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INTEGRATED CIRCUITS
SA3600 Low voltage dual-band RF front-end
Product specification Supersedes data of 1999 March 18 1999 Nov 02
Philips Semiconductors
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
DESCRIPTION
The SA3600 is an integrated dual-band RF front-end that operates at both cellular (AMPS and TDMA) and PCS (TDMA) frequencies, and is designed in a 20 GHz fT BiCMOS process--QUBiC2. The low-band (LB) receiver is a combined low-noise amplifier (LNA) and mixer. The LNA has a 1.7 dB noise figure (NF) at 881 MHz with 17 dB of gain and an IIP3 of -7 dBm. The wide-dynamic range mixer has a 9.5 dB NF at 881 MHz with 9.5 dB of gain and an IIP3 of +6 dBm. The high-band (HB) receiver is a combined low-noise amplifier (LNA) and mixer, with the low-band and high-band mixers sharing the same mixer output. The LNA has a 2.2 dB NF at 1960 MHz with 16 dB of gain and an IIP3 of -5 dBm. The wide-dynamic range mixer has a 8.5 dB NF at 1960 MHz with 8.5 dB of gain and an IIP3 of +5.5 dBm.
APPLICATIONS
* 800 to 1000 MHz analog and digital receivers * 1800 to 2000 MHz digital receivers * Portable radios * Mobile communications equipment
PIN CONFIGURATION
HB_LNA_OUT 1 GND 2 HB_LNA_IN 3 VCC 4 24 LB_LNA_OUT 23 GND 22 LB_LNA_IN 21 VCC 20 LB_MXR_IN 19 GND 18 MXR+_OUT 17 MXR-_OUT 16 GND 15 LB_VCO_IN 14 PD3 13 HB_VCO_IN
FEATURES
HB_MXR+_IN 5 HB_MXR-_IN 6 PD1 7 GND 8 HB_VCO_OUT 9 PD2 10 GND 11 LB_VCO_OUT 12
* Low current consumption: LB ICC = 14.5 mA; HB ICC = 20.5 mA * Outstanding low- and high-band noise figure * LNAs with gain control (30 dB gain step) * LO input and output buffers * Selectable frequency doubler * On chip logic for network selection and power down * Very small outline package
ORDERING INFORMATION
TYPE NUMBER SA3600
SR01596
PACKAGE NAME TSSOP24 DESCRIPTION Plastic thin shrink small outline package; 24 leads; body width 4.4 mm VERSION SOT355-1
PIN DESCRIPTIONS
PIN NO. 1 2 3 4 5 6 7 8 9 10 11 12 PIN NAME HB_LNA_OUT GND HB_LNA_IN Vcc HB_MXR+_IN HB_MXR-_IN PD1 GND HB_VCO_OUT PD2 GND LB_VCO_OUT Ground Highband LNA input Power supply Highband mixer positive input Highband mixer negative input Power down control 1 Ground Highband VCO buffered output Power down control 2 Ground Lowband VCO buffered output DESCRIPTION Highband LNA output PIN NO. 13 14 15 16 17 18 19 20 21 22 23 24 PIN NAME HB_VCO_IN PD3 LB_VCO_IN GND MXR-_OUT MXR+_OUT GND LB_MXR_IN VCC LB_LNA_IN GND LB_LNA_OUT DESCRIPTION Highband VCO input Power down control 3 Lowband VCO input Ground Mixer negative output Mixer positive output Ground Lowband mixer input Power supply Lowband LNA input Ground Lowband LNA output
1999 Nov 02
2
853-2183 22617
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
BLOCK DIAGRAM
HB_LNA_OUT GND HB_LNA_IN VCC HB_MXR+_IN HB_MXR-_IN PD1 GND HB_VCO_OUT 1 2 3 4 5 6 7 8 9 24 LB_LNA_OUT 23 GND 22 LB_LNA_IN 21 VCC 20 LB_MXR_IN 19 GND 18 MXR+_OUT 17 MXR-_OUT 16
SA3600
GND
PD2 10 GND 11 LB_VCO_OUT 12
15 LB_VCO_IN 14 PD3 13 HB_VCO_IN
x2
SR01594
Figure 1.
