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BSM 200 GB 120 DL
IGBT Power Module Preliminary data * Low Loss IGBT * Low inductance halfbridge * Including fast free- wheeling diodes * Package with insulated metal base plate Type BSM 200 GB 120 DL Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V
VCE
IC
Package HALF-BRIDGE 2
Ordering Code C67076-A2300-A70
1200V 340A
VCE VCGR VGE IC
RGE = 20 k
Gate-emitter voltage DC collector current
20 A 340 200
TC = 25 C TC = 80 C
Pulsed collector current, tp = 1 ms
ICpuls
680 400
TC = 25 C TC = 80 C
Power dissipation per IGBT
Ptot
1400
W + 150 -40 ... + 125 0.09 0.18 2500 20 11 F 40 / 125 / 56 sec Vac mm K/W C
TC = 25 C
Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJCD Vis
-
Semiconductor Group
1
Feb-14-1997
BSM 200 GB 120 DL
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.2 2.5 6.5 2.6 3
V
VGE = VCE, IC = 8 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 200 A, Tj = 25 C VGE = 15 V, IC = 200 A, Tj = 125 C
Zero gate voltage collector current
ICES
10 -
mA
VCE = 1200 V, VGE = 0 V, Tj = 25 C VCE = 1200 V, VGE = 0 V, Tj = 125 C
Gate-emitter leakage current
IGES
400
nA
VGE = 20 V, VCE = 0 V
AC Characteristics Transconductance
gfs
110 13 2 1 -
S nF -
VCE = 20 V, IC = 200 A
Input capacitance
Ciss Coss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Semiconductor Group
2
Feb-14-1997
BSM 200 GB 120 DL
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time Values typ. max. Unit
td(on)
160 -
ns
VCC = 600 V, VGE = 15 V, IC = 200 A RGon = 4.7
Rise time
tr
80 -
VCC = 600 V, VGE = 15 V, IC = 200 A RGon = 4.7
Turn-off delay time
td(off)
550 -
VCC = 600 V, VGE = -15 V, IC = 200 A RGoff = 4.7
Fall time
tf
90 -
VCC = 600 V, VGE = -15 V, IC = 200 A RGoff = 4.7
Free-Wheel Diode Diode forward voltage
VF
2.3 1.8 2.8 -
V
IF = 200 A, VGE = 0 V, Tj = 25 C IF = 200 A, VGE = 0 V, Tj = 125 C
Reverse recovery time
trr
0.5 -
s
IF = 200 A, VR = -600 V, VGE = 0 V diF/dt = -2000 A/s, Tj = 125 C
Reverse recovery charge
Qrr
C
IF = 200 A, VR = -600 V, VGE = 0 V diF/dt = -2000 A/s Tj = 25 C Tj = 125 C
10 25 -
Semiconductor Group
3
Feb-14-1997
BSM 200 GB 120 DL
Power dissipation Ptot = (TC) parameter: Tj 150 C
1500 W 1300
Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C
10 3
tp = 42.0s
A
100 s
Ptot
1200 1100 1000 900 800 700 600 500 400 300 200 100 0 0
IC
10 2
1 ms
10 1
10 ms
20
40
60
80
100
120
C
160
10 0 0 10
10
1
10
2
DC 3 10
V
TC
VCE
Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C
340 A 280
Transient thermal impedance Zth JC = (tp) parameter: D = tp / T
10 0 K/W 10 -1
IGBT
IC
ZthJC
240 200 10 -2
160 10 120
-3
D = 0.50 0.20 0.10 0.05
80
10 -4
0.02 single pulse 0.01
40 0 0 10 -5 -5 10
20
40
60
80
100
120
C
160
10
-4
10
-3
10
-2
10
-1
s 10
0
TC
tp
Semiconductor Group
4
Feb-14-1997
BSM 200 GB 120 DL
Typ. output characteristics
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 s, Tj = 25 C
400
IC = f (VCE)
parameter: tp = 80 s, Tj = 125 C
400
A
IC
300
17V 15V 13V 11V 9V 7V
A
IC
300
17V 15V 13V 11V 9V 7V
250
250
200
200
150
150
100
100
50 0 0
50 0 0
1
2
3
V
5
1
2
3
V
5
VCE
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 s, VCE = 20 V
400
A
IC
300
250
200
150
100
50 0 0
2
4
6
8
10
V 14 VGE
Semiconductor Group
5
Feb-14-1997
BSM 200 GB 120 DL
Typ. gate charge VGE = (QGate) parameter: IC puls = 200 A
20 V
Typ. capacitances
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
10 2
nF
VGE
16 14 12 10 8
C
600 V
800 V
10 1
Ciss
Coss 10 0 Crss
6 4 2 0 0 10 -1 0
200
400
600
800
1000
1400
5
10
15
20
25
30
QGate
V 40 VCE
Reverse biased safe operating area
Short circuit safe operating area
ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V
2.5
ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 25 nH
12
ICpuls/IC
ICsc/IC
8 1.5 6 1.0 4 allowed number of short circuit: <1000 time between short 2 circuit: >1s di/dt = 1000A/s 3000A/s 5000A/s
0.5
0.0 0 200 400 600 800 1000 1200 V 1600 VCE
0 0 200 400 600 800 1000 1200 V 1600 VCE
Semiconductor Group
6
Feb-14-1997
BSM 200 GB 120 DL
Typ. switching time
Typ. switching time
I = f (IC) , inductive load , Tj = 125C
par.: VCE = 600 V, VGE = 15 V, RG = 4.7
10 4
t = f (RG) , inductive load , Tj = 125C
par.: VCE = 600 V, VGE = 15 V, IC = 200 A
10 4
ns t 10 3 tdoff t
ns tdoff 10 3 tdon tr
tdon 10 2 tr tf 10 2 tf
10 1 0
100
200
300
A
500
10 1 0
10
20
30
40
IC
60
RG
Typ. switching losses
Typ. switching losses
E = f (IC) , inductive load , Tj = 125C
par.: VCE = 600 V, VGE = 15 V, RG = 4.7
130 mWs 110 E 100 90 80 70 60 50 40 30 20 10 0 0 Eoff Eon 100 200 300 A 500
E = f (RG) , inductive load , Tj = 125C
par.: VCE = 600V, VGE = 15 V, IC = 200 A
130 mWs 110 E 100 90 80 70 60 50 40 30 20 10 0 0 10 20 30 40 Eoff Eon
IC
60
RG
Semiconductor Group
7
Feb-14-1997
BSM 200 GB 120 DL
Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj
400
Transient thermal impedance Zth JC = (tp) parameter: D = tp / T
10 0
Diode
A
K/W
IF
300
ZthJC
10 -1
250
Tj=125C
200
Tj=25C
10 -2 D = 0.50 0.20
150 10 -3 single pulse 50 0 0.0 10 -4 -5 10
0.10 0.05 0.02 0.01
100
0.5
1.0
1.5
2.0
V
3.0
10
-4
10
-3
10
-2
10
-1
s 10
0
VF
tp
Semiconductor Group
8
Feb-14-1997
BSM 200 GB 120 DL
Circuit Diagram
Package Outlines Dimensions in mm Weight: 420 g
Semiconductor Group
9
Feb-14-1997

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