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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5555/D JFET Switching N-Channel -- Depletion 3 GATE 1 DRAIN 2N5555 2 SOURCE MAXIMUM RATINGS Rating Drain - Source Voltage Drain - Gate Voltage Gate - Source Voltage Forward Gate Current Total Device Dissipation @ TC = 25C Derate above 25C Junction Temperature Range Storage Temperature Range Symbol VDS VDG VGS IGF PD TJ Tstg Value 25 25 25 10 350 2.8 - 65 to +150 - 65 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C C C 1 2 3 CASE 29-04, STYLE 5 TO-92 (TO-226AA) ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Gate - Source Breakdown Voltage (IG = 10 Adc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) Drain Cutoff Current (VDS = 12 Vdc, VGS = - 10 V) Drain Cutoff Current (VDS = 12 Vdc, VGS = - 10 V, TA = 100C) V(BR)GSS IGSS ID(off) 25 -- -- -- -- 1.0 10 2.0 Vdc nAdc nAdc Adc ON CHARACTERISTICS Zero - Gate -Voltage Drain Current(1) (VDS = 15 Vdc, VGS = 0) Gate-Source Forward Voltage (IG(f) = 1.0 mAdc, VDS = 0) Drain-Source On-Voltage (ID = 7.0 mAdc, VGS = 0) Static Drain-Source On Resistance (ID = 0.1 mAdc, VGS = 0) IDSS VGS(f) VDS(on) rDS(on) 15 -- -- -- -- 1.0 1.5 150 mAdc Vdc Vdc Ohms SMALL- SIGNAL CHARACTERISTICS Small-Signal Drain-Source "ON" Resistance (VGS = 0, ID = 0, f = 1.0 kHz) Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 0, VGS = 10 Vdc, f = 1.0 MHz) rds(on) Ciss Crss -- -- -- 150 5.0 1.2 Ohms pF pF SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time (VDD = 10 Vdc, ID(on) = 7.0 mAdc, () VGS(on) = 0, VGS(off) = -10 Vdc) (See Figure 1) 0 10 Vd ) (S Fi (VDD = 10 Vdc, ID(on) = 7.0 mAdc, () VGS(on) = 0, VGS(off) = -10 Vdc) (See Figure 1) 0 10 Vd ) (S Fi td(on) tr td(off) tf -- -- -- -- 5.0 5.0 15 10 ns ns ns ns 1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 3.0%. Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1997 1 2N5555 PULSE WIDTH VDD 1.0 k 10 k PULSE GENERATOR (50 OHMS) 50 OHM COAXIAL CABLE 1.0 k 50 Rin = 50 OHMS td(on) OUTPUT INPUT PULSE RISE TIME < 1.0 ns FALL TIME < 1.0 ns NOMINAL VALUE OF "ON" PULSE WIDTH = 400 ns DUTY CYCLE 1.0% GENERATOR SOURCE IMPEDANCE = 50 OHMS 10% 90% tr 90% tf td(off) 10% 50 OHM COAXIAL CABLE TEKTRONIX 567 SAMPLING SCOPE INPUT 50% 10% 90% 90% 50% 10% VGS(on) VGS(off) INPUT PULSE RISE TIME INPUT PULSE FALL TIME Figure 1. Switching Times Test Circuit POWER GAIN 24 f = 100 MHz 20 PG , POWER GAIN (dB) 16 12 400 MHz Tchannel = 25C VDS = 15 Vdc VGS = 0 V 0 2.0 4.0 6.0 8.0 10 ID, DRAIN CURRENT (mA) 12 14 8.0 4.0 Figure 2. Effects of Drain Current Reference Designation NEUTRALIZING COIL INPUT TO 50 SOURCE C1 C5 Rg L3 C6 VGS COMMON VDS +15 V L1 C2 C4 CASE C7 ID = 5.0 mA C3 TO 500 LOAD C1 C2 C3 C4 C5 C6 C7 L1 L2 L3 VALUE 100 MHz 7.0 pF 1000 pF 3.0 pF 1-12 pF 1-12 pF 0.0015 F 0.0015 F 3.0 H* 0.15 H* 0.14 H* 400 MHz 1.8 pF 17 pF 1.0 pF 0.8-8.0 pF 0.8-8.0 pF 0.001 F 0.001 F 0.2 H** 0.03 H** 0.022 H** L2 Adjust VGS for ID = 50 mA VGS < 0 Volts *L1 NOTE: The noise source is a hot-cold body (AIL type 70 or equivalent) with a test receiver (AIL type 136 or equivalent). **L1 *L2 *L3 17 turns, (approx. -- depends upon circuit layout) AWG #28 enameled copper wire, close wound on 9/32 ceramic coil form. Tuning provided by a powdered iron slug. 4-1/2 turns, AWG #18 enameled copper wire, 5/16 long, 3/8 I.D. (AIR CORE). 