Block Diagram
MODE SELECT LOGIC
PD1 0 0 0 0 1 1 1 1 PD2 0 0 1 1 0 0 1 1 PD3 0 1 0 1 0 1 0 1 OPERATING MODE Sleep mode Tx mode, LO lowband buffer Rx mode cellular, low gain Rx mode cellular, high gain Rx mode PCS, low gain, x2 Rx mode PCS, high gain, x2 Rx mode PCS, low gain, no x2 Rx mode PCS, high gain, no x2 Cel LNA off off off on off off off off Cel MXR off off on on off off off off PCS LNA off off off off off on off on PCS MXR off off off off on on on on x2 DBL off off off off on on off off LB LO O/P off on on on on on off off HB LO O/P off off off off off off on on
1999 Nov 02
3
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
OPERATION
The SA3600 is a highly integrated dual-band radio frequency (RF) front-end integrated circuit (IC) targeted for TDMA applications. This IC is split into separate low-band (LB) and high-band (HB) receivers. The LB receiver contains a low noise amplifier (LNA) and mixer that are designed to operate in the cellular frequency range (869-894MHz). The HB receiver contains an LNA and mixer that are designed to operate in the PCS frequency range (1930-1990 MHz). The SA3600 also contains a frequency doubler that can drive the HB mixer local oscillator (LO) port, allowing a single-band voltage controlled oscillator (VCO) to be used to drive both mixers. Modes for bypassing the doubler are also provided, in the case where a dual-band VCO is used. The SA3600 has eight modes of operation that control the LNAs, mixers, LO buffers and doubler. The select pins (PD1,2,3) are used to change modes of operation. The internal select logic powers the device down (0,0,0), turns on the LB LO buffer for use in transmit mode (0,0,1), enables cellular receive mode for high and low gain (0,1,X), enables PCS receive mode for high and low gain both without doubler (1,1,X) and with doubler (1,0,X).
High-Band Receive Section
The HB circuit contains a LNA followed by a Gilbert cell mixer with differential inputs. The LNA output uses an internal pull-up inductor to VCC , which eliminates the need for an external pull-up. The mixer IF outputs are differential and are combined with the low-band IF mixer outputs thereby eliminating the need for extra output pins. Similar to the LB LNA, the HB LNA has two gain settings: high gain (16 dB) and low gain (-15 dB).
Control Logic Section
Pins PD1, PD2, and PD3, control the logic functions of the SA3600. The PD1 selects between LB and HB operations. In LB receive mode, the LB LNA is in high gain mode (or on) when PD1,2,3 are (0,1,1). In all other modes, the LB LNA is off. The LB mixer is on when PD1,2,3 are (0,1,X). In all other modes, the LB mixer is off. During transmit mode when PD1,2,3 are (0,0,1), the LB LO buffer is on, enabling use of the LO signal for the transmitter. In HB receive mode, the HB LNA is in high gain mode (or on) when PD1,2,3 are (1,X,1). In all other modes, the HB LNA is off. The HB mixer is on when PD1,2,3 are (1,X,X), and is off in all other modes. The on-chip frequency doubler (X2) is on in (1,0,X) modes. When the frequency doubler is on, the input signal from the LB LO buffer is doubled in frequency, which can then be used to drive the HB mixer LO port. The frequency doubler can also be bypassed in modes (1,1,X), in which case the HB mixer is driven directly by an external 2 GHz LO signal.
Low-Band Receive Section
The LB circuit contains a LNA followed by a wide dynamic range active mixer. In a typical application circuit, the LNA output uses an external pull-up inductor to VCC and is AC coupled. The mixer IF outputs are differential and are combined with the high-band IF mixer outputs thereby eliminating the need for extra output pins. External inductors and capacitors can be used to convert the differential mixer outputs to single-ended. Furthermore, the LNA provides two gain settings: high gain (17dB) and low gain (-15 dB). The desired gain state can be selected by setting the logic pins (PD1,PD2,PD3) appropriately.
Local Oscillator (LO) Section
The LB LO buffers are on for all modes except sleep mode, when PD1,2,3 are (0,0,0), and for HB receive mode without doubler, PD1,2,3 are (1,1,X). The HB LO buffers are on only when PD1,2,3 are (1,1,X). The PD1,2,3 pins are used to power-up/down all LO input buffers, which minimizes the pulling effect on the external VCO when entering receive or transmit mode.
1999 Nov 02
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Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
ABSOLUTE MAXIMUM RATINGS1
SYMBOL VCC VIN PD TJ MAX PMAX IMAX TSTG Supply voltage Voltage applied to any other pin Power dissipation, Tamb = +25 C (still air) Maximum junction temperature Power input/output DC current into any I/O pin Storage temperature range -10 -65 -40 PARAMETER LIMITS MIN. -0.3 -0.3 MAX. +4.5 VCC+0.3 555 150 +20 +10 +150 +85 UNITS V V mW C dBm mA C C
TO Operating temperature NOTES: 1. IC is protected against ESD voltages up to 500 V (human body model).
DC ELECTRICAL CHARACTERISTICS
Unless otherwise specified, all Input/Output ports are single-ended.
