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| SHINDENGEN Schottky Rectifiers (SBD) Dual S25SC6M 60V 25A FEATURES *oe Tj150*Z *oe PRRSM avalanche guaranteed *oe Small AE jc *oe High current capacity APPLICATION *oe Switching power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommunication OUTLINE DIMENSIONS Case : MTO-3P Unit : mm RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40*150 Z * Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage V RM 60 V V Pulse width Repetitive Peak Surge Reverse Voltage 0.5ms, duty 1/40 RRSM 65 V Average Rectified Forward Current wave, R-load, Rating for each diode Io/2, Tc IO 50Hz sine 25 A Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle300 value, Tj= peak A Repetitive Peak Surge Reverse Power 10Es, Rating of per diode, Tj=25*Z P Pulse width RRSM 660 W Mounting Torque F TOR(Recommended torque* 0.5Nm) 0.8 Nm *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Forward Voltage V I=12.5A, Pulse measurement, Rating of per diode FF Max.0.58 V Reverse Current IR V=V M,Pulse measurement, Rating ofMax.diode RR per 10 mA =10V, Junction Capacitance Cj f=1MHz, V Rating of per diode Typ.490pF R Thermal Resistance j AEjcunction to case Max.1.0 Z/W * Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd S25SC6M Forward Voltage 10 Forward Current IF [A] Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] 1 Tc=25C [TYP] Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] S25SC6M Junction Capacitance f=1MHz Tc=25C TYP per diode Junction Capacitance Cj [pF] 1000 100 0.1 1 10 Reverse Voltage VR [V] S25SC6M 1000 Reverse Current Tc=150C [MAX] Tc=150C [TYP] 100 Tc=125C [TYP] Reverse Current IR [mA] Tc=100C [TYP] 10 Tc=75C [TYP] 1 Pulse measurement per diode 0.1 0 10 20 30 40 50 60 Reverse Voltage VR [V] S25SC6M 80 70 Reverse Power Dissipation Reverse Power Dissipation PR [W] 60 50 40 30 20 DC D=0.05 0.1 0.2 0.3 0.5 SIN 10 0 0.8 0 10 20 30 40 50 60 70 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T S25SC6M 25 Forward Power Dissipation DC D=0.8 Forward Power Dissipation PF [W] 20 SIN 0.3 15 0.1 0.05 10 0.2 0.5 5 0 0 5 10 15 20 25 30 35 40 Average Rectified Forward Current IO [A] Tj = 150C IO 0 tp D=tp /T T S25SC6M 50 Derating Curve Average Rectified Forward Current IO [A] 40 DC D=0.8 30 0.5 SIN 0.3 20 0.2 0.1 10 0.05 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] VR = 30V 0 0 IO VR tp D=tp /T T S25SC6M 400 Peak Surge Forward Capability IFSM 350 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] 300 non-repetitive, sine wave, Tj=125C before surge current is applied 250 200 150 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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