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| (R) STTH102 HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) FEATURES AND BENEFITS s s 1A 200 V 175 C 0.78 V 20 ns s s Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature DO-41 STTH102 DESCRIPTION The STTH102, which is using ST's new 200V planar technology, is specially suited for switching mode base drive & transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(AV) IFSM Tstg Tj Parameter Repetitive peak reverse voltage Average forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Tl = 130C tp = 10 ms =0.5 Sinusoidal Value 200 1 50 - 65 + 175 + 175 Unit V A A C C THERMAL PARAMETERS Symbol Rth (j-a) Junction to ambient* Parameter Maximum 50 Unit C/W * On infinite heatsink with 10mm length. August 2001 - Ed: 2A 1/5 STTH102 STATIC ELECTRICAL CHARACTERISTICS Symbol IR* Parameter Reverse leakage current Tests conditions Tj = 25C Tj = 125C VF** Forward voltage drop Tj = 25C Tj = 125C Pulse test: * tp = 5ms, < 2% ** tp = 380s, < 2% Min. Typ. Max. 1 Unit A VR = VRRM 1 IF = 1A 0.68 25 0.97 0.78 V To evaluate the maximum conduction losses use the following equation : P = 0.65 x IF(AV) + 0.130 x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS Symbol trr tfr VFP Parameter Reverse recovery time Forward recovery time Forward recovery voltage Tests conditions IF = 0.5 A Irr = 0.25 A IR = 1A IF = 1 A dIF/dt = 50A/s VFR = 1.1 x VFmax Tj = 25C Tj = 25C Tj = 25C Min. Typ. 12 50 1.8 Max. 20 Unit ns ns V 2/5 STTH102 Fig. 1: Average forward power dissipation versus average forward current. PF(av)(W) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.00 0.25 0.50 0.75 T Fig. 2: Average forward current versus ambient temperature ( = 0.5). IF(av)(A) 1.2 Rth(j-a)=Rth(j-l) = 0.05 = 0.1 = 0.2 = 0.5 =1 1.0 0.8 0.6 0.4 0.2 Rth(j-a)=110C:W IF(av)(A) =tp/T 1.00 Tamb(C) tp 0.0 1.25 0 25 50 75 100 125 150 175 Fig. 3: Thermal resistance versus lead length. Fig. 4: Relative variation of thermal impedance junction ambient versus pulse duration (Printed circuit board epoxy FR4, LIeads = 10mm). Zth(j-a)/Rth(j-a) 1.0 Rth(C/W) 120 110 100 90 80 70 Rth(j-l) Rth(j-a) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 = 0.2 = 0.1 Single pulse = 0.5 60 50 40 30 20 10 0 5 10 15 20 25 T Lleads(mm) 0.1 0.0 tp(s) 1.E+00 1.E+01 =tp/T 1.E+02 tp 1.E-01 1.E+03 Fig. 5: current. IFM(A) 100.0 Forward voltage drop versus forward Fig. 6: Junction capacitance versus reverse voltage applied (typical values). C(pF) 100 F=1MHz Vosc=30mV Tj=25C Tj=125C (Maximum values) 10.0 Tj=125C (Typical values) Tj=25C (Maximum values) 10 1.0 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 VR(V) 1 1 10 100 1000 3/5 STTH102 Fig. 7: Reverse recovery time versus dIF/dt (90% confidence). trr(ns) 70 60 50 40 30 Tj=25C Tj=125C IF=1A VR=100V Tj=125C Fig. 8: Peak reverse recovery current versus dIF/dt (90% confidence). IRM(A) 3.5 3.0 2.5 2.0 1.5 Tj=25C Tj=125C IF=1A VR=100V Tj=125C 20 10 1.0 0.5 dIF/dt(A/s) 0 1 10 100 1000 dIF/dt(A/s) 0.0 1 10 100 1000 Fig. 9: Relative variations of dynamic parameters versus junction temperature. IRM; trr; Qrr[Tj]/IRM; trr; Qrr[Tj=25C] 3.5 IF=1A dIF/dt=200A/s VR=100V 3.0 Qrr 2.5 2.0 trr 1.5 IRM Tj(C) 1.0 25 50 75 100 125 150 175 4/5 STTH102 PACKAGE MECHANICAL DATA DO-41 DIMENSIONS C A C OB / REF. Millimeters Min. Max. 5.20 2.71 Inches Min. 0.160 0.080 1 Max. 0.205 0.107 A B OD / OD / 4.1 2 25.4 0.712 C D 0.863 0.028 0.034 Ordering code STTH102 STTH102RL s s Marking STTH102 STTH102 Package DO-41 DO-41 Weight 0.34 g 0.34 g Base qty 2000 5000 Delivery mode Ammopack Tape & reel Cooling method: by conduction (method A) Epoxy meets UL 94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5 |
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