DC PARAMETERS
VCC = +3.0 V, Tamb = +25C unless otherwise specified SYMBOL Sleep mode Tx mode, LO lowband buffer Rx mode cellular, low gain ICC Rx mode cellular, high gain Rx mode PCS, low gain, x2 Rx mode PCS, high gain, x2 Rx mode PCS, low gain, no x2 Rx mode PCS, high gain, no x2 VIH VIL IBIAS Input HIGH voltage Input LOW voltage Input bias current Logic 1 or logic 0 PARAMETER TEST CONDITIONS PD1 0 0 0 0 1 1 1 1 PD2 0 0 1 1 0 0 1 1 PD3 0 1 0 1 0 1 0 1 0.5xVCC -0.3 -5 MIN TESTER LIMITS TYP 0.1 4.3 10.1 14 17.5 23.5 14.5 20.5 MAX 1 5.5 12 16.5 21 28 17.5 24.5 VCC+0.3 0.2xVCC +5 UNIT A mA mA mA mA mA mA mA V V A
1999 Nov 02
5
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
AC ELECTRICAL CHARACTERISTICS
VCC = +3.0 V, fRF = 881 MHz, fLO = 963 MHz, Tamb = +25C, unless otherwise specified SYMBOL PARAMETER TEST CONDITIONS LIMITS MIN. 20.5 -11.5 869 16.1 1.5 -8.1 17 1.7 -7 -20 -15 15 15 50 system 50 system 10 10 20 869 70 939 PLO = -5 dBm PLO = -5 dBm PLO = -5 dBm PLO = -5 dBm -7 50 system 50 system PLO = -5 dBm fRF=890.0 MHz @-36 dBm fTx=848.9 MHz @-20 dBm fRF=876.3 MHz @-36 dBm fTx=848.9 MHz @-20 dBm -110 -110 25 40 20 939 50 matched LB_VCO_IN 50 matched LB_VCO_OUT 50 system 50 system PLO = -5 dBm -7 -8 -5 -7.5 10 10 -20 20 -7 1100 -3 dB dB s MHz dBm dBm dB dB dBc s dBm 9 8.6 5.1 9.5 9.5 6 -14 -5 10 10 -3 10 10.4 6.9 894 200 1100 17.9 1.9 -5.9 -3 TYP 23.5 -8.5 +3 MAX. 26.5 -5.5 894 UNIT
Cascaded Gain Section GSYS GBYP fRF GENA NFENA IIP3ENA P1dBENA GBYP NFBYP IIP3BYP ZIN ZOUT TSW fRF fIF fLO GMXR NFMXR IIP3MXR P1dBMXR PLO ZIN ZOUT LB LNA + Mixer, High Gain LB LNA + Mixer, Low Gain RF input frequency range Small signal gain ENABLED Noise figure ENABLED Input 3rd order Intercept Point Input 1 dB Compression Point Small signal gain BYPASSED Noise figure BYPASSED Input 3rd order Intercept Point Input return loss2 Output return loss2 ENABLE/DISABLE speed1 RF input frequency range IF output frequency range LO input range Small signal gain SSB Noise figure Input 3rd order Intercept Point Input 1 dB Compression Point LO input power range Input return loss2 Output return loss2 Two-tone spurious rejection: 2-Tone 2(fRF-fTx), fRF-fTx=fIF/2 3(fRF-fTx), fRF-fTx=fIF/3 RF-LO LO-RF TSW PLO PIN POUT ZIN ZOUT TSW RF to LO isolation LO to RF isolation ENABLE/DISABLE speed1 LO Input frequency range LO Input power LO Output power Input return loss2 Output return loss2 Harmonic content ENABLE/DISABLE speed1 Filter loss = 3 dB Filter loss = 3 dB dB dB MHz dB dB dBm dBm dB dB dBm dB dB s MHz MHz MHz dB dB dBm dBm dBm dB dB
Low-band LNA Section
Low-band Mixer Section
Low-band LO Buffer Section
1999 Nov 02
6
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
AC ELECTRICAL CHARACTERISTICS
VCC = +3.0 V, fRF = 1960 MHz, fLO = 2042 MHz, Tamb = +25C, unless otherwise specified SYMBOL Cascaded Gain Section GSYS GBYP fRF GENA NFENA IIP3ENA P1dBENA GBYP NFBYP IIP3BYP ZIN ZOUT TSW fRF fIF fLO GMXR NFMXR IIP3MXR P1dBMXR HB LNA + Mixer, High Gain HB LNA + Mixer, Low Gain RF input frequency range Small signal gain ENABLED Noise figure ENABLED Input 3rd order Intercept Point Input 1 dB Compression Point Small signal gain BYPASSED Noise figure BYPASSED Input 3rd order Intercept Point Input return loss2 Output return loss ENABLE/DISABLE speed1 1930 70 2000 PLO = -5 dBm PLO = -5 dBm PLO = -5 dBm PLO = -5 dBm PLO = -5 dBm PLO = -5 dBm fRF=1972.0 MHz @-36 dBm fLO=2013.1 MHz @-5 dBm fRF=1985.7 MHz @-36 dBm fLO=2013.1 MHz @-5 dBm PLO = -5 dBm, fRF=1933.0 MHz @-36 dBm fTx=1850.8 MHz @-20 dBm fRF=1951.0 MHz @-36 dBm fTx=1909.9 MHz @-20 dBm fRF=1937.3 MHz @-36 dBm fTx=1909.9 MHz @-20 dBm -7 50 system 50 system -70 -115 -125 -5 10 10 40 30 20 -3 dBm dB dB dB dB s dBm 7.8 7.6 8.1 4 1.9 8.5 8.5 9 5.5 3 -14 -90 dBm -85 -114 dBm 9.2 9.4 9.9 7 4.1 50 system, ENA and BYP 50 system, ENA and BYP Filter loss = 3 dB Filter loss = 3 dB 18.5 -12.5 1930 15 1.9 -6.5 16 2.2 -5 -14 -15 15 15 10 10 20 1990 200 2190 17 2.5 -3.5 21.5 -9.5 24.5 -6.5 1990 dB dB MHz dB dB dBm dBm dB dB dBm dB dB s MHz MHz MHz dB dB dB dBm dBm dBm PARAMETER TEST CONDITIONS LIMITS MIN. -3 TYP +3 MAX. UNIT
High-band LNA Section
High-band Mixer Section RF input frequency range IF output frequency range LO input range Small signal gain SSB Noise figure, doubler off SSB Noise figure, doubler on Input 3rd order Intercept Point, doubler off Input 3rd order Intercept Point, doubler on Input 1 dB Compression Point Half-IF spurious rejection 2(fRF-fLO), fRF-fLO=fIF/2, doubler off Half-IF spurious rejection 2(fRF-fLO), fRF-fLO=fIF/2, doubler on Third-IF spurious rejection 3(fRF-fLO), fRF-fLO=fIF/3 Two-tone spurious rejection: fRF-fTx, fRF-fTx=fIF 2-tone 2(fRF-fTx), fRF-fTx=fIF/2 3(fRF-fTx), fRF-fTx=fIF/3 PLO ZIN ZOUT RF-LO LO-RF TSW LO input power range Input return loss2 Output return loss2 RF to LO isolation LO to RF isolation ENABLE/DISABLE speed1
IF/2 rej rej.
IF/3 rej.
1999 Nov 02
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Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
AC ELECTRICAL CHARACTERISTICS
VCC = +3.0 V, Tamb= +25C, unless otherwise specified SYMBOL PARAMETER TEST CONDITIONS LIMITS MIN. 2000 50 matched HB_VCO_IN 50 matched HB_VCO_OUT 50 system 50 system PLO = -5 dBm -7 -8.8 -5 -8 10 10 -20 20 1000 50 matched LB_VCO_IN 50 system 50 system -7 -5 10 10 20 1095 -3 -7.2 -3 TYP +3 MAX. 2190 -3 UNITS
High-band LO Buffer Section PLO PIN POUT ZIN ZOUT TSW fLO PIN ZIN ZOUT TSW LO Input frequency range LO Input power LO Output power Input return loss2 Output return loss2 Harmonic content ENABLE/DISABLE speed1 LO Input frequency LO Input power Input return loss2 Output return loss2 ENABLE/DISABLE speed1 x2 LO Doubler Section MHz dBm dB dB s MHz dBm dBm dB dB dBc s
NOTES: 1. Dependent on external components. 2. External matching required.
1999 Nov 02
8
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
PIN NO
PIN MNEMONIC
DC V
EQUIVALENT CIRCUIT
VCC
1
HB LNA OUT
SR01786
VBIAS
5K
3
HB LNA IN
0.8
SR01787
VCC
4
VCC
VBIAS
5
HB MXR+ IN
1.2
6
HB MXR- IN
1.2
SR01788
7
PD1
10
PD2
Apply externally
14
PD3
SR01789
VCC
VCC
9
HB VCO OUT
Pull-up externally to VCC
SR01790
1999 Nov 02
9
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
PIN NO
PIN MNEMONIC
DC V
EQUIVALENT CIRCUIT
VCC
12
LB VCO OUT
VCC - 0.2 V
SR01791
VCC
VBIAS
VBIAS
13
HB VCO IN
1.9
SR01792
VCC
15
LB VCO IN
1.0
SR01793
VCC 2 pF
17
MXR- OUT
VCC
Pull-u Pull-up externally to VCC
2 pF
18
MXR+ OUT
SR01794
1999 Nov 02
10
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
PIN NO
PIN MNEMONIC
DC V
EQUIVALENT CIRCUIT
VCC VBIAS
20
LB MXR IN
1.2
SR01795
VCC
VBIAS
5K
22
LB LNA IN
0.8
SR01796
VCC
24
LB LNA OUT
Pull-up externally to VCC
SR01797
1999 Nov 02
11
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
PERFORMANCE CHARACTERISTICS
VCC = +3.0 V, Tamb = +25_C; unless otherwise specified.
