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| SD56150 RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs * EXCELLENT THERMAL STABILITY * COMMON SOURCE CONFIGURATION, PUSHPULL * POUT = 150 W WITH 13 dB gain @ 860 MHz /32V * BeO FREE PACKAGE * INTERNAL INPUT MATCHING ORDER CODE SD56150 M252 epoxy sealed BRANDING SD56150 DESCRIPTION The SD56150 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56150 is designed for high gain and broadband performance operating in common source mode at 32 V. Its internal matching makes it ideal for TV broadcast applications requiring high linearity. PIN CONNECTION 1 2 3 5 4 1. Drain 2. Drain 3. Source 4. Gate 5. Gate ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 20 17 236 200 -65 to +150 Unit V V A W C C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 0.55 C/W November, 27 2002 1/8 SD56150 ELECTRICAL SPECIFICATION (TCASE = 25 C) STATIC (Per Section) Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS* COSS CRSS VGS = 0 V VGS = 0 V VGS = 20 V VDS = 28 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions IDS = 10 mA VDS = 28 V VDS = 0 V ID = 100 mA ID = 3 A ID = 3 A VDS = 28 V VDS = 28 V VDS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 2.5 255 50 2.9 2.0 0.5 Min. 65 1 1 5.0 0.8 4 Typ. Max. Unit V A A V V mho pF pF pF * Includes Internal Input Moscap. DYNAMIC Symbol POUT GPS D Load mismatch VDD = 32 V VDD = 32 V VDD = 32 V Test Conditions IDQ = 500 mA IDQ = 500 mA IDQ = 500 mA POUT = 150 W POUT = 150 W POUT = 150 W f = 860 MHz f = 860 MHz f = 860 MHz f = 860 MHz Min. 150 13 50 10:1 16.5 60 Typ. Max. Unit W dB % VSWR VDD = 32 V IDQ = 500 mA ALL PHASE ANGLES IMPEDANCE DATA D ZDL Typical Input Impedance G Zin Typical Drain Load Impedance S FREQ. 860 MHz 880 MHz 900 MHz ZIN () 4.7 - j 5.5 4.3 - j 6.9 4.5 - j 8.8 ZDL() 3.6 + j 6.5 3.9 + j 7.4 4.4 + j 7.8 Measured drain to drain and gate to gate respectively. 2/8 SD56150 TYPICAL PERFORMANCE Capacitance vs. Drain Voltage 1000 Gate Source Voltage vs. Case Temperature 1.0 4 C is s 1.0 2 Id = 6 A 100 Vgs (Normalised) 1.0 0 Id = 5 A Id = 4 A Id = 3 A C (pF) 0.9 8 Id = 2 A 0.9 6 C os s 10 C rs s Id = 1 A 0.9 4 Id = 0 .5 A Vds = 10 V 0.9 2 f = 1 MHz 1 0 5 10 15 20 Vdd (V) 25 30 35 40 -2 5 0 25 T c (C ) 50 75 1 00 Drain Current vs. Gate-Source Voltage 4 .5 4 3 .5 3 Id (A) 2 .5 2 1 .5 1 0 .5 Vds = 1 0 V 0 0 1 2 3 Vg s (V ) 4 5 6 3/8 SD56150 TYPICAL PERFORMANCE Output Power vs. Input Power 180 160 140 120 100 80 60 Power Gain vs. Output Power 20 19 18 Id q = 2 x2 5 0 m A Id q = 2 x6 0 0 mA 17 16 Id q = 2 x4 0 0 mA Id q = 2 x2 0 0 mA Id q = 2 x2 5 0 mA Pout (W) Gp (dB) 15 14 13 40 20 12 Vd d = 3 2 V f = 8 6 0 M Hz 0 1 2 Pin (W ) 3 4 5 11 10 0 Vd