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| 2SC4388 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1673) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4388 200 180 6 15 4 85(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Audio and General Purpose (Ta=25C) 2SC4388 10max 10max 180min 50min 2.0max 20typ 300typ V MHz 16.2 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB hFE Rank Conditions VCB=200V VEB=6V IC=50mA VCE=4V, IC=3A IC=5A, IB=0.5A VCE=12V, IE=-0.5A VCB=10V, f=1MHz External Dimensions FM100(TO3PF) 0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 o3.30.2 1.6 Unit A 23.00.3 V 9.50.2 A a b pF 1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1 3.3 0.8 O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) 40 RL () 4 IC (A) 10 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 1 IB2 (A) -1 ton (s) 0.5max tstg (s) 1.8max tf (s) 0.6max 3.35 B C E Weight : Approx 6.5g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) 1A m 00 A VCE( sat ) - I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at)( V ) 3 IC - V BE Temperature Characteristics (Typical) 15 (V C E= 4V) 15 7 0 50 mA 300m A Collector Current I C (A) Collector Current I C( A) 20 0m A 10 2 10 100 mA mp) e Te Cas C ( 25C IB=20mA IC=10A 5A 0 0 0.5 1.0 Base Current I B( A) 1.5 2.0 0 0 0 0 1 2 3 4 -30C 125 (Case 5 50mA 1 5 (Cas e Te 1 Base-Emittor Voltage V B E( V) Temp) mp) Collector-Emitter Voltage V C E( V) (VCE=4V) 300 DC Curr ent Gain h F E DC Cur rent Gain h FE 200 125C 100 25C (V C E= 4V) j-a(C/W) h FE - I C Characteristics (Typical) h FE - IC Temperature Characteristics (Typical) j-a - t Characteristics 3 Transient Thermal Resistance 100 Typ 1 0.5 50 50 -30C 20 0.02 0.1 0.5 1 5 10 15 20 0.02 0.1 0.5 1 5 10 15 0.1 1 10 100 Time t(ms) 1000 2000 Collector Current I C( A) Collector Current I C( A) fT - IE Characteristics (Typical) (VCE=12V) 30 40 Safe Operating Area (Single Pulse) 100 10 m P c - T a Derating 10 Cut- off F req uency f T( M H Z) Collect or Cur ren t I C( A) DC s Maxim um Power Dissipation P C( W) Typ 10 s 0m 80 20 5 60 1 0.5 Without Heatsink Natural Cooling 0.1 40 10 20 Without Heatsink 0 25 50 75 100 125 150 0 -0.02 -0.1 -1 Emitter Current I E( A) -10 0.05 3 5 10 50 100 200 3.5 0 Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 102 3.0 2 W ith In fin ite he at si nk |
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