0.20 +85 C 0.15 Icc (uA) Icc (mA) +25 C 16.0 15.0 +85 C 14.0 13.0 12.0 11.0 00.0 2.5 3.0 VCC (V) 3.5 4.0 VCC (V) 2.5 3.0 3.5 4.0 +25 C -40 C
0.10 -40 C 0.05
SR02204
SR02201
Figure 2.
ICC versus VCC (mode 000 - sleep mode)
Figure 5.
ICC versus VCC (mode 011 - LB receive, high gain)
5.0 4.8 4.6 Icc (mA) Icc (mA) 4.4 +85 C 4.2 +25 C 4.0 2.5 -40 C 3.0 VCC (V) 3.5 4.0
19.0 18.5 18.0 17.5 17.0 16.5 2.5 3.0 VCC (V) 3.5 4.0
+85 C, +25 C -40 C
SR02202
SR02205
Figure 3.
ICC versus VCC (mode 001 - transmit mode)
Figure 6.
ICC versus VCC (mode 100 - HB receive, low gain, doubler on)
11.0
26.5 25.0
Icc (mA)
10.5 -40 C, +25 C
Icc (mA)
+85 C 23.5 +25 C 22.0 -40 C
10.0
+85 C 9.5 2.5 3.0 VCC (V) 3.5 4.0
20.5 2.5 3.0 VCC (V) 3.5 4.0
SR02203
SR02206
Figure 4.
ICC versus VCC (mode 010 - LB receive, low gain)
Figure 7.
ICC versus VCC (mode 101 - HB receive, high gain, doubler on)
1999 Nov 02
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Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
16.0 15.5 Low gain (dB) Icc (mA)
-13.0 -14.0 -40 C -15.0 +25 C -16.0 +85 C -17.0 -18.0 2.5 3.0 VCC (V) 3.5 4.0 865 870 875 880 885 890 895 900
15.0 +85 C 14.5 -40 C +25 C 14.0
Frequency (MHz)
SR02207
SR02210
Figure 8.
ICC versus VCC (mode 110 - HB receive, low gain, doubler off)
Figure 11.
LB LNA low gain versus frequency
24.0 22.0 Icc (mA)
3.0
2.5 +85 C +25 C -40 C NF (dB) 2.0 +85 C +25 C -40 C
20.0 18.0
1.5
16.0 2.5 3.0 VCC (V) 3.5 4.0
1.0 865 870 875 880 885 890 895 900
Frequency (MHz)
SR02208
SR02211
Figure 9.
ICC versus VCC (mode 111 - HB receive, high gain, doubler off)
Figure 12.
LB LNA noise figure versus frequency (high gain mode)
18.0 17.5 Gain (dB) IIP3 (dBm) -40 C 17.0 +25 C 16.5 +85 C 16.0 865 870 875 880 885 890 895 900
-4.0
-6.0
+85 C +25 C
-8.0 -40 C -10.0 865 870 875 880 885 890 895 900
Frequency (MHz)
Frequency (MHz)
SR02209
SR02212
Figure 10.
LB LNA gain versus frequency
Figure 13.
LB LNA IIP3 versus frequency (high gain mode)
1999 Nov 02
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Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
-12.0 -18.0 Low gain (dB) -13.0 -14.0 -15.0 -16.0 -17.0 -18.0 -22.0 865 870 875 880 885 890 895 900 Frequency (MHz) 1920 Frequency (MHz) 1930 1940 1950 1960 1970 1980 1990 2000 +85 C -40 C +25 C
-19.0 1 dB (dBm) +25 C -20.0 -40 C -21.0 +85 C
SR02213
SR02216
Figure 14.
LB LNA 1 dB compression versus frequency (high gain mode)
Figure 17.
HB LNA low gain versus frequency
-11.0 3.0 -12.0 1 dB (dBm) -13.0 -14.0 -15.0 -40 C -16.0 -17.0 1920 1930 1940 1950 1960 1970 1980 1990 2000 +85 C IIP3 (dBm) 2.5 +25 C +25 C 2.0 -40 C 1.5 1.0 1920 1930 1940 1950 1960 1970 1980 1990 2000 +85 C
Frequency (MHz)
SR02214
Frequency (MHz)
SR02217
Figure 15.
