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ICs for Communications
Mixer DC - 2.5GHz and Vector Modulator 0.8 - 1.5GHz PMB 2201 Version 1.2
Preliminary Data Sheet 08.97
Edition 08.97 Published by Siemens AG, Bereich Halbleiter, MarketingKommunikation, Balanstrae 73, 81541 Munchen (c) Siemens AG 1995. All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components1 of the Semiconductor Group of Siemens AG, may only be used in life-support devices or systems2 with the express written approval of the Semiconductor Group of Siemens AG. 1 A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
Ausgabe 08.97 Herausgegeben von Siemens AG, Bereich Halbleiter, MarketingKommunikation, Balanstrae 73, 81541 Munchen (c) Siemens AG 1995. Alle Rechte vorbehalten. Wichtige Hinweise! Gewahr fur die Freiheit von Rechten Dritter leisten wir nur fur Bauelemente selbst, nicht fur Anwendungen, Verfahren und fur die in Bauelementen oder Baugruppen realisierten Schaltungen. Mit den Angaben werden die Bauelemente spezifiziert, nicht Eigenschaften zugesichert. Liefermoglichkeiten und technische Anderungen vorbehalten. Fragen uber Technik, Preise und Liefermoglichkeiten richten Sie bitte an den Ihnen nachstgelegenen Vertrieb Halbleiter in Deutschland oder an unsere Landesgesellschaften im Ausland. Bauelemente konnen aufgrund technischer Erfordernisse Gefahrstoffe enthalten. Auskunfte daruber bitten wir unter Angabe des betreffenden Typs ebenfalls uber den Vertrieb Halbleiter einzuholen. Die Siemens AG ist ein Hersteller von CECCqualifizierten Produkten. Verpackung Bitte benutzen Sie die Ihnen bekannten Verwerter. Wir helfen Ihnen auch weiter - wenden Sie sich an Ihren fur Sie zustandigen Vertrieb Halbleiter. Nach Rucksprache nehmen wir Verpackungsmaterial sortiert zuruck. Die Transportkosten mussen Sie tragen. Fur Verpackungsmaterial, das unsortiert an uns zuruckgeliefert wird oder fur das wir keine Rucknahmepflicht haben, mussen wir Ihnen die anfallenden Kosten in Rechnung stellen. Bausteine in lebenserhaltenden Geraten oder Systemen mussen ausdrucklich dafur zugelassen sein! Kritische Bauelemente1 des Bereichs Halbleiter der Siemens AG durfen nur mit ausdrucklicher schriftlicher Genehmigung des Bereichs Halbleiter der Siemens AG in lebenserhaltenden Geraten oder Systemen2 eingesetzt werden. 1 Ein kritisches Bauelement ist ein in einem lebenserhaltenden Gerat oder System eingesetztes Bauelement, bei dessen Ausfall berechtigter Grund zur Annahme besteht, da das lebenserhaltende Gerat oder System ausfallt bzw. dessen Sicherheit oder Wirksamkeit beeintrachtigt wird. 2 Lebenserhaltende Gerate und Systeme sind (a) zur chirurgischen Einpflanzung in den menschlichen Korper gedacht, oder (b) unterstutzen bzw. erhalten das menschliche Leben. Sollten sie ausfallen, besteht berechtigter Grund zur Annahme, da die Gesundheit des Anwenders gefahrdet werden kann.
