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| SI7840DP New Product Vishay Siliconix N-Channel 30-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 18 15 rDS(on) (W) 0.0095 @ VGS = 10 V 0.014 @ VGS = 4.5 V D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D DC/DC Converters D Optimized for "High-Side" Synchronous Rectifier Operation PowerPAKt SO-8 D 6.15 mm S 1 2 3 S S 5.15 mm G 4 G D 8 7 6 5 D D D S N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 30 "20 18 Steady State Unit V 11 8 40 A 1.6 40 80 mJ 1.9 1.2 -55 to 150 W _C ID IDM IS IAS EAS 14 4.1 5.0 PD TJ, Tstg 3.2 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71624 S-05804--Rev. C, 25-Feb-02 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 20 52 2.1 Maximum 25 65 2.6 Unit _C/W C/W 1 SI7840DP Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 18 A VGS = 4.5 V, ID = 15 A VDS = 15 V, ID = 18 A IS = 4.1 A, VGS = 0 V 30 0.0077 0.0115 40 0.75 1.2 0.0095 0.014 S V 1.0 "100 1 5 V nA mA m A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd RG td(on) tr td(off) tf trr IF = 4.1 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 15 V, VGS = 5.0 V, ID = 18 A 15.5 3.8 6 0.8 17 14 39 19 50 26 21 60 30 80 ns W 23 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 10 thru 4 V 32 I D - Drain Current (A) I D - Drain Current (A) 32 40 Transfer Characteristics 24 3V 24 16 16 TC = 125_C 8 25_C -55_C 8 0 0 2 4 6 8 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71624 S-05804--Rev. C, 25-Feb-02 SI7840DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.020 2500 Vishay Siliconix Capacitance r DS(on) - On-Resistance ( W ) 0.016 C - Capacitance (pF) VGS = 4.5 V 0.012 VGS = 10 V 0.008 2000 Ciss 1500 1000 Coss 0.004 500 Crss 0.000 0 8 16 24 32 40 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 18 A 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 18 A r DS(on) - On-Resistance ( W) (Normalized) 12 18 24 30 8 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0 6 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 0.05 40 0.04 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) I S - Source Current (A) 10 TJ = 150_C ID = 18 A 0.03 0.02 TJ = 25_C 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71624 S-05804--Rev. C, 25-Feb-02 www.vishay.com 3 SI7840DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 -0.0 Power (W) -0.2 -0.4 -0.6 40 -0.8 -1.0 -50 0 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) 120 ID = 250 mA 160 V GS(th) Variance (V) 200 Single Pulse Power, Juncion-To-Ambient 80 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 68_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71624 S-05804--Rev. C, 25-Feb-02 |
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