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LAPT
2SC3263
Application : Audio and General Purpose
(Ta=25C) 2SC3263 100max 100max 230min 50min 2.0max 60typ 250typ V pF
20.0min 4.0max
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1294) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3263 230 230 5 15 4 130(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=230V VEB=5V IC=25mA VCE=4V, IC=5A IC=5A, IB=0.5A VCE=12V, IE=-2A VCB=10V, f=1MHz
External Dimensions MT-100(TO3P)
5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Unit
A A
19.90.3
4.0
V
a b
o3.20.1
MHz
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4
hFE Rank O(50 to 100), Y(70 to 140)
sTypical Switching Characteristics (Common Emitter)
VCC (V) 60 RL () 12 IC (A) 5 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 500 IB2 (mA) -500 ton (s) 0.30typ tstg (s) 2.40typ tf (s) 0.50typ
5.450.1 B C E
5.450.1
Weight : Approx 6.0g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
0A 3.
V CE ( sat ) - IB Characteristics (Typical)
Collector-Emitter Saturation Voltage V CE(s a t)( V ) 3
IC - V BE Temperature Characteristics (Typical)
15 (V C E= 4V)
15
0 2.
A
5 1.
A
1.0
A
600 mA
Collector Current I C (A)
10
200m A
2
Collector Current I C( A)
400
mA
10
eT em p Tem ) p)
10 0m A
5
1
as
se
(C
Ca
5C
C(
25
5A 0 0
0
0
1
2
3
4
0
0.5
1.0
1.5
2.0
0
-30
I B= 20mA
12
C
1 Base-Emittor Voltage V B E( V)
(Ca
se
50mA
I C= 10A
5
Tem
p)
2
Collector-Emitter Voltage V C E( V)
Base Current I B( A)
(V C E= 4V) 200 DC Curr ent Gain h F E DC C urrent G ain h FE 200 125C 100 100
(V C E= 4V)
j - a( C/W)
hFE - IC Characteristics (Typical)
h FE - I C Temperature Characteristics (Typical)
j-a - t Characteristics
3
Typ
25C -30C
Transient Thermal Resistance
1 0.5
50
50
10 0.02
0.1
0.5
1
5
10 15
10 0.02
0.1
0.5
1
5
10 15
0.1
1
10
100 Time t(ms)
1000 2000
Collector C urrent I C( A)
Collector Current I C (A)
f T - IE Characteristics (Typical)
(V C E= 12V) 100 40
Safe Operating Area (Single Pulse)
130
P c - T a Derating
10
80 Cut- off F requ ency f T( MH Z) 10
m
Maxim um Power Di ssip ation P C( W)
s
100
W
Typ
60
Collector Curr ent I C (A)
DC
ith
5
In fin ite he at si nk
40
1 0.5 Without Heatsink Natural Cooling
50
20
Without Heatsink 0 -0.02 0.1 -0.1 -1 -10 3 10 100 300 Emitter Current I E( A) Collector-Emitter Voltage V C E( V) 3.5 0 0 25 50 75 100 125 150
Ambient Temperature Ta(C)
63

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