Revision History
#
Subject
Preliminary Data Sheet 5.95 Page Item 8 1 4 13 15 15 29
Preliminary Data Sheet 8.97 Page 13 13 15 15 29 Item 8 9 1 4
Change
1 2 3 4 5
Thermal resistance ESD integrity Supply current External DC voltage at IF/IFX Application Circuit
Revised Added Revised Revised Revised
PMB 2201
Table of Contents 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.4.1 2.4.2 2.4.3 2.4.4 2.4.5 2.5 2.5.1 2.5.2 3
Page
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Applications: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Functional Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 Circuit Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Blocks with separate supply, ground and power down pins . . . . . . . . . . . . .11 Internal Input/Output Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Operational Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 AC/DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 S-Parameters and Input/Output Impedances . . . . . . . . . . . . . . . . . . . . . . . . .19 Mixer Input RF/RFX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 Mixer Input IF/IFX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21 Mixer Output MO/MOX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23 Modulator Input LO/LOX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24 Modulator Output E/EX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26 Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28 Test Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28 Application Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .31
Semiconductor Group
4
08.97
Mixer DC - 2.5GHz and Vector Modulator 0.8 - 1.5GHz
PMB 2201
Version 1.2 1 1.1 Overview Features
Bipolar IC
* Direct quadrature modulator with separate additional double balanced active mixer * Direct quadrature modulation * LO frequency range from 800 MHz to 1.5 GHz * Generation of orthogonal carriers without external elements and without trimming * * * * * * * * * * *
P-TSSOP-24
typ. 40 dB carrier rejection, typ. 44 dB SSB rejection typ. 43 dB rejection of third order products at 1 Vpp A/B drive level at fLO = 1.5 GHz 3 dBm output power with appropriate output power matching network and at 1Vpp A/B baseband drive level Double balanced Gilbert cell mixer RF and IF frequency range from DC to 2.5 GHz typ. 39 dB carrier rejection low noise Supply voltage range from 2.7 V to 4.5 V Power down mode P-TSSOP-24 package Temperature range -30 to 85C Applications:
1.2
* Vector modulated digital mobile cellular systems as GSM, PDC-800, PDC-1.5, DAMPS etc. * Various modulation schemes, such as PM, PSK, FSK, QAM, QPSK, GMSK etc. * Analog systems with FM and AM modulation * Space and power saving optimizations of existing discrete transmitter circuits
Type PMB 2201
Semiconductor Group
Ordering Code Q67006-A6137 (T+R)
5
Package P-TSSOP-24
08.97
PMB 2201
1.3 Functional Description The PMB2201 is a modulator and mixer circuit with high integration level. It includes a direct quadrature modulator and a double balanced Gilbert cell mixer with according bias circuitry. The up/down conversion mixer combines two external signals at the RF and IF inputs. The IF input is suited for the lower frequency signal because of its linear transfer function to the mixer output. The higher frequency signal is fed to the RF input to switch the Gilbert cell mixer. In a typical application the wanted mixer output product is bandpass filtered and then fed to the modulator LO input. The mixer may also be used to convert the modulator output signal from E/EX via the IF/IFX input by mixing with a local oscillator signal RF/RFX to higher frequencies up to 2.5 GHz. The modulator generates two orthogonal carriers which are mixed with the baseband modulation signals A and B in Gilbert multipliers. The outputs of the Gilbert cells are added and amplified by a linear output stage. The modulated signal is available at the open collector output E,EX. The voltage TREF can be used for DC biasing of the modulation inputs A, AX, B, BX externally. The modulator and the mixer have separate power supplies and grounds. They can be powered down independently. Due to the power down concept the modulator can be used without or in conjunction with the up/down conversion mixer part. For applications in the frequency range from 1.4GHz to 2.5GHz the derivative PMB2202 is offered.
Semiconductor Group
6
08.97
PMB 2201
1.4
Pin Configuration (top view)