3-1/2 turns, AWG #18 enameled copper wire, 1/4 long, 3/8 I.D. (AIR CORE). **L2 **L3 6 turns, (approx. -- depends upon circuit layout) AWG #24 enameled copper wire, close wound on 7/32 ceramic coil form. Tuning provided by an aluminum slug. 1 turn, AWG #16 enameled copper wire, 3/8 I.D. (AIR CORE). 1/2 turn, AWG #16 enameled copper wire, 1/4 I.D. (AIR CORE). Figure 3. 100 MHz and 400 MHz Neutralized Test Circuit 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data 2N5555 NOISE FIGURE (Tchannel = 25C) 10 ID = 5.0 mA 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5.5 6.5 VDS = 15 V VGS = 0 V 6.0 f = 400 MHz 4.0 4.5 f = 400 MHz 3.5 2.0 0 0 100 MHz 2.0 4.0 6.0 8.0 10 12 14 16 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 18 20 2.5 1.5 0 2.0 100 MHz 4.0 6.0 8.0 10 ID, DRAIN CURRENT (mA) 12 14 Figure 4. Effects of Drain-Source Voltage Figure 5. Effects of Drain Current INTERMODULATION CHARACTERISTICS + 40 Pout , OUTPUT POWER PER TONE (dB) + 20 0 - 20 - 40 - 60 - 80 - 100 - 120 - 140 - 160 - 120 FUNDAMENTAL OUTPUT @ IDSS, 0.25 IDSS - 100 3RD ORDER IMD OUTPUT @ IDSS, 0.25 IDSS VDS = 15 Vdc f1 = 399 MHz f2 = 400 MHz 3RD ORDER INTERCEPT - 80 - 60 - 40 - 20 Pin, INPUT POWER PER TONE (dB) 0 + 20 Figure 6. Third Order Intermodulation Distortion Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 2N5555 COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25C) grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) 30 20 10 7.0 5.0 3.0 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 0.3 10 20 30 bis @ IDSS 5.0 3.0 2.0 brs @ IDSS 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 grs @ IDSS, 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.25 IDSS gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos) gis @ IDSS bis @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 7. Input Admittance (yis) Figure 8. Reverse Transfer Admittance (yrs) gfs, FORWARD TRANSCONDUCTANCE (mmhos) |b fs|, FORWARD SUSCEPTANCE (mmhos) 20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 |bfs| @ IDSS |bfs| @ 0.25 IDSS gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos) 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 gos @ 0.25 IDSS gos @ IDSS bos @ IDSS and 0.25 IDSS gfs @ IDSS gfs @ 0.25 IDSS Figure 9. Forward Transadmittance (yfs) Figure 10. Output Admittance (yos) 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data 2N5555 COMMON SOURCE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) 30 40 20 10 0 1.0 350 100 100 0.9 50 300 0.8 60 70 80 90 100 110 120 0.7 ID = IDSS 500 400 600 500 600 0.6 800 900 700 900 700 800 280 270 260 250 240 80 90 100 110 120 290 70 400 300 200 100 270 260 250 240 0.0 280 300 60 600 800 700 500 0.1 200 340 330 320 40 30 20 10 0 0.4 350 340 330 320 ID = 0.25 IDSS 200 300 0.3 400 310 50 ID = IDSS, 0.25 IDSS 900 0.2 300 290 310 130 230 130 230 140 150 160 170 180 190 200 210 220 140 150 160 170 180 190 200 210 220 Figure 11. S11s 30 40 20 10 0 350 340 330 320 40 