance with external resistor between pin 3 and pin 5 An external short of output to Vbb, in the off state, causes an internal current from output to ground. If R GND is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious. 15) Low resistance to V may be detected in ON-state by the no-load-detection bb
Semiconductor Group
6
BTS 426 L1
Status output
+5V
Open-load detection
ON-state diagnostic condition: VON < RON * IL(OL); IN high
R ST(ON)
ST
+ V bb
GND
ESDZD
ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 380 at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).
ON
VON
OUT
Logic unit
Open load detection
Inductive and overvoltage output clamp
+ V bb V Z
OFF-state diagnostic condition: VOUT > 3 V typ.; IN low
VON
R
EXT
OUT GND
OFF
V OUT
PROFET
Open load detection
VON clamped to 47 V typ.
Logic unit
R
O
Overvolt. and reverse batt. protection
+ Vbb V
Signal GND
R IN
IN
RI Logic
Z2
GND disconnect
3 IN Vbb PROFET 4 ST GND 1 V GND OUT
R ST
ST V
Z1
PROFET
GND
2
5
R GND
Signal GND
VZ1 = 6.2 V typ., VZ2 = 47 V typ., RGND = 150 , RST= 15 k, RI= 3.5 k typ.
V
bb
V
IN
V
ST
Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) . Due to VGND >0, no VST = low signal available.
Semiconductor Group
7
BTS 426 L1
GND disconnect with GND pull up
3 IN Vbb PROFET 4 ST GND 1 V V bb IN ST V V PROFET OUT EL GND GND ZL OUT
Inductive Load switch-off energy dissipation
E bb E AS V bb ELoad
2
5
IN
=
ST
{
L RL ER
Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available.
Vbb disconnect with energized inductive load
3 high 2 IN Vbb PROFET 4 ST GND 1 V OUT
Energy stored in load inductance:
EL = 1/2*L*I L
While demagnetizing load inductance, the energy dissipated in PROFET is
2
EAS= Ebb + EL - ER= VON(CL)*iL(t) dt,
5
with an approximate solution for RL > 0 :
EAS=
IL* L IL*RL *(V + |VOUT(CL)|)* ln (1+ ) |VOUT(CL)| 2*RL bb
bb
Normal load current can be handled by the PROFET itself.
Vbb disconnect with charged external inductive load
S high 2 IN 3 Vbb PROFET 4 ST GND 1 V OUT
5
D
bb
If other external inductive loads L are connected to the PROFET, additional elements like D are necessary.
Semiconductor Group
8
BTS 426 L1
Maximum allowable load inductance for a single switch off
L = f (IL ); Tj,start = 150C,TC = 150C const., Vbb = 12 V, RL = 0 Transient thermal impedance chip ambient air ZthJA = f(tp)ZthJA [K/W] 100
L [mH]
10000
10 1000 D= 0.5 0.2 0.1 0.05 0.02 0.01 0
100
1
10 0.1
1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 1E2 1E3
tp [s]
1 2 7 12 17
IL [A]
Typ. transient thermal impedance chip case ZthJC = f(tp)ZthJC [K/W] 10
1
0.1
D= 0.5 0.2 0.1 0.05 0.02 0.01 0
0.01 1E-5
1E-4
1E-3
1E-2
1E-1
1E0
1E1
tp [s]
Semiconductor Group
9
BTS 426 L1
Timing diagrams
Figure 1a: Vbb turn on: Figure 2b: Switching an inductive load
IN IN
V bb
t ST
*)
d(ST)
V
OUT
V
OUT
ST open drain
t
proper turn on under all conditions
IL I L(OL) t
*) if the time constant of load is too large, open-load-status may occur
Figure 2a: Switching a lamp, Figure 3a: Short circuit shut down by overtempertature, reset by cooling
IN ST
IN
V
OUT
IL I L(SCp) IL(SCr)
I
L
t ST t
Heating up may require several milliseconds, depending on external conditions
Semiconductor Group
10
BTS 426 L1
Figure 4a: Overtemperature: Reset if Tj IN
IN
t d(ST OL1) ST ST
t
d(ST OL2)
V
V
OUT
OUT
T
J
I
normal
L
open
normal
t
td(ST OL1) = 20 s typ., td(ST OL2) = 10 s typ
t
Figure 5a: Open load: detection in ON-state, turn on/off to open load
Figure 5c: Open load: detection in ON- and OFF-state (with REXT), turn on/off to open load
IN IN t d(ST) t
ST
d(ST OL4) ST t d(ST)
V
OUT
V
OUT
I
L
I open t t
L
open
The status delay time td(ST OL4) allows to ditinguish between the failure modes "open load" and "overtemperature".
Semiconductor Group
11
BTS 426 L1
Figure 6a: Undervoltage: Figure 7a: Overvoltage:
IN
IN
V bb V
bb(under)
V bb Vbb(u cp) V
bb(u rst)
V ON(CL)
Vbb(over)
V bb(o rst)
V V OUT
OUT
ST open drain t
ST
t
Figure 6b: Undervoltage restart of charge pump
V on VON(CL)
off-state
on-state
V
bb(over)
V
V V
bb(u rst)
bb(o rst)
bb(u cp)
V
bb(under)
charge pump starts at Vbb(ucp) =5.6 V typ.
Semiconductor Group
off-state
V bb
12
BTS 426 L1
Package and Ordering Code
All dimensions in mm
Standard TO-220AB/5
BTS426L1
Ordering code Q67060-S6108-A2
SMD TO-220AB/5, Opt. E3062 Ordering code
BTS426L1 E3062A T&R: Q67060-S6108-A4
TO-220AB/5, Option E3043 Ordering code
BTS426L1 E3043 Q67060-S6108-A3
Changed since 04.96 Date Change td(ST OL4) max reduced from 1500 Dec 1996 to 800s, typical from 400 to 320s, min limit unchanged EAS maximum rating and diagram added Zth specification added Typ. reverse battery voltage drop VON(rev) added
Components used in life-support devices or systems must be expressly authorised for such purpose! Critical components16) of the Semiconductor Group of Siemens AG, may only be used in life supporting devices or systems17) with the express written approval of the Semiconductor Group of Siemens AG.
16) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 17) Life support devices or systems are intended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. If they fail, it is reasonably to assume that the health of the user or other persons may be endangered.
Semiconductor Group
13

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