RF VCC2 MOX MO GND2 ADJ LOX LO PD1 TREF A AX
1 2 3 4 5 6 7 8 9 10 11 12
24 23 22 21 20 19 18 17 16 15 14 13
RFX GND2 IF IFX PD2 GND1 E EX VCC1 GND1 B BX
P-TSSOP-24
Semiconductor Group
7
08.97
PMB 2201
1.5 Pin No.
1 2 3 4 5,23 6 7 8 9 10 11 12 13 14 15, 19 16 17 18 20 21 22 24
Pin Definitions and Functions Symbol
RF VCC2 MOX MO GND2 ADJ LOX LO PD1 TREF A AX BX B GND1 VCC1 EX E PD2 IFX IF RFX
Function RF input, base input Supply voltage for mixer Mixer output inverted, open collector Mixer output, open collector Ground for mixer Phase adjust input Modulator LO input inverted Modulator LO input Power down for modulator DC bias voltage for modulation inputs A, AX, B, BX Modulation input A Modulation input A inverted Modulation input B inverted Modulation input B Ground for modulator Supply voltage for modulator Modulator output inverted, open collector Modulator output, open collector Power down for mixer IF input inverted, emitter input IF input, emitter input RF input inverted, base input
Semiconductor Group
8
08.97
PMB 2201
1.6
Functional Block Diagram
RF VCC2 MOX MO
1
RFX GND2 IF IFX
bias2
GND2 ADJ LOX LO PD1 TREF A PD2 GND1 E EX
fx2
bias1
VCC1 GND1 B
f/2
AX BX
Semiconductor Group
9
08.97
PMB 2201
1.7
Circuit Description
Block Level Description The PMB2201 includes an up/down conversion mixer and a direct quadrature modulator on one chip. The mixer is a fully balanced Gilbert cell. The IF, IFX pins are low impedance inputs. The transfer function from this input to the mixer output is linear for input levels below the 1dB compression point. For improved intermodulation the mixer current can be increased with external resistors to GND2 at IF, IFX. The RF, RFX pins are high impedance inputs and are DC connected to the bases of the transistors in the Gilbert cell. The input level at RF, RFX should be high enough to ensure proper switching of the differential transistor pairs. The mixer output pins MO, MOX are high impedance open collector outputs. The wanted mixer output product can be band pass filtered and fed to the LO,LOX input of the modulator or to an external load. The LO, LOX pins are the high impedance inputs of an emitter coupled differential pair. The LO signal is internally divided into two orthogonal carriers at the transmit frequency. The modulator has two Gilbert cell multipliers, in which the modulation signals A(t) and B(t) are mixed with the orthogonal carriers. The outputs of both Gilbert cells are added and amplified by a linear output stage. The modulated transmit signal is available at the high impedance open collector outputs E/EX and can be fed to a power amplifier. At the output TREF a DC voltage for biasing the modulation inputs A, AX, B, BX is available, which should be capacitively decoupled to ground. The modulation inputs can be connected externally via bias resistors to TREF. Due to the low voltage concept a balanced drive of the differential modulator inputs is recommended to obtain the best second and third order spurious suppression. The phase adjust input ADJ allows the single sideband suppression of the modulator to be optimized for a particular application. If the specified sideband suppression is sufficient, ADJ should only be capacitively decoupled to ground, in which case the voltage at ADJ is set internally to half the TREF voltage. If a higher suppression is required, the voltage at ADJ can be adjusted to the optimum value by a pull-up resistor to TREF, a pull-down resistor to GND1 or a potentiometer between TREF and GND1. The modulator and the mixer have separate supply, ground and power down pins: VCC1, GND1, PD1 for the modulator and VCC2, GND2, PD2 for the mixer. Applying a logic LOW to PD1 or PD2 powers down the corresponding part of the chip, including its bias circuitry. Depending on the application the power down pins can be combined or separately fixed to supply rails.
Semiconductor Group
10
08.97
PMB 2201
1.8
Blocks with separate supply, ground and power down pins
RF VCC2 MOX MO
1
RFX GND2 IF IFX
bias2
GND2 ADJ LOX LO PD1 TREF A PD2 GND1 E EX
fx2
bias1
VCC1 GND1 B
f/2
AX BX
VCC1 GND1 PD1
VCC2 GND2 PD2
Semiconductor Group
11
08.97
PMB 2201
1.9
Internal Input/Output Circuits
RF VCC2 MOX MO
1
2k 2k
RFX bias2
800
GND2 IF IFX
800
GND2 ADJ
40k 40k 2k
200k 200k
PD2 GND1 E EX VCC1 GND1 B BX
LOX LO PD1 TREF A AX
2k
200k 200k 7k
bias1
Semiconductor Group
12
08.97
PMB 2201
2 2.1
Electrical Characteristics Absolute Maximum Ratings
The maximum ratings may not be exceeded under any circumstances, not even momentarily and individually, as permanent damage to the IC will result.