HB LNA 1 dB compression versus frequency (high gain mode)
Figure 18.
HB LNA noise figure versus frequency (high gain mode)
17.0 0.0 16.5 Gain (dB) +25 C 16.0 +85 C 15.5 IIP3 (dBm) -40 C -2.0 +85 C -4.0 +25 C -6.0 -40 C -8.0 15.0 1920 1930 1940 1950 1960 1970 1980 1990 2000 -10.0 1920 1930 1940 1950 1960 1970 1980 1990 2000
Frequency (MHz)
SR02215
Frequency (MHz)
SR02218
Figure 16.
HB LNA gain versus frequency
Figure 19.
HB LNA IIP3 versus frequency (high gain mode)
1999 Nov 02
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Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
11.0 -40 C +25 C 9.0 +85 C 1 dB (dBm) 10.0 Gain (dB)
-12.0 -40 C -13.0 +25 C +85 C
-14.0
8.0
-15.0
7.0 865 870 875 880 885 890 895 900
-16.0 865 870 875 880 885 890 895 900
Frequency (MHz)
Frequency (MHz)
SR02219
SR02222
Figure 20.
LB mixer conversion gain versus frequency
Figure 23.
LB mixer 1 dB compression versus frequency
12.0 11.0 10.0 9.0 -40 C 8.0 7.0 865 870 875 880 885 890 895 900
10.0 -40 C +85 C +25 C Gain (dB) 9.0 +25 C 8.0 +85 C 7.0
NF (dB)
6.0 1920 1930 1940 1950 1960 1970 1980 1990 2000
Frequency (MHz)
Frequency (MHz)
SR02220
SR02224
Figure 21.
LB mixer noise figure versus frequency
Figure 24.
HB mixer conversion gain versus frequency, doubler off
11.0 10.0 -40 C 8.0 IIP3 (dBm) +25 C NF (dB) 6.0 4.0 +85 C 2.0 7.0 0.0 865 870 875 880 Frequency (MHz) 885 890 895 900 1920 1930 1940 1950 1960 1970 1980 1990 2000 9.0 -40 C 8.0 10.0 +85 C +25 C
Frequency (MHz)
SR02221
SR02225
Figure 22.
LB mixer input IP3 versus frequency
Figure 25.
HB mixer noise figure versus frequency, doubler off
1999 Nov 02
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Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
10.0 Half-IF Spur (dBm) 8.0 +25 C IIP3 (dBm) 6.0 +85 C 4.0 -40 C 2.0 0.0 1920 1930 1940 1950 1960 1970 1980 1990 2000
-82.0 -40 C -84.0 +25 C -86.0 +85 C -88.0
-90.0 1920 1930 1940 1950 1960 1970 1980 1990 2000
Frequency (MHz)
Frequency (MHz)
SR02226
SR02228
Figure 26.
HB mixer input IP3 versus frequency, doubler off
Figure 29.
HB mixer half-IF spur versus frequency (input = -36 dBm, doubler on)
-13.0
10.0 -40 C -40 C 9.0 Gain (dB) +25 C
-13.5 1 dB (dBm)
-14.0 +85 C -14.5
+25 C
8.0
7.0
+85 C
-15.0 6.0 1920 1930 1940 1950 1960 1970 1980 1990 2000 1920 1930 1940 1950 1960 1970 1980 1990 2000
Frequency (MHz)
Frequency (MHz)
SR02227
SR02229
Figure 27.
HB mixer 1 dB compression versus frequency, doubler off
Figure 30.
HB mixer conversion gain versus frequency, doubler on
-86.0 -88.0 Half-IF spur (dBm) -90.0 -92.0 -94.0 -96.0 1920 1930 1940 1950 1960 1970 1980 1990 2000
12.0 11.0 NF (dB) 10.0 +25 C 9.0 8.0 7.0 1920 1930 1940 1950 1960 1970 1980 1990 2000 -40 C +85 C
-40 C +25 C
+85 C
Frequency (MHz)
Frequency (MHz)
SR02223
SR02230
Figure 28.
HB mixer half-IF spur versus frequency (input = -36 dBm, doubler off)
Figure 31.
HB mixer noise figure versus frequency, doubler on
1999 Nov 02
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Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
6.0 5.0 +85 C 4.0 IIP3 (dBm) +25 C 3.0 2.0 1.0 0.0 1920 1930 1940 1950 1960 1970 1980 -40 C 1990 2000 Lo output power (dBm)
-5.0 -6.0 -40 C -7.0 +25 C -8.0 +85 C -9.0 -10.0 950 Frequency (MHz) 955 960 965 970 975 980
SR02231
Frequency (MHz)
SR02233
Figure 32.
