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| VITESSE SEMICONDUCTOR CORPORATION Data Sheet VSC7810 Features * Integrated Photodetector/Transimpedance Amplifier Optimized for High-Speed Optical Communications Applications * Integrated AGC * Fibre Channel/Gigabit Ethernet Compatible Bandwidth (MHz) 1200 Photodetector/Transimpedance Amplifier Family for Optical Communication * High Bandwidth * Low Input Noise Equivalent Power * Large Optically Active Area * Single 5V Power Supply Part Number VSC7810 Data Rate Full Speed: 1.25Gb/s Input Noise (W rms) 0.45 Optically Active Area (m diameter) 100 General Description The VSC7810 integrated Photodetector/Transimpedance Amplifier provides a highly integrated solution for converting light from a fiber optic communications channel into a differential output voltage. The benefits of Vitesse Semiconductor's Gallium Arsenide H-GaAs process are fully utilized to provide very high bandwidth and low noise in a product with a large optically active area for easy alignment. The sensitivity, duty cycle distortion and jitter meet or exceed all Fibre Channel and Gigabit Ethernet application requirements. Parts are available in either die form, flat-windowed packages or in ball-lens packages. By using a metal-semiconductor-metal (MSM) photodetector with a monolithic integrated transimpedance amplifier, the input capacitance is lowered which allows for a larger optically active area than in discrete photodetectors. Integration also allows superior tracking over process, temperature and voltage between the photodetector and the amplifier, resulting in higher performance. This part can easily be used in developing Fibre Channel Electro-Optic Receivers which exhibit very high performance and ease of use. VSC7810 Block Diagram Photodetector/Transimpedance Amplifier +3.3V DOUTP DOUTN GND Both DOUTP and DOUTN are back-terminated to 25. G52145-0, Rev 4.1 04/05/01 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 1 VITESSE SEMICONDUCTOR CORPORATION Photodetector/Transimpedance Amplifier Family for Optical Communication Table 1: Electro-Optical Specifications(1) Symbol VSS IDD PSRR fC BW S RO VD RD VDC VDC NEPO VNO DCD IOUT PDJ Data Sheet VSC7810 Typ(2) 5.0 26 840 1200 -25 0.52 2.2 1.5 40 0.45 0.66 1.5 40 100 160 355 325 Parameter Supply Voltage Supply Current Power Supply Rejection Ratio Wavelength Low Frequency Cutoff Optical Modulation Bandwidth Sensitivity Single-Ended Output Impedance Differential Output Voltage Differential Responsivity Output Bias Voltage Bias Offset Voltage Input Noise Equivalent Power Output Noise Voltage Duty Cycle Distortion Output Drive Current Pattern Dependent Jitter Optically Active Area Min 4.5 13 35 700 800 -22 25 0.35 0.8 1.2 0.35 0.55 2.5 20 120 310 280 Max 5.5 40 850 1.8 1300 -27 60 0.65 2.5 150 0.93 0.75 4.5 8 60 200 400 370 Units V mA dB nm MHz MHz dBm V mV/W V mV W rms mV rms % mA ps m ps ps ps Conditions Frequencies up to 40MHz (includes external filter). -3dB, P = -15dBm @ 50MHz(4) -3dB, P = -15dBm @ 50MHz(4) 1.063Gb/s, BER10-12(3) P = -4.5dBm, RLOAD = 100 differential RLOAD = 100 P = -15dBm @ 50MHz P = 0mW(5) P = 0mW(5) P = -4.5dBm P = -4.5dBm +/-10% Voltage Window Diameter P = -5dBm 20%-80% P = -4.5dBm 20%-80% P = -4.5dBm PPJ tR tF PP Jitter Rise Time Fall Time Notes: (1) Specified over 0C (ambient) to 70C (case). (2) Typical conditions 25C and 3.3V power supply. (3) See Note 1 in Application