#
Parameter
Sym Limit Values bol Min Max
VCC VIO VOC -0,5 -0.5 -0.5 4.5
Units Remarks
1 2 3
Supply Voltage Input Voltage Open Collector Output Voltage (MO, MOX, E, EX) Differential Input Voltage (any differential Input) Input current (IF, IFX) Junction Temperature Storage Temperature Thermal Resistance (junction to lead) ESD Integrity *
V of PD1, PD2
VCC + 0.5 V VCC + 0.5 V
4 5 6 7 8 9
VI IIF Tj TS RthJL VESD
-2
2 10 125
V mA C C K/W V according MILSTD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993
-55
125 140
-1000
1000
* The RF pins 3,4,17 and 18 are not protected against voltage stress > 300V (versus VS or GND). The high frequency performance prohibits the use of adequate protective structures.
Semiconductor Group
13
08.97
PMB 2201
2.2
Operational Range
Within the operational range the IC operates as described in the circuit description. The AC/DC characteristic limits are not guaranteed. Supply voltage VVCC = 2.7V...4.5V, Ambient temperature Tamb = -30C...85C
#
Parameter
Symbol
Min
Limit Values
Max
Units
1 2 3
VCC1, VCC2 Supply PD-Signals Voltage-L PD-Signals Voltage-H
VCC1,VCC2 VPDL VPDH
2.7 0 2.1
4.5 0.8 VCC
V V V
Mixer section 4 5 6 7 8 9 RF, RFX input frequency RF, RFX input level IF, IFX input frequency IF, IFX input level MO, MOX output frequency fRF PRF fIF PIF fMO DC 33 DC DC 2.5 0 2.5 0 2.5 GHz dBm GHz dBm GHz
Minimum resistive load R2, R3 at R2, R3 IF, IFX to GND in Test Circuit 1
Modulator section 10 11 12 13 14 LO, LOX input frequency LO, LOX input level A, AX, B, BX input frequency A, AX, B, BX input level A-AX, B-BX differential input signal level fLO PLO fA, fB VA, VAX, VB, VBX VA-AX, VB-BX 800 -15 DC 1.4 1500 0 400 VCC1-0.6 1 MHz dBm MHz V Vpp
Note: Power levels refer to 50 Ohms impedance
Semiconductor Group
14
08.97
PMB 2201
2.3
AC/DC Characteristics
AC/DC characteristics involve the spread of values guaranteed within the specified supply voltage and ambient temperature range. Typical characteristics are the median of the production. Supply voltage VVCC = 2.7V...4.5V, Ambient temperature Tamb = +25C
#
Parameter
Symbol
Limit Values
Min Typ Max
Unit
Test Conditions
TestCircuit
Supply Current
1 Supply current with all powered up IVCC1 IE+IEX IVCC2 IMO+IMOX* IVCC1 IE+IEX IVCC2 IMO+IMOX tPU 2 13 9 0.3 5 17 12 0.6 7 21 15 1.0 9 2 2 2 2 mA mA mA mA A A A A s PD1 & PD2 = H 1
2
Supply current with all powered down
PD1 & PD2 = L 1
3
Power up settling time **
1nF at TREF 100pF at ADJ Modulator inputs DC coupled
Mixer section Mixer Input
4 5 Internal DC voltage at IF/IFX *** Internal DC voltage at RF/RFX VDCIF VDCRF 0.30 2.0 V V 1 1
* The mixer current decreases when no external resistors to ground are connected at IF and IFX as in the test circuit 1 from the preliminary data sheet 9.95. In this case the typical value of IMO+IMOX is 1mA. ** tPU is determined by the time needed to charge the external capacitors. *** Note: There are external resistors (82 Ohms) at IF and IFX to ground.
Semiconductor Group
15
08.97
PMB 2201
AC/DC Characteristics AC/DC characteristics involve the spread of values guaranteed within the specified supply voltage and ambient temperature range. Typical characteristics are the median of the production. Supply voltage VVCC = 2.7V to 4.5V, Ambient temperature Tamb = +25
#
Parameter
Symbol
Limit Values
Min Typ Max
Unit
Test Conditions
TestCircuit
Mixer Output MO/MOX:
6 7 Power gain* Output power** G PMO -12 3 -9 -6 dB dBm Application Circuit PRFIN = -5dBm 1 fRF IN = 1.4 GHz PIFIN = -5dBm fIF IN = 400 MHz PRFIN > -4dBm DSB Noise, f=1GHz PRFIN = -5dBm 1 fRF IN = 1.4 GHz PIFIN = -5dBm fIF IN = 400 MHz Application Circuit
8 9 10
1dB compression point* Noise figure* Carrier suppression**
PIF1dB NIF aC 25
-7 8 39
dBm dB dB
*
Design hint
** These values changed compared to the preliminary data sheet 9.95 due to changes in the test circuit 1. The internal circuit of the mixer is the same.