HB mixer input IP3 versus frequency, doubler on
Figure 34.
LB LO output power versus frequency (mode 010)
30.0 LO output power (dBm) +25 C IIP2 (dBm) 28.0 +85 C 26.0 -40 C 24.0 1920 1930 1940 1950 1960 1970 1980 1990 2000
-6.0 -7.0 -40 C -8.0 +25 C -9.0 +85 C -10.0 -11.0 2010 2020 2030 2040 2050 2060 2070 2080
Frequency (MHz)
SR02232
Frequency (MHz)
SR02234
Figure 33.
HB mixer input IP2 versus frequency, doubler on
Figure 35.
HB LO output power versus frequency (mode 110)
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Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
PMU 10 k 220 pF HB_LNA_OUT 1 24 10 nh LB_LNA_OUT
PMU
220 pF
1.8 pF
PMU RF Source 220 pF 220 pF 10 k
GND
2
23
GND 10 k
12 nh PMU
HB_LNA_IN
3
22
LB_LNA_IN RF Source 6.8 pF 3 dB Pad PMU 0.01 F VCC 100 pF
5.6 nh PMU 3 dB Pad 10 k PMU 100 pF 220 pF 0.01 F 100 pF
VCC 4 HB_MXR+_IN 5 HB_MXR-_IN 6 1 k PD1 0.1 pF 19 20 21
18 nh
LB_MXR_IN 10 k GND PMU 220 pF 10 nh
PMU PMU 10 nh
7
18
MXR+_OUT 8.2 pF 470 nh 470 nh 100 pF RF Meas. 8.2 pF 10 pF 10 k PMU LB_VCO_IN 18 pF
PMU 0.01 F
GND
8
17
MXR-_OUT
100 pF RF Meas.
HB_VCO_OUT
9
16
GND
1 k PMU 0.1 F
PD2
10
15
RF Source 1k 4.7 nh PMU 2.7 pF RF Source PMU 10 k
GND 10 k PMU RF Meas. 100 pF 4.7 nh LB_VCO_OUT
11
14
PD3 0.1 F
12
13
HB_VCO_IN
SR02235
Figure 36.
SA3600 production test circuit schematic
1999 Nov 02
18
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
J1 SMA HBLOUT
R11 000 L19 UL R9 UL
R10 10
C12 1.5pF L18 TOKO 8.2nH R8 330 LBLOUT L16 8.2nH C34 10nF LBLIN R2 10
24 23 22
J6 SMA
J2 SMA HBLIN
C2 100pF C1 0.5pF
R12 000
C13 100pF
J7 SMA
C37 10nF HBLNA_OUT LBLNA_OUT GND LBLNA_IN VCC LBMIX_IN GND MIXER_OUT-P R4 10k L7 180nH C16 100nF L15 22nH C16 100pF
R1 10
1 2 3 4 5 6 7 8 9 10
C3 100nF C6 1.8pF J3 SMA HBMIN C9 100pF L3 2.7nH L4 1.8nH
C4 100pF C5 100pF
GND HBLNA_IN VCC HBMIX_IN-P
C18 1nF LBMIN
J8 SMA
SA3600
21 20 19 18
C33 1pF C28 6.8pF C20 27pF
L2 2.7nH L5 1.8nH C7 1.8pF
L11 UL
L12 UL
HBMIX_IN-N PD1 GND
MIXER_OUT-N 17
16 15
L8 120nH
82MHz IF J9 C22 1nF SMA MIXOUT
C6 100pF PD1
HBVCO_OUT PD2
GND LBVCO_IN PD3 HBVCO_IN C27 6.8pF R3 10k L6 180nH C19 27pF L9 120nH
GND 11 LBVCO_OUT
12
x2
14 13
R7 10 L10 10nH C24 22pF
PD2 J11 SMA C21 100pF C32 8.2pF 0402 C31 8.2pF 0402 C23 100pF
J4 SMA HBLOOUT
C10 5.6pF
Mode Select J5 SMA LBLOOUT C11 1.2pF Sleep mode Tx mode, LO LB Buffer Rx mode cell, LO Gain Rx mode cell, HI Gain Rx mode PCS, LO Gain X2 Rx mode PCS, HI Gain X2 Rx mode PCS, LO Gain No X2 Rx mode PCS, HI Gain No X2 PD3 VCC GND
PD1 PD2 PD3 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1
L13 2.7nH
J10 SMA C30 2.2pF
J12 VCC
R6 10
C26 100nF
C25 100pF
C38 100pF
SR02236
Figure 37.
