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| Differential Magnetoresistive Sensor FP 201 L 100 Features * Extremely high output voltage * 2 independently biased magnetic circuits * Robust housing * Signal amplitude independent of operating speed * Screw mounting possible Typical applications * Detection of speed * Detection of position * Detection of sense of rotation Dimensions in mm Type FP 201 L 100 Ordering Code Q65210-L101 The differential magnetoresistive sensor FP 201 L 100 consists of two magnetically biased magneto resistors made from L-type InSb/NiSb, which in their unbiased state each have a basic resistance of about 125 . They are series coupled as a voltage divider and are encapsuled in plastic as protection against mechanical stresses. This magnetically actuated sensor can be implemented as a direction dependent contactless switch where it shows a voltage change of about 1.3 V/mm in its linear region. Semiconductor Group 1 07.96 FP 201 L 100 Maximum ratings Parameter Operating temperature Storage temperature Power dissipation1) Supply voltage2) Insulation voltage between terminals and casing Thermal conductivity Symbol Value - 25 / + 100 - 25 / + 110 600 10 > 100 10 5 Unit C C mW V V mW/K mW/K TA Tstg Ptot VIN VI Gthcase GthA Characteristics (TA = 25 C) Nominal supply voltage Total resistance, ( = , I 1 mA) Center symmetry3) ( = ) Offset voltage4) (at VIN N and = ) Open circuit output voltage5) (VIN N and = 0.5 mm) Cut-off frequency VIN N R1-3 M V0 Vout pp fc 5 700...1400 10 130 > 2.2 >7 V % mV V kHz This sensor is operated by a permanent magnet. Using the arrangement as shown in Fig. 1, the permanent magnet increases the internal biasing field through the righthand side magneto resistor (connections 2-3), and reduces the field through the left side magneto resistor (connections 1-2). As a result the resistance value of MR2-3 increases while that of MR1-2 decreases. When the permanent magnet is moved from left to right the above-mentioned process operates in reverse. 1) Corresponding to diagram Ptot = f(Tcase) 2) Corresponding to diagram VIN = f(T) 3) R1 - 2 - R2 - 3 M = -------------------------------- x 100% for R1-2 > R2-3 - R1 - 2 4) Corresponding to measuring circuit in Fig. 3 5) Corresponding to measuring circuit in Fig. 3 and arrangement as shown in Fig. 2 Semiconductor Group 2 FP 201 L 100 Fig. 1 Sensor operating by external permanent magnet Fig. 2 Measuring arrangement with a permanent magnet Alnico 450 = 4 mm, 6 mm long Fig. 3 Measuring circuit and output waveform A steeper gradient is achieved when using a horseshoe magnet. Semiconductor Group 3 FP 201 L 100 Output voltage (typical) versus temperature VOUTpp = f(TA), = 0.5 mm = VOUTpp at TA = 25 C ^ 100% Output voltage (typical) versus airgap VOUTpp = f(), TA = 25 C = VOUTpp at = 0.5 mm ^ 100% Total resistance (typical) versus temperature R1-3 = f(TA), = Max. power dissipation versus temperature Ptot = f(T), = , T = Tcase, TA Semiconductor Group 4 FP 201 L 100 Maximum supply voltage versus temperature VIN = f(T), = , T = Tcase, TA 1) Sensor mounted with good thermal contact to a heat sink 2) Operation in still air Semiconductor Group 5 |
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