Semiconductor Group
16
08.97
PMB 2201
AC/DC Characteristics AC/DC characteristics involve the spread of values guaranteed within the specified supply voltage and ambient temperature range. Typical characteristics are the median of the production. Supply voltage VVCC = 2.7V...4.5V, Ambient temperature Tamb = +25C # Parameter Symbol Limit Values min. typ. max. Unit Test Condition
Test Circuit
Modulator section Modulator LO Input at LO, LOX
11 Internal DC voltage at LO, LOX VDCLO VCC1 - 0.7V V 1
Modulator Inputs A/AX and B/BX
12 13 14 15 Input DC current at A, AX, B, BX Differential input offset current Differential input resistance* Differential input capacitance* IA, IAX, IB, IBX IOSA, IOSB RA/AX, RB/BX CA/AX, CB/BX -1 125 250 1 5 10 1 A A k pF fA,B = 100 kHz fA,B = 100 kHz Differential input voltage = 0V 1 1
DC bias TREF for A/AX and B/BX inputs
16 Reference voltage for A, B modulating inputs Minimum decoupling capacitance at TREF* Maximum load current at TREF* VTREF 1.65 1.75 1.85 V 1
17
CTREF
1
nF
18
ILMAX
1.0
mA
* Design hint
Semiconductor Group
17
08.97
PMB 2201
AC/DC Characteristics AC/DC characteristics involve the spread of values guaranteed within the specified supply voltage and ambient temperature range. Typical characteristics are the median of the production. Supply voltage VVCC = 2.7V...4.5V, Ambient temperature Tamb = +25C # Parameter Symbol Limit Values min. typ. max. Unit Test Condition
Test Circuit
Phase adjust input ADJ
19 20 Open circuit voltage Input impedance VADJ RADJ 880 20 mV k 1
Modulator output E/EX: fA,B=10MHz; VA,B=1VPP; 90 phase shift; PLO=-10dBm
21 22 23 24 25 Output power Output power for power matching * PE/EX PE/EX 32 30 35 28 35 -6 -2 3 47 40 44 32 43 -140 2 dBm dBm dB dB dB dB dB dBc /Hz fLO = 800 MHz fLO = 1500 MHz fLO = 915MHzfmeas = 935MHz fLO = 1429MHz fLO = 800MHz fLO = 1500MHz 1 Appl. circuit 1 1 1
Carrier suppression ** aC Single sideband suppression *** Suppression of third order distortion products **** Output noise floor * assb aIM3
26
PN
*
Application hint
** The carrier suppression can be optimized for a particular application using offset voltages at the baseband inputs A/AX and B/BX. The optimum values can be found iteratively by adjusting the A/AX and B/BX offsets alternately until the carrier disappears into the noise floor. If the actual offset voltages differ from their optimum values by VOSA and VOSB, the carrier suppression in dB is given by
Vm a c = 20 log 10 ------------------------------------------------------------2 2 ( V OSA ) + ( V OSB )
where Vm is the peak value of the signal voltage at A/AX and B/BX. *** Phase adjust pin ADJ not used. **** aIM3 can be increased by reducing the amplitude of the modulator inputs VA-AX and VB-BX.
Semiconductor Group
18
08.97
PMB 2201
2.4
S-Parameters and Input/Output Impedances
The S-parameters provided in this section are based on measurements at the supply voltage of VCC = 3.6V. Via the internal bias tees of the NWA the capacitive coupling is done and the open collector pins are connected to VCC. The S-parameters have to be considered as application hints. Test RF-Input impedance IF-Input impedance MO-Output impedance LO-Input impedance E-Output impedances Frequency [MHz] 25 - 2500 25 - 2500 25 - 2500 800 - 1500 800 - 1500 Port 1 RF IF MO LO E Port 2 RFX IFX MOX LOX EX Output levels -5 dBm -30 dBm -30 dBm -5 dBm -30 dBm
The input/output impedances are calculated from these parameters. The impedances are given as equivalent circuit with lumped elements for differential and single ended in/outputs. As equivalent circuit for these in-/outputs a resistor Rp parallel to a capacitance Cp is derived:
Rpd differential
Cpd single ended
Rps
Cps
The IF-Input impedance is given as a equivalent circuit of a resistor Rs serial to a inductivity Ls.