SA3600 Application circuit (fIF = 82 MHz)
1999 Nov 02
19
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
Table 1. Low-band LNA S-parameters (high gain mode)
Freq (MHz) 800 810 820 830 840 850 860 870 880 890 900 910 920 930 940 950 960 970 980 990 1000 1010 1020 1030 1040 1050 |S11| (U) 0.42 0.42 0.41 0.41 0.41 0.41 0.40 0.40 0.40 0.39 0.39 0.39 0.38 0.38 0.38 0.37 0.37 0.37 0.36 0.36 0.36 0.36 0.36 0.36 0.35 0.35 1999 Nov 02
20
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
Table 2. Low-band LO input (pin 15) and output (pin 12) S-parameters
Freq(MHz) 670 680 690 700 710 720 730 740 750 760 770 780 790 800 810 820 830 840 850 860 870 880 890 900 910 920 930 940 950 960 970 980 990 1000 1010 1020 1030 1040 1050 1060 |S11| (U) 0.37 0.37 0.35 0.33 0.32 0.31 0.30 0.28 0.27 0.26 0.25 0.24 0.23 0.22 0.21 0.20 0.20 0.21 0.21 0.20 0.21 0.22 0.23 0.24 0.25 0.26 0.27 0.29 0.30 0.31 0.32 0.34 0.35 0.37 0.38 0.39 0.41 0.42 0.43 0.44 1999 Nov 02
21
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
Table 2. Low-band LO input (pin 15) and output (pin 12) S-parameters (continued)
Freq(MHz) 1070 1080 1090 1100 1110 1120 1130 1140 1150 1160 1170 |S11| (U) 0.46 0.48 0.49 0.51 0.52 0.53 0.53 0.54 0.55 0.56 0.57 1999 Nov 02
22
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
Table 3. Mixer output S-parameters
Both pins (17, 18) Freq(MHz) 70 80 90 100 110 120 130 140 150 160 170 180 190 200 |S11| (U) 1.00 1.00 0.99 0.99 0.99 0.99 0.99 0.99 0.99 0.99 0.99 0.99 0.99 0.99 1999 Nov 02
23
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
Table 4. Low-band mixer input S-parameters
Freq(MHz) 800 810 820 830 840 850 860 870 880 890 900 910 920 930 940 950 960 970 980 990 1000 1010 1020 1030 1040 1050 |S11| (U) 0.84 0.85 0.85 0.85 0.84 0.85 0.85 0.84 0.85 0.85 0.84 0.85 0.84 0.85 0.85 0.85 0.85 0.84 0.85 0.84 0.84 0.85 0.84 0.85 0.84 0.85 1999 Nov 02
24
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
Table 5. High-band LNA S-parameters
Freq (MHz) 1800 1810 1820 1830 1840 1850 1860 1870 1880 1890 1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000 2010 2020 2030 2040 2050 |S11| (U) 0.38 0.37 0.37 0.37 0.36 0.36 0.35 0.35 0.34 0.33 0.33 0.33 0.32 0.32 0.32 0.32 0.32 0.32 0.31 0.32 0.31 0.31 0.31 0.31 0.31 0.31 1999 Nov 02
25
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
Table 6. High-band LO input (pin 13) and output (pin 9) S-parameters
Freq(MHz) 1700 1710 1720 1730 1740 1750 1760 1770 1780 1790 1800 1810 1820 1830 1840 1850 1860 1870 1880 1890 1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000 2010 2020 2030 2040 2050 2060 2070 2080 2090 |S11| (U) 0.82 0.82 0.82 0.82 0.82 0.83 0.82 0.82 0.82 0.83 0.82 0.82 0.83 0.82 0.82 0.82 0.82 0.82 0.82 0.82 0.82 0.81 0.82 0.81 0.81 0.81 0.81 0.80 0.80 0.80 0.80 0.80 0.80 0.80 0.79 0.79 0.79 0.79 0.78 0.77 1999 Nov 02
26
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
Table 6. High-band LO input (pin 13) and output (pin 9) S-parameters (continued)
Freq(MHz) 2100 2110 2120 2130 2140 2150 2160 2170 2180 2190 2200 |S11| (U) 0.78 0.77 0.77 0.77 0.76 0.77 0.76 0.76 0.76 0.76 0.76 1999 Nov 02
27
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
TSSOP24: plastic thin shrink small outline package; 24 leads; body width 4.4 mm
SOT355-1
1999 Nov 02
28
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
NOTES
1999 Nov 02
29
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
Data sheet status
Data sheet status Objective specification Preliminary specification Product specification Product status Development Qualification Definition [1] This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Production
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Disclaimers
Life support -- These products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088-3409 Telephone 800-234-7381 (c) Copyright Philips Electronics North America Corporation 1999 All rights reserved. Printed in U.S.A. Date of release: 11-99 Document order number: 9397-750-06558
Philips Semiconductors
1999 Nov 02 30

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