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| SDC03 Absolute maximum ratings Symbol VCBO VCEO VEBO IC ICP IB PT Tj Tstg Ratings 6010 6010 6 1.5 NPN Darlington With built-in avalanche diode (Ta=25C) External dimensions E *** SD Electrical characteristics Symbol ICBO IEBO VCEO hFE VCE(sat) VBE(sat) VFEC ton tstg tf fT Cob 1.1 50 2000 60 5000 1.2 1.8 1.3 0.5 4.0 1.0 50 25 Specification min typ max 10 3.5 70 12000 1.4 2.2 1.8 V V V Unit (Ta=25C) Unit V V V A A A W C C C/W Conditions VCB=50V VEB=6V IC=10mA VCE=4V, IC=1A IC=1A, IB=2mA IFEC=1A VCC 30V, IC=1A, IB1=-IB2=2mA VCE=12V, IE=-0.1A VCB=10V, f=1MHz A mA V 2.5 (PW1ms, Du10%) 0.1 3 (Ta=25C) 150 -40 to +150 41.6 s s s MHz pF j-a sEquivalent circuit diagram 15,16 1 R1 R2 2 3 13,14 5 11,12 7 9,10 4 6 8 R1: 3.5k typ R2: 200 typ Characteristic curves IC-VCE Characteristics (Typical) 2.5 2m hFE-IC Characteristics (Typical) 10000 hFE-IC Temperature Characteristics (Typical) 10000 5000 C 25 =1 5C 7 Ta C 25 C 0 -3 (VCE=4V) typ (VCE=4V) IB=10mA A A 1m 2.0 0.6 mA m 0.4 A 5000 1.5 0 A .3m IC (A) hFE hFE 0.1 0.5 1 2.5 1000 500 1000 500 1.0 0.5 100 100 50 0.03 0.05 0 0 1 2 3 4 5 6 50 0.03 0.05 0.1 0.5 1 2.5 VCE (V) IC (A) IC (A) VCE(sat)-IC Temperature Characteristics (Typical) 3 VCE(sat)-IB Characteristics (Typical) 3 IC-VBE Temperature Characteristics (Typical) 2.5 (IC / IB=1000) (VCE=4V) 2.0 Ta=125C VCE (sat) (V) VCE (sat) (A) 2 75C 25C -30C 2 IC=2A IC (A) 1.5 1A 1.0 1 1 0.5A 0.5 0 0.2 0.5 1 2.5 0 0.1 0.5 1 5 10 50 100 0 0 1 Ta= 125 75C C 25C -30C 2 3 IC (A) IB (mA) VBE (V) j-a-PW Characteristics 50 3 4 3 2 PT-Ta Characteristics 5 1-1 Chip Operation 2-2 Chip Operation 3-3 Chip Operation 4-4 Chip Operation Safe Operating Area (SOA) 10 0 S S 1m mS 10 j-a (C / W) 2 1 PT (W) IC (A) 10 1 0.5 5 1 Single Pulse 0.1 Without Heatsink Ta=25C 1 1 5 10 50 100 500 1000 0 0 50 100 150 0.05 3 5 10 50 100 PW (mS) Ta (C) VCE (V) 162 |
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