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| Silizium-PIN-Fotodiode mit Tageslichtsperrfilter NEU: in SMT Silicon PIN Photodiode with Daylight Filter NEW: in SMT BP 104 F BP 104 FS 0.6 0.4 1.2 0.7 0.8 0.6 Cathode marking 4.0 3.7 5.4 4.9 4.5 4.3 Chip position 0.6 0.4 2.2 1.9 0.6 0.4 0.8 0.6 0.5 0.3 0.35 0.2 0.6 0.4 0 ... 5 5.08 mm spacing Photosensitive area 2.20 mm x 2.20 mm GEO06075 1.6 1.2 Approx. weight 0.1 g Chip position 1.1 0.9 1.2 1.1 0.3 0...0.1 6.7 6.2 4.5 4.3 0.9 0.7 4.0 3.7 1.7 1.5 1.6 1.2 0...5 0.2 0.1 3.5 3.0 Photosensitive area 2.20 mm x 2.20 mm Cathode lead GEO06861 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Semiconductor Group 1 1997-11-19 feo06861 feo06075 BP 104 F BP 104 FS Wesentliche Merkmale q Speziell geeignet fur Anwendungen bei 950 nm q kurze Schaltzeit (typ. 20 ns) q DIL-Plastikbauform mit hoher Packungsdichte q BP 104 FS: geeignet fur Vapor-Phase Loten und IR-Reflow Loten Anwendungen q IR-Fernsteuerung von Fernseh- und Features q Especially suitable for applications of 950 nm q Short switching time (typ. 20 ns) q DIL plastic package with high packing density q BP 104 FS: suitable for vapor-phase and IR-reflow soldering Applications q IR remote control of hi-fi and TV sets, Rundfunkgeraten, Videorecordern, Lichtdimmern, Geratefernsteuerungen q Lichtschranken fur Gleich- und Wechsellichtbetrieb video tape recorders, dimmers, remote controls of various equipment q Photointerrupters Typ (*vorher) Type (*formerly) BP 104 F (*BP 104 ) BP 104 FS Grenzwerte Maximum Ratings Bezeichnung Description Bestellnummer Ordering Code Q62702-P84 Q62702-P1646 Symbol Symbol Wert Value - 40 ... + 85 20 150 Einheit Unit C V mW Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 C Top; Tstg VR Ptot Semiconductor Group 2 1997-11-19 BP 104 F BP 104 FS Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Description Fotoempfindlichkeit Spectral sensitivity VR = 5 V, Ee = 1 mW/cm2 Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit Symbol Symbol Wert Value 34 ( 25) Einheit Unit A S S max 950 780 ... 1100 nm nm S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Dunkelstrom, VR = 10 V Dark current Spektrale Fotoempfindlichkeit Spectral sensitivity Quantenausbeute Quantum yield Leerlaufspannung, Ee = 0.5 mW/cm2 Open-circuit voltage Kurzschlustrom, Ee = 0.5 mW/cm2 Short-circuit current Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 ; VR = 5 V; = 850 nm; Ip = 800 A Durchlaspannung, IF = 100 mA, E = 0 Forward voltage Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance A LxB LxW H 4.84 2.20 x 2.20 mm2 mm x mm 0.5 mm 0.3 (BP 104 FS) 60 2 ( 30) 0.70 0.90 330 ( 250) 17 20 Grad deg. nA A/W Electrons Photon mV A ns IR S VO ISC tr, tf VF C0 1.3 48 V pF Semiconductor Group 3 1997-11-19 BP 104 F BP 104 FS Kennwerte (TA = 25 C, = 950 nm) Characteristics (cont'd) Bezeichnung Description Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V Nachweisgrenze, VR = 10 V Detection limit Symbol Symbol Wert Value - 2.6 0.18 3.6 x 10-14 Einheit Unit mV/K %/K W Hz cm * Hz W TCV TCI NEP D* 6.1 x 1012 Semiconductor Group 4 1997-11-19 BP 104 F BP 104 FS Relative spectral sensitivity Srel = f () 100 OHF00368 Photocurrent IP = f (Ee), VR = 5 V Open-circuit voltage VO = f (Ee) 10 3 OHF01056 Total power dissipation Ptot = f (TA) 10 4 mV S rel % 80 P A VO 10 3 160 mW Ptot 140 120 100 OHF00958 10 2 VO 60 10 1 10 2 80 60 40 10 0 P 10 1 40 20 20 0 700 800 900 1000 nm 1200 10 -1 10 0 10 1 10 2 W/cm2 Ee 10 0 10 4 0 0 20 40 60 80 C 100 TA Dark current IR = f (VR), E = 0 8000 pA 6000 OHFD1781 Capacitance C = f (VR), f = 1 MHz, E = 0 60 OHF01778 Dark current IR = f (TA), VR = 10 V, E = 0 10 3 OHF00082 C pF 50 R nA 10 2 R 40 10 1 4000 30 20 2000 10 0 10 10 -1 0 0 10 20 30 V 40 0 -2 10 10 -1 10 0 VR 10 1 V 10 2 VR 0 20 40 60 80 C 100 TA Directional characteristics Srel = f () 40 30 20 10 0 1.0 OHF01402 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Semiconductor Group 5 1997-11-19 |
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