30 20 Figure 12. S12s 10 0 350 340 330 100 200 ID = 0.25 IDSS 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8 320 0.6 50 0.5 60 70 80 90 100 110 120 900 800 700 600 500 400 300 ID = IDSS 240 200 100 0.5 230 0.6 130 120 800 700 600 ID = 0.25 IDSS 500 400 300 200 100 0.4 250 110 0.3 900 0.3 280 270 260 80 90 100 0.4 300 290 60 70 310 50 310 300 0.7 290 280 270 260 250 240 0.6 130 230 140 150 160 170 180 190 200 210 220 140 150 160 170 180 190 200 210 220 Figure 13. S21s Motorola Small-Signal Transistors, FETs and Diodes Device Data Figure 14. S22s 5 2N5555 COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25C) grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) 20 gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 20 30 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 gig @ IDSS, 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.25 IDSS brg @ IDSS gig @ IDSS grg @ 0.25 IDSS big @ IDSS big @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.007 0.005 Figure 15. Input Admittance (yig) Figure 16. Reverse Transfer Admittance (yrg) gfg , FORWARD TRANSCONDUCTANCE (mmhos) bfg , FORWARD SUSCEPTANCE (mmhos) gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 30 bfg @ IDSS gfg @ IDSS gfg @ 0.25 IDSS 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 bog @ IDSS, 0.25 IDSS gog @ IDSS brg @ 0.25 IDSS gog @ 0.25 IDSS 0.01 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 17. Forward Transfer Admittance (yfg) Figure 18. Output Admittance (yog) 6 Motorola Small-Signal Transistors, FETs and Diodes Device Data 2N5555 COMMON GATE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) 30 40 20 10 0 0.7 100 0.6 50 100 0.5 60 ID = IDSS 70 80 90 100 110 120 0.4 200 300 400 500 600 900 700 0.3 800 900 280 270 260 250 240 80 90 100 ID = IDSS 110 120 700 800 0.02 900 130 230 130 900 0.03 230 600 100 500 600 700 800 240 ID = 0.25 IDSS 0.01 0.0 280 270 260 250 ID = 0.25 IDSS 200 300 400 500 600 700 800 290 70 0.01 290 0.02 300 60 300 310 50 0.03 310 350 340 330 320 40 30 20 10 0 0.04 350 340 330 320 140 150 160 170 180 190 200 210 220 140 150 160 170 0.04 180 190 200 210 220 Figure 19. S11g Figure 20. S12g 30 40 20 10 0 0.5 350 340 330 320 40 30 20 10 0 1.5 1.0 100 350 300 200 400 340 500 700 600 800 330 320 100 0.4 50 0.3 60 70 80 0.1 90 900 100 110 120 260 250 240 100 110 120 900 270 90 0.2 ID = 0.25 IDSS 300 290 280 60 70 80 100 ID = IDSS 310 50 0.9 900 310 ID = IDSS, 0.25 IDSS 0.8 300 0.7 290 280 270 260 250 240 0.6 130 230 130 230 140 150 160 170 180 190 200 210 220 140 150 160 170 180 190 200 210 220 Figure 21. S21g Motorola Small-Signal Transistors, FETs and Diodes Device Data Figure 22. S22g 7 2N5555 PACKAGE DIMENSIONS A R P SEATING PLANE B F L K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- XX G H V 1 D J C SECTION X-X N N DIM A B C D F G H J K L N P R V CASE 029-04 (TO-226AA) ISSUE AD STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 81-3-3521-8315 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 INTERNET: http://motorola.com/sps 8 2N5555/D Motorola Small-Signal Transistors, FETs and Diodes Device Data |
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