d = 3 2 V f = 8 6 0 M Hz 0 50 100 Po u t (W ) 150 2 00 Efficiency vs. Output Power 80 Output Power vs. Supply Voltage 200 Pin = 5 W 180 160 70 60 140 50 120 40 Id q = 2 x2 5 0 mA 30 Pin = 3.2 W Pout (W) d (%) 100 80 60 Pin = 1.6 W 20 40 10 Vd d = 3 2 V f = 8 6 0 MHz 0 0 50 100 Pout (W ) 150 200 20 0 0 f = 8 60 MHz Id q = 2 x 2 5 0 m A 10 20 Vdd (V) 30 40 Efficiency vs. Supply Voltage 70 Pin = 5 W 60 Pin = 3 . 2 W 50 Intermodulation Distorsion vs. Output Power 0 -1 0 -2 0 IMD3 (dB) Pin = 1 . 6 W Id q = 2 x2 5 0 m A Id q = 2 x6 0 0 m A Id q = 2 x2 0 0 m A 40 d (%) -3 0 30 -4 0 20 Id q = 2 x4 0 0 m A -5 0 10 f = 8 6 0 M Hz Id q = 2 x 2 5 0 m A 0 0 10 20 Vd d (V ) 30 40 f1 = 8 5 9 .9 MHz f2 = 8 6 0 .0 MHz Vd d = 3 2 V -6 0 0 50 10 0 Po u t (W ) 150 20 0 4/8 SD56150 TEST CIRCUIT SCHEMATIC NOTES: 1. GAP BETWEEN GROUND & TRANSMISSION LINE = 0.056 [1.42] +0.002 [0.05] -0.000 [0.00] TYP. 2. C3 AND C4 ADJACENT TO EACH OTHER REF. 7248365A TEST CIRCUIT COMPONENT PART LIST C1,C2, C10, C11 C3 C4, C8 C5 C6 C7 C9 C12, C15, C18, C22 C13, C16, C20, C24 C14, C17, C21, C25 C19, C23 R1, R2, R3, R4 R5, R6 L1, L2 FB1, FB2 B2, B1 PCB DESCRIPTION 51 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 9.1 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 0.6 - 4.5 pF GIGATRIM VARIABLE CAPACITOR 10 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 4.7 pF ATC 100A SURFACE MOUNT CERAMIC CHIP CAPACITOR 13 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 6.2 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 91 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 10 F 50V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR 0.1 F 500V SURFACE MOUNT CERAMIC CHIP CAPACITOR 100 F 63V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR 200 OHM 1/4 W SURFACE MOUNT CHIP RESISTOR 1.8 OHM 1/4 W SURFACE MOUNT CHIP RESISTOR CHIP INDUCTOR 10 nH SURFACE MOUNT COIL SURFACE MOUNT EMI SHIELD BEAD BALUN, 25 OHM, SEMI-RIDGE OD 0.141 2.365 LG COAXIAL CABLE OR EQUIVALENT WOVEN GLASS REINFORCED / CERAMIC FILLED 0.030" THK r = 3.48, 2 Oz ED CU BOTH SIDES 5/8 SD56150 TEST FIXTURE TEST CIRCUIT PHOTOMASTER 6.4 inches 6/8 4 inches SD56150 M252 (.400 x .860 4L BAL N/HERM W/FLG) MECHANICAL DATA mm Inch MAX 8.64 10.80 3.00 9.65 2.16 21.97 27.94 33.91 0.10 1.52 2.36 4.57 9.96 21.64 34.16 0.15 1.78 2.74 5.33 10.34 22.05 1.335 .004 .060 .093 .180 .392 .852 3.30 9.91 2.92 22.23 .118 .380 .085 .865 1.100 1.345 .006 .070 .108 .210 .407 .868 MIN. .320 .425 .130 .390 .115 .875 TYP. MAX .340 DIM. A B C D E F G H I J K L M N MIN. 8.13 TYP. Controlling dimension: Inches 1022783C 7/8 SD56150 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8 |
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