Rsd Lsd differential single ended
Rss Lss
Semiconductor Group
19
08.97
PMB 2201
2.4.1
Mixer Input RF/RFX
Circuit for measurement:
DC Supply 82 10p 50 10p 82
VCC2 IF PD2 MO
1 nF 1 nF
DUT
IFX RF MOX RFX
50
P2 NWA P1
Mixer Input RF/RFX S-Parameters:
f MHz 25 250 500 750 1000 1250 1500 1750 2000 2250 2500
S11 MAG 0.953 0.942 0.922 0.902 0.872 0.836 0.787 0.738 0.688 0.635 0.567
ANG -0.7 -7.5 -15.2 -23.3 -32.5 -41.5 -50.1 -58.0 -66.0 -77.1 -92.0
S21 MAG 0.025 0.032 0.060 0.091 0.123 0.145 0.171 0.196 0.233 0.261 0.276
ANG 8.6 47.1 62.1 59.0 50.7 44.6 37.5 31.1 22.5 12.1 1.1
S12 MAG 0.025 0.029 0.055 0.085 0.119 0.144 0.177 0.207 0.253 0.290 0.321
ANG 8.8 43.7 65.0 64.2 57.0 52.4 46.5 40.5 30.9 20.4 9.7
S22 MAG 0.953 0.942 0.926 0.910 0.887 0.867 0.840 0.808 0.769 0.715 0.636
ANG -0.7 -7.8 -15.6 -23.7 -32.7 -41.4 -50.5 -59.7 -69.6 -82.5 -98.7
Semiconductor Group
20
08.97
PMB 2201
Mixer Input RF/RFX Impedances:
3
Rpd Rps
1.3 1.2 1.1
2.5
R in kOhm
2 1.5 1 0.5 0 0 500 1000 1500 2000 2500
f in MHz C in pF
1 0.9 0.8 0.7 0.6 0.5 0 500 1000 1500 2000 2500
f in MHz
Cpd Cps
2.4.2
Mixer Input IF/IFX
Circuit for measurement:
82
Internal Bias Tees
DC Supply
Bias Tee
P1
IF
VCC2 PD2 MO
50
NWA
P2
DUT
IFX RF MOX RFX 1nF
Bias Tee
50
1nF
82
50
Semiconductor Group
21
08.97
PMB 2201
Mixer Input IF/IFX S-Parameters:
f MHz 25 250 500 750 1000 1250 1500 1750 2000 2250 2500
S11 MAG 0.445 0.314 0.280 0.285 0.303 0.327 0.361 0.401 0.446 0.501 0.549
ANG 174.3 150.0 144.9 139.6 134.4 128.8 122.6 115.0 106.6 98.0 88.2
S21 MAG 0.248 0.408 0.426 0.417 0.397 0.372 0.347 0.322 0.296 0.275 0.287
ANG 7.5 8.7 -2.3 -9.1 -14.7 -18.7 -21.6 -23.9 -24.8 -22.3 -19.1
S12 MAG 0.247 0.410 0.428 0.420 0.402 0.378 0.353 0.329 0.307 0.292 0.305
ANG 7.9 9.3 -1.8 -8.6 -13.9 -18.4 -21.1 -23.0 -23.8 -22.3 -21.8
S22 MAG 0.444 0.314 0.279 0.287 0.308 0.335 0.358 0.383 0.417 0.461 0.501
ANG 174.3 149.9 145.3 141.1 136.7 131.0 123.9 116.1 107.5 97.4 85.3
Mixer Input IF/IFX Impedances:
28 26 24
R in Ohm
6.5 6 5.5
L in nH
Lsd Lss
5 4.5 4 3.5 3 2.5
22 20 18 16 14 0 500 1000 1500 2000 2500
f in MHz
Rsd Rss
0
500
1000
1500
2000
2500
f in MHz
Semiconductor Group
22
08.97
PMB 2201
2.4.3
Mixer Output MO/MOX
Circuit for measurement:
82
Bias Tee Internal Bias Tees
50
IF
VCC2 PD2
P1
DUT
RF
MO MOX
NWA
P2
50
