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| ADVANCE TECHNICAL INFORMATION Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 10P60 VDSS = -600 V = -10 A ID25 RDS(on) = 1 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJ TC = 25C TC = 25C TC = 25C Maximum Ratings -600 -600 20 30 -10 -40 -10 30 300 -55 ... +150 150 -55 ... +150 V V V V A A A mJ W C C C C TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain * International standard package * Low R HDMOS process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) TM DS (on) Features Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 JEDEC TO-247 AD 1.13/10 Nm/lb.in. 6 g * Low package inductance (<5 nH) - easy to drive and to protect rated Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. -600 -3.0 -5.0 100 TJ = 25C TJ = 125C -25 -1 1.0 V V nA A mA Advantages VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = -250 A V DS = VGS, ID = -250 A V GS = 20 VDC, VDS = 0 V DS = 0.8 VDSS V GS = 0 V V GS = -10 V, ID = 0.5 ID25 * High side switching * Push-pull amplifiers * DC choppers * Automatic test equipment * Easy to mount with 1 screw * Space savings * High power density (isolated mounting screw hole) (c) 2001 IXYS All rights reserved 98849 (8/01) IXTH 10P60 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 5 9 4700 V GS = 0 V, VDS = -25 V, f = 1 MHz 430 135 33 V GS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 4.7 (External) 27 85 35 160 V GS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 46 92 0.42 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain 1 2 3 TO-247 AD Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS V DS = -10 V; ID = ID25, pulse test Dim. Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions V GS = 0 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. -10 -40 -3 500 A A V ns Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, di/dt = 100 A/s IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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