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Provisional Data Sheet No. PD 6.069A
FULLY PROTECTED DMOS POWER SWITCH
Features
s s s s s s s s s
IRSF3031
50 V 200 m 1.8 A 165oC 200 mJ
Extremely Rugged for Harsh Operating Environments Over Temperature Protection Over Current Protection Active Drain-to-Source Clamp ESD Protection Compatible with Standard Power MOSFET Low Operating Input Current Monolithic Construction Dual Set/Reset Threshold Input
Vds(clamp) Rds(on) I ds(sd) T j(sd) EAS Applications
s s
Description
The IRSF3031 is a three-terminal monolithic SMART POWER MOSFET with built-in short circuit, over-temperature, ESD and over-voltage protections and dual set/reset threshold input. The on-chip protection circuit latches off the power MOSFET in case the drain current exceeds 4A (typical) or the junction temperature exceeds 165C (typical) and keeps it off until the input is driven below the Reset Threshold voltage. The drain-to-source voltage is actively clamped at 55V (typical) prior to the avalanche of the power MOSFET, thus improving its performance during turn-off with inductive loads. The input requirements are very low (100A typical) which makes the IRSF3031 compatible with most existing designs based on standard power MOSFETs.
Solenoid Driver DC Motor Driver
Available Packages
IRSF3031 (TO-220AB) IRSF3031L (SOT-223)
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (Tc = 25C unless otherwise specified.)
Minimum Maximum
Vds, max Vin, max Ids Pd E AS Vesd1 Vesd2 TJop TStg TL Continuous Drain to Source Voltage Continuous Input Voltage Continuous Drain Current Power Dissipation Unclamped Single Pulse Inductive Energy Electrostatic Discharge Voltage (Human Body Model) Electrostatic Discharge Voltage (Machine Model) Operating Junction Temperature Range Storage Temperature Range Lead Temperature (Soldering, 10 seconds) 0 -40 -40 50 8
self limited
Units
V
Test Conditions
30 200 4000 1000 150 150 300
W mJ V
Tc 25C 1000pF. 1.5k 200pF, 0
C
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IRSF3031
Static Electrical Characteristics
(Tc = 25C unless otherwise specified.)
Minimum Typical Maximum Units
V ds,clamp R ds(on) I dss V set V reset I i,on I i,off V in, clamp V sd Drain to Source Clamp Voltage Drain to Source On Resistance Drain to Source Leakage Current Input Threshold Voltage Input Protection Reset Threshold Voltage Input Supply Current (Normal Operation) Input Supply Current (Protection Mode) Input Clamp Voltage Body-Drain Diode Forward Drop 50 2.5 0.5 9 56 155 3.2 1.0 100 120 10 1.5 65 200 250 4.0 1.5 300 400 V m A V V A A V V
Test Conditions
Ids = 2A Vin = 5V, Ids = 2A Vds = 40V, Vin = 0V Vds = 5V, Ids > 10mA Vds = 5V, Ids < 10A Vin = 5V Vin = 5V Iin = 10mA Ids = -2A, Rin = 1k
Thermal Characteristics
Minimum Typical Maximum Units
Rjc RjA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 4 62 C/W
Test Conditions
Switching ElectricalCharacteristics
(VCC = 14V, Resistive Load (RL) = 10, R in= 100. Typical specifications measured at TC= 25C. Min/max specifications are for TC = -40C to TC =125C unless otherwise specified.)
Minimum Typical Maximum Units
-5 -5 30 30 30 30 5 5 s
Test Conditions
t don tr t doff tf SR SR
Turn-On Delay Rise Time Turn-Off Delay Fall Time Output Positive Output Positive
Time Time Slew Rate Slew Rate
V/s
Vin = 2V to 5V, 50% to 90% Vin = 2V to 5V, 90% to 10% Vin = 2V to 5V, 50% to 10% Vin = 2V to 5V, 10% to 90% Vin = 2V to 5V, +dVds/dt Vin = 2V to 5V, -dVds/dt
Protection Characteristics
(TC= 25 C unless otherwise specified. Min/Max specifications are for TC= -40C to TC = +125C unless otherwise specified.)
Minimum Typical Maximum Units
Ids(sd) Tj(sd) Vprotect tIresp Ipeak treset tTresp Current Limit Over Temperature Shutdown Threshold Min. Input Voltage for Over-temp function Over Current Response Time Peak Short Circuit Current Protection Reset Time Over-Temperature Response Time 1.8 155 4 165 3 TBD TBD TBD TBD 6 A C V s A s
Test Conditions
Vin = 5V Vin = 5V, Ids = 2A
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IRSF3031
Block Diagram
Input Drain
Source
Case Outline SOT-223 (IRSF3031L)
MILLIMETERS MIN MAX 1.55 1.80 0.65 0.85 2.95 3.15 0.25 0.35 6.30 6.70 3.30 3.70 2.30 BSC 4.60 BSC 6.71 7.29 -- 0.91 0.02 0.10 10 MAX INCHES MIN MAX 0.061 0.071 0.026 0.033 0.116 0.124 0.010 0.014 0.248 0.264 0.130 0.146 .0905 BSC 0.181 BSC 0.287 0.264 -- 0.036 0.0006 0.004 10 MAX
DIM A B B1 C D E e e1 H L L1
NOTES: 1. Dimensioning and tolerancing per ANSI Y14.5M, 1982 2. Controlling dimension: INCH 3. Dimensions do not include lead flash 4. Conforms to JEDEC outline TO-261AA
LEAD ASSIGNMENTS 1. Gate 2. Drain 3. Source 4. Drain
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IRSF3031
Tape and Reel SOT-223 (IRSF3031L)
NOTES: 1. Controlling dimension: MILLIMETER 2. Conforms to outline EIA-481 and EIA-541 3. Each 330.00 (13.00) reel contains 2,500 devices.
NOTES: 1. Controlling dimension: MILLIMETER 2. Conforms to outline EIA-481-1 3. Dimension measured at hub 4. Includes flange distortion at outer edge
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IRSF3031
Case Outline TO-220AB (IRSF3031)
NOTES: 1. Dimensioning and tolerancing per ANSI Y14.5M, 1982 2. Controlling dimension: INCH 3. Dimensions shown are in millimeters (inches) 4. Conforms to JEDEC outline TO-251AA 5. Dimension does not include solder dip. Solder dip max. +0.16 (.006)
LEAD ASSIGNMENTS 1. Gate 2. Drain 3. Source 4. Drain
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 9/96
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