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DISCRETE SEMICONDUCTORS
DATA SHEET
BFR92 NPN 5 GHz wideband transistor
Product specification File under Discrete Semiconductors, SC14 September 1995
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
DESCRIPTION NPN transistor in a plastic SOT23 envelope primarily intended for use in RF wideband amplifiers and oscillators. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. PNP complement is BFT92. PINNING PIN 1 2 3 DESCRIPTION Code: P1p base emitter collector
1 Top view
fpage
BFR92
3
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot fT Cre GUM F Vo PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation transition frequency feedback capacitance maximum unilateral power gain noise figure output voltage up to Ts = 95 C; note 1 IC = 14 mA; VCE = 10 V; f = 500 MHz; Tj = 25 C IC = 2 mA; VCE = 10 V; f = 1 MHz IC = 14 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C IC = 2 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C; Zs = opt. dim = -60 dB; IC = 14 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C; f(p+q-r) = 493.25 MHz open base CONDITIONS open emitter TYP. - - - - 5 0.4 18 2.4 150 MAX. 20 15 25 300 - - - - - UNIT V V mA mW GHz pF dB dB mV
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Ts = 95 C; note 1 open base open collector CONDITIONS open emitter MIN. - - - - - -65 - MAX. 20 15 2 25 300 150 175 UNIT V V V mA mW C C
September 1995
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE fT Cc Ce Cre GUM F Vo Notes PARAMETER collector cut-off current DC current gain transition frequency collector capacitance emitter capacitance feedback capacitance maximum unilateral power gain (note 1) CONDITIONS IE = 0; VCB = 10 V IC = 14 mA; VCE = 10 V IC = 14 mA; VCE = 10 V; f = 500 MHz IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 2 mA; VCE = 10 V; f = 1 MHz; Tamb = 25 C IC = 14 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C MIN. - 40 - - - - - - - TYP. - 90 5 0.75 0.8 0.4 18 2.4 150
2
BFR92
PARAMETER thermal resistance from junction to soldering point
CONDITIONS up to Ts = 95 C; note 1
THERMAL RESISTANCE 260 K/W
MAX. 50 - - - - - - - -
UNIT nA GHz pF pF pF dB dB mV
noise figure (see Fig.2 and note 2) IC = 2 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C; Zs = opt. output voltage note 3
S 21 - 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log ------------------------------------------------------------- dB 2 2 1 - S 11 1 - S 22 2. Crystal mounted in a SOT37 envelope (BFR90).
3. dim = -60 dB (DIN 45004B); IC = 14 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C; Vp = Vo at dim = -60 dB; fp = 495.25 MHz; Vq = Vo -6 dB; fq = 503.25 MHz; Vr = Vo -6 dB; fr = 505.25 MHz; measured at f(p+q-r) = 493.25 MHz.
September 1995
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92
MEA425 - 1
400 handbook, halfpage
handbook, halfpage
24 V 390 L3 820 3.9 k 300 L2 L1 680 pF 650 pF
P tot (mW) 300
200 75 output 100
75 input
680 pF DUT 16
MEA446
0 0 50 100 150 Ts ( o C) 200
L2 = L3 = 5 H Ferroxcube choke, catalogue number 3122 108 20150. L1 = 4 turns 0.35 mm copper wire; winding pitch 1 mm; internal diameter 4 mm.
Fig.2 Intermodulation distortion test circuit.
Fig.3 Power derating curve.
handbook, halfpage
120
MCD074
MEA428
handbook, halfpage
1
Cc (pF)
h FE 80
0.8
0.6
0.4 40 0.2
0 0 10 20 I C (mA) 30
0 0 10 V CB (V) 20
VCE = 10 V; Tj = 25 C.
IE = ie = 0; f = 1 MHz; Tj = 25 C.
Fig.4
DC current gain as a function of collector current.
Fig.5
Collector capacitance as a function of collector-base voltage.
September 1995
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92
MEA444
MEA427
handbook, halfpage
6
handbook, halfpage
30
fT (GHz) 4
gain (dB) 20
G UM 2 10 I S12 I 2
0 0 10 20 I C (mA) 30
0 2 10
10 3
f (MHz)
104
VCE = 10 V; f = 500 MHz; Tj = 25 C.
IC = 14 mA; VCE = 10 V; Tamb = 25 C.
Fig.6
Transition frequency as a function of collector current.
Fig.7 Gain as a function of frequency.
handbook, halfpage
6
MEA465
MEA424
F (dB)
handbook, halfpage
5
5
F (dB) 4
4 3 3 2 2 1
1
0 10 -1
1
f (GHz)
0 10 0 5 10 15 I C (mA) 20
IC = 2 mA; VCE = 10 V; Tamb = 25 C; Zs = opt.
VCE = 10 V; f = 500 MHz; Tamb = 25 C; Zs = opt.
Fig.8
Minimum noise figure as a function of frequency.
Fig.9
Minimum noise figure as a function of collector current.
September 1995
5
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92
MEA426
handbook, halfpage
40 BS (mS) 20 F = 5 dB 4.5 0 3 2.4 20 3.5 4
40 0 20 40 60 80 100 G S (mS)
IC = 2 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C.
Fig.10 Noise circle figure.
September 1995
6
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92
handbook, full pagewidth
1 0.5 2
0.2
5 10
+j 0 -j 0.2 0.5 1 2 5 10 1000 MHz 800 500 200 5
10
0.2
0.5 1 IC = 14 mA; VCE = 10 V; Tamb = 25 C. Zo = 50 .
2
MEA429
Fig.11 Common emitter input reflection coefficient (S11).
handbook, full pagewidth
90 120 60
150
200 30
500 800 180 1000 MHz 20 12 4 0
+ -
150
30
120 90 IC = 14 mA; VCE = 10 V; Tamb = 25 C.
60
MEA431
Fig.12 Common emitter forward transmission coefficient (S21).
September 1995
7
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92
handbook, full pagewidth
90 120 1000 MHz 150 500 200 180 0.05 0.10 0.15 0 800 60
30
+ -
150
30
120 IC = 14 mA; VCE = 10 V; Tamb = 25 C. 90
60
MEA432
Fig.13 Common emitter reverse transmission coefficient (S12).
handbook, full pagewidth
1 0.5 2
0.2
5 10
+j 0 -j 800 500 0.2 1000 MHz 200 5 10 0.2 0.5 1 2 5 10
0.5 1 IC = 14 mA; VCE = 10 V; Tamb = 25 C. Zo = 50 .
2
MEA430
Fig.14 Common emitter output reflection coefficient (S22).
September 1995
8
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
BFR92
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
September 1995
9
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BFR92
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1995
10

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