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 Advance Product Information
Feb 4, 2000
18-27.5 GHz 1W Power Amplifier
TGA1135B
Key Features * 0.25 um pHEMT Technology * 14 dB Nominal Gain at 23GHz * 30 dBm Nominal P1dB * 38dBm OTOI typical * Typical 15dB Input/Output RL * Bias 6 - 7V @ 540 mA * On-chip power detector diode
Chip Dimensions 2.641 mm x 1.480 mm
Primary Applications * Point-to-Point Radio * Point-to-Multipoint Communications * Ka Band Sat-Com
TGA1135B Fixtured Amplifier Typical Small Signal Data Wafer 993150303, 6V/540mA
18 16 14 12 10 S21 (dB) 8 6 4 2 0 -2 -4 -6 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Frequency (GHz)
TGA1135B Nominal Output Power Wafer 993150303, Idq=540mA 32 31.5 31 30.5 P1dB (dBm) 30 29.5 29 28.5 28 27.5 27 16 17 18 19 20 21 22 23 24 25 26 27 28 29 Frequency (GHz)
Note: 1 dB of compression not reached on some parts at 27, 27.5 GHz
VD = 7V
VD = 6V
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
1
Advance Product Information
Feb 4, 2000
Measured small signal data
6V, 540mA
18 16 14 12 10 S21 (dB) 8 6 4 2 0 -2 -4 -6 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Frequency (GHz)
,
TGA1135B
S21
-5 -7 -9 -11
S11
S11 (dB)
-13 -15 -17 -19 -21 -23 -25 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Frequency (GHz)
-5 -7 -9 -11
S22
S22 (dB)
-13 -15 -17 -19 -21 -23 -25 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 2
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
Feb 4, 2000
TGA1135B
TGA1135B Nominal Output Power Wafer 993150303, Idq=540mA 32 31.5 31 30.5 P1dB (dBm) 30 29.5 29 28.5 28 27.5 27 16 17 18 19 20 21 22 23 24 25 26 27 28 29 Frequency (GHz)
Note: 1 dB of compression not reached on some parts at 27, 27.5 GHz
VD = 7V
VD = 6V
P1dB Measured Data
TGA1135B wafer 993150303 nominal performance TOI performance @ Pin SCL=7dBm: Vd=6V, Id=540mA, separation = 10MHz
43 42 41 40
TOI (dBm)
39 38 37 36 35 34 33 17 18 19 20 21 22 23 24 25 26 27 28
Frequency (GHz)
Output TOI Measured Data
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
3
Advance Product Information
Feb 4, 2000
TGA1135B
VG1
VG2
GND
DQ
VD DET OUT
Q1a 600m
Q2a 1200m Note: drains not connected on lot 9931503 PWR DET
RF IN
Q1b 600m
Q2b 1200m
RF OUT
Reference diode 2
Reference diode 1
REF3
GND
VG1
VG2
GND
DQ
VD Note: If drain bias is from one side only, maximum Id is 440mA
REF1
REF2
Note: no DC current allowed into the "DQ" pad
DC Schematic
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 4
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
Feb 4, 2000
TGA1135B
0.612: VG2
(180x100m)
0.875: DQ
1.253: VD
0.095
DET OUT 2.543 2.641 1.480 0.833 PWR DET
(175x100m)
0.686 RF IN
0.373 RF OUT 0.098 0.000 0.000 REF 1: 0.220 REF 3: 2.360 DQ: 0.875 VG2: 0.612
(180x100m)
VD: 1.253
Dimensions in mm RF I/O Pad: 200x100 mm DC Pads: 105x105 mm Die Area: 3.909 mm2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 5
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
REF 2: 2.543
Advance Product Information
Feb 4, 2000
TGA1135B TGA1135B built-in power detector
Vdet
100pF
Vbias
100pF
RF IN
RF OUT
TGA1135B with external test coupler
(amplifier bias connections not shown)
On-chip diode functions as envelope detector External coupler and DC bias required
10
EG1135B measured detector voltage offset vs output power with 20dB coupler: Vb=0.8V, f = 20GHz, Coupler loss is uncalibrated, 10K load
10K
Detector voltage (V)
1
Video out (Vdet)
EG1135B
External DC bias 50
C=2pF
0.1
RF OUT
0.01 8 10 12 14 16 18 20 Pout (dBm) 22 24 26 28 30 32
External coupler (-20dB)
RF OUT
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 6
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
Feb 4, 2000
TGA1135B
Vg (optional)
0.01F 0.01F DQ 100pF 100pF
Vd
Input TFN
Output TFN
100pF 100pF DQ 0.01F Notes: 1. 1F capacitor on gate, drain lines not shown but required 2. 0.01F capacitor may be connected to "DQ" port as shown, or may be included on drain line 3. Vg connection is recommended on both sides for devices operating at or above P1dB
Vg
0.01F
Vd
Chip Assembly and Bonding Diagram
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
7
Advance Product Information
Feb 4, 2000
Assembly Process Notes
Reflow process assembly notes: *= *= *= *= *= AuSn (80/20) solder with limited exposure to temperatures at or above 300C alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes: *= *= *= *= *= *= *= vacuum pencils and/or vacuum collets preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical
Interconnect process assembly notes: *= *= *= *= *= thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200C
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
8


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