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| MITSUBISHI TRANSISTOR MODULES QM30HQ-24 DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE QM30HQ-24 * * * * * IC Collector current .......................... 30A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain................................. 5 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Base driver for High voltage transistor modules OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 70 60 2- 5.5 C 0.8 B C 27 E (16.5) B E 1.3 Tab # 187, t=0.5 7.5 15 6 15 4.75 6.35 2.5 15 3.2 LABEL 23.5 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30HQ-24 DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC PC IB Tj Tstg Viso -- -- Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector dissipation Base current Junction temperature Storage temperature Isolation voltage Mounting torque Weight (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC TC=25C DC Ratings 1200 1200 1200 7 30 310 6 -40~+150 -40~+125 Charged part to case, AC for 1 minute Mounting screw M5 Typical value 2500 1.47~1.96 15~20 90 Unit V V V V A W A C C V N*m kg*cm g ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) hFE ton ts tf Rth (j-c) Q Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=1200V, VEB=2V VCB=1200V, Emitter open VEB=7V IC=15A, IB=3A IC=15A, VCE=1V Min. -- -- -- -- -- 5 -- VCC=600V, IC=15A, IB1=-IB2=3A -- -- Transistor part Conductive grease applied -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 200 1.0 1.5 -- 1.5 7.0 2.0 0.4 0.25 Unit mA mA mA V V -- s s s C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30HQ-24 DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 40 COLLECTOR CURRENT IC (A) Tj=25C 30 IB=5A IB=3A 20 IB=2A 10 IB=1A IB=0.5A 0 DC CURRENT GAIN HFE DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 VCE=1.0V Tj=25C Tj=125C 0 1 2 3 4 5 VCE (V) 10 -1 10 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (sat), VBE (sat) (V) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 3 2 10 0 7 5 3 2 Tj=25C Tj=125C SATURATION VOLTAGE VBE(sat) 10 -1 VCE(sat) 7 5 IB=3.0A 3 2 10 -2 10 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) Feb.1999 |
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