Bias Tee
IFX
RFX 1nF
1nF
82
Power Supply 3.6V 50
Mixer Output MO/MOX S-Parameters:
f MHz 25 250 500 750 1000 1250 1500 1750 2000 2250 2500
S11 MAG 0.995 0.987 0.975 0.957 0.935 0.911 0.890 0.871 0.847 0.814 0.775
ANG -0.7 -6.7 -13.4 -20.4 -27.3 -34.2 -40.8 -47.3 -54.1 -61.7 -71.6
S21 MAG 0.005 0.013 0.040 0.062 0.080 0.095 0.108 0.106 0.099 0.097 0.115
ANG 2.4 115.8 100.7 89.2 82.4 78.4 72.5 68.2 73.2 85.2 106.5
23
S12 MAG 0.005 0.013 0.040 0.063 0.080 0.096 0.113 0.115 0.108 0.110 0.125
ANG -2.7 119.2 103.1 91.0 84.4 81.4 75.8 70.2 74.1 82.9 97.0
S22 MAG 0.997 0.984 0.970 0.952 0.931 0.895 0.870 0.857 0.834 0.797 0.751
ANG -0.7 -7.5 -14.8 -23.0 -31.8 -40.7 -48.7 -56.6 -65.1 -73.8 -84.2
08.97
Semiconductor Group
PMB 2201
Mixer Output MO/MOX Impedances:
30
Rpd Rps
25 20 15 10 5 0 0 500 1000 1500 2000 2500
f in MHz C in pF
0.9 0.85 0.8 0.75 0.7 0.65 0.6 0.55 0.5 0.45 0.4 0.35 0 500 1000 1500 2000
f in MHz
R in kOhm
Cpd Cps
2500
2.4.4
Modulator Input LO/LOX
Circuit for measurement:
DC Supply
Bias Tee
P1
VCC1 PD1 LO E
50 50
EX
NWA
P2
DUT
LOX
Bias Tee
Semiconductor Group
24
08.97
PMB 2201
Modulator Input LO/LOX S-Parameters:
f MHz 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500
S11 MAG 0.940 0.934 0.928 0.923 0.919 0.914 0.910 0.905 0.900 0.896 0.893 0.891 0.888 0.886 0.884
ANG -20.1 -21.4 -22.7 -24.0 -25.2 -26.6 -27.9 -29.1 -30.4 -31.5 -32.7 -33.9 -35.1 -36.4 -37.7
S21 MAG 0.041 0.043 0.047 0.051 0.055 0.058 0.061 0.065 0.069 0.073 0.076 0.078 0.079 0.079 0.078
ANG 63.8 67.5 70.2 71.6 71.9 72.0 72.4 72.6 72.4 71.3 69.4 67.3 65.2 63.6 62.3
S12 MAG 0.041 0.043 0.047 0.051 0.055 0.058 0.061 0.064 0.069 0.073 0.076 0.078 0.079 0.079 0.078
ANG 63.8 67.5 70.3 71.5 71.9 72.0 72.4 72.7 72.4 71.4 69.5 67.4 65.3 63.6 62.3
S22 MAG 0.937 0.931 0.925 0.919 0.914 0.909 0.904 0.898 0.893 0.889 0.887 0.885 0.883 0.881 0.878
ANG -17.3 -18.5 -19.6 -20.7 -21.9 -23.1 -24.2 -25.3 -26.4 -27.5 -28.5 -29.6 -30.8 -32.0 -33.3
Modulator Input LO/LOX Impedances:
3 2.75 2.5 2.25
R in kOhm
Rpd Rps
0.75 0.7 0.65
C in pF
Cpd Cps
2 1.75 1.5 1.25 1 0.75 0.5 800 900 1000 1100 1200 1300 1400 1500
0.6 0.55 0.5 0.45 0.4 0.35 800 900 1000 1100 1200 1300 1400
1500
f in MHz
f in MHz
Semiconductor Group
25
08.97
PMB 2201
2.4.5
Modulator Output E/EX
Circuit for measurement:
VCC1
50 50
PD1 E EX
Internal Bias Tees
LO LOX
P1
DUT
NWA
P2
Power Supply 3.6V
Modulator Output E/EX S-Parameters:
f MHz 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500
S11 MAG 0.978 0.976 0.975 0.970 0.969 0.965 0.963 0.960 0.953 0.950 0.942 0.935 0.933 0.927 0.920
ANG -22.7 -24.5 -26.3 -28.0 -29.6 -31.5 -33.4 -35.2 -37.1 -38.9 -40.6 -42.5 -44.1 -45.8 -47.7
S21 MAG 0.095 0.101 0.106 0.107 0.109 0.112 0.114 0.118 0.123 0.124 0.128 0.130 0.132 0.133 0.136
ANG 66.7 64.3 61.6 59.2 58.9 57.1 57.7 56.5 55.7 53.2 52.2 50.1 48.5 47.3 46.0
S12 MAG 0.110 0.117 0.124 0.127 0.130 0.135 0.135 0.137 0.136 0.138 0.138 0.139 0.142 0.143 0.145
ANG 68.1 66.6 63.5 61.0 58.4 55.5 52.4 51.0 49.0 47.5 47.0 45.8 44.0 43.4 41.4
S22 MAG 0.975 0.977 0.977 0.976 0.971 0.969 0.966 0.960 0.956 0.953 0.950 0.947 0.945 0.943 0.941
ANG -22.5 -24.2 -25.7 -27.7 -29.5 -31.4 -33.4 -35.1 -36.7 -38.6 -40.3 -42.2 -44.1 -45.9 -47.8
Semiconductor Group
26
08.97
PMB 2201
Modulator Output E/EX Impedances:
11 10 9 8
R in kOhm
0.95
Rpd Rps
0.9 0.85 0.8
C in pF
Cpd Cps
7 6 5 4 3 2 1 800 900 1000 1100 1200 1300 1400 1500
0.75 0.7 0.65 0.6 0.55 0.5 800 900 1000 1100 1200 1300 1400 1500
f in MHz
f in MHz
Semiconductor Group
27
08.97
PMB 2201
2.5
Circuits
2.5.1
Test Circuit 1
27 R1 RFIN TR4 C7 1nF C8 1nF C20 1nF
RF
RFX
27 R4
VCC2
VCC2
C9 1nF TR1 C10 1nF
GND2
82 R3
MOX
IF
TR5
C21 1nF C22 1nF
IFIN
MOUT
MO
IFX
82 R2
GND2
C1 1nF C13 1nF
PD2
C23 1nF
PD2
ADJ
GND1
100 R8 LOIN TR2 100 R7 PD1 C15 1nF
LOX
E
TR6
C24 1nF C25 1nF
EOUT
C14 1nF
LO
EX
PD1
VCC1
C26 1nF
VCC1
C16 1nF C18 4.7nF TR3 R6 220 C17 4.7nF
TREF
GND1
C28 4.7nF
2.2k A AIN AX R12 R11 2.2k
A
B
2.2k B R9 2.2k BIN BX
R5 220 C27 4.7nF
TR7
C19 4.7nF
AX
BX
C29 4.7nF
R10
Semiconductor Group
28
08.97
PMB 2201
2.5.2
Application Circuit
Semiconductor Group
29
08.97
PMB 2201
The application circuit is designed for the following frequencies:
Mixer section: fIF-IN : fLO-IN : fMIX-OUT : 178 MHz 1607 MHz - 1631 MHz 1429 MHz - 1453 MHz
Modulator section: fMOD-IN = 1429MHz - 1453MHz fMOD-OUT = 1429MHz - 1453MHz
Semiconductor Group
30
08.97
PMB 2201
3
Package Outlines P-TSSOP-24 (Plastic Package)
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Semiconductor Group 31
Dimensions in mm 08.97

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