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| Power Transistors 2SD2222 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1470 3.30.2 5.00.3 3.0 Unit: mm 20.00.5 s Features q q q 6.0 1.5 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 20.00.5 2.5 2.00.3 3.00.3 1.00.2 (TC=25C) Ratings 160 160 5 15 8 150 3.5 150 -55 to +150 Unit V V V A 2.70.3 0.60.2 5.450.3 10.90.5 1 2 3 A W C C 1:Base 2:Collector 3:Emitter TOP-3L Package Internal Connection C B E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h (TC=25C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 160V, IE = 0 VCE = 160V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 7A IC = 7A, IB = 7mA IC = 7A, IB = 7mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 7A, IB1 = 7mA, IB2 = -7mA, VCC = 50V 20 2 6 1.2 160 10000 3500 20000 3 3 V V MHz s s s min typ max 100 100 100 Unit A A A V FE2 Rank classification Q P Rank hFE2 3500 to 10000 7000 to 20000 2.0 1.5 Optimum for 120W HiFi output High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) 26.00.5 10.0 2.0 4.0 3.0 1 Power Transistors PC -- Ta 200 10 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3.5W) TC=25C 9 IB=1.0mA 2SD2222 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=1000 30 10 3 1 0.3 0.1 0.03 0.01 0.1 TC=-25C 25C 125C VCE(sat) -- IC Collector power dissipation PC (W) 180 160 140 120 100 80 60 40 20 (2) (3) 0 0 20 (1) Collector current IC (A) 8 7 0.9mA 0.8mA 6 0.7mA 5 4 3 2 1 0.3mA 0 0.6mA 0.5mA 0.4mA 40 60 80 100 120 140 160 0 2 4 6 8 10 12 14 16 0.3 1 3 10 30 100 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 105 hFE -- IC 104 Cob -- VCB Collector output capacitance Cob (pF) VCE=5V IE=0 f=1MHz TC=25C 103 Base to emitter saturation voltage VBE(sat) (V) IC/IB=1000 30 10 3 1 0.3 0.1 0.03 0.01 0.1 Forward current transfer ratio hFE 104 TC=-25C 25C 125C TC=125C 103 -25C 102 25C 102 10 0.3 1 3 10 30 100 10 0.03 0.1 0.3 1 3 10 30 1 0.1 0.3 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) ton, tstg, tf -- IC 100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (-IB1=IB2) VCC=50V TC=25C tstg 3 ton 1 tf 0.3 0.1 0.03 0.01 0 2 4 6 8 10 12 Area of safe operation (ASO) 100 30 ICP Non repetitive pulse TC=25C Switching time ton,tstg,tf (s) Collector current IC (A) 10 10 3 1 0.3 0.1 0.03 0.01 1 3 IC t=1ms 10ms DC 10 30 100 300 1000 Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) -- t 104 (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink 2SD2222 Thermal resistance Rth(t) (C/W) 103 102 (1) 10 (2) 0 10-1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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