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| SI7806DN New Product Vishay Siliconix N-Channel 30-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 14.4 12.6 rDS(on) (W) 0.011 @ VGS = 10 V 0.0175 @ VGS = 4.5 V D TrenchFETr Power MOSFET D PWM Optimized D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D DC/DC Converters - Secondary Synchronous Rectifier - High-Side MOSFET in Synchronous Buck PowerPAKt 1212-8 D S 1 2 3 4 D 8 7 6 5 D D D S S G 3.30 mm 3.30 mm G S N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 30 "20 14.4 Steady State Unit V 9.2 7.4 40 A ID IDM IS PD TJ, Tstg 11.6 3.2 3.8 2.0 -55 to 150 1.3 1.5 0.8 A W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71869 S-20805--Rev. A, 17-Jun-02 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 24 65 1.9 Maximum 33 81 2.4 Unit _C/W C/W 1 SI7806DN Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 14.4 A VGS = 4.5 V, ID = 12.6 A VDS = 15 V, ID = 14.4 A IS = 3.2 A, VGS = 0 V 40 0.009 0.0145 34 0.77 1.2 0.011 0.0175 S V 1.0 3 "100 1 5 V nA mA m A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgt Qgs Qgd Rg td(on) tr td(off) tf trr IF = 3.2 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 15 V, VGS = 10 V, ID = 14.4 A VDS = 15 V, VGS = 4.5 V, ID = 14.4 A 8.5 19 3.6 3.0 2 8 12 25 10 35 15 20 40 20 70 ns W 11 24 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 35 VGS = 10 thru 4 V 30 I D - Drain Current (A) 25 20 15 10 3V 5 0 0.0 5 0 0.0 25_C -55_C I D - Drain Current (A) 30 25 20 15 10 TC = 125_C 40 35 Transfer Characteristics 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 71869 S-20805--Rev. A, 17-Jun-02 2 SI7806DN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.025 1400 1200 r DS(on) - On-Resistance ( W ) 0.020 C - Capacitance (pF) 1000 800 600 400 200 0.000 0 5 10 15 20 25 30 35 40 0 0 5 10 15 20 25 30 Crss Coss Vishay Siliconix Capacitance Ciss 0.015 VGS = 4.5 V 0.010 VGS = 10 V 0.005 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = A 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 14.4 A r DS(on) - On-Resistance (W) (Normalized) 8 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0 4 8 12 16 20 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 0.025 50 On-Resistance vs. Gate-to-Source Voltage ID = 14.4 A r DS(on) - On-Resistance ( W ) 0.020 ID = 5 A 0.015 I S - Source Current (A) TJ = 150_C 10 0.010 TJ = 25_C 0.005 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71869 S-20805--Rev. A, 17-Jun-02 www.vishay.com 3 SI7806DN Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 0.2 V GS(th) Variance (V) -0.0 -0.2 -0.4 -0.6 10 -0.8 -1.0 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Power (W) 30 ID = 250 mA 40 50 Single Pulse Power, Juncion-To-Ambient 20 Safe Operating Area 100 rDS(on) Limited IDM Limited P(t) = 0.0001 10 I D - Drain Current (A) P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 0.1 TC = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 P(t) = 10 dc VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 65_C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 1 Square Wave Pulse Duration (sec) 10-1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71869 S-20805--Rev. A, 17-Jun-02 SI7806DN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Document Number: 71869 S-20805--Rev. A, 17-Jun-02 www.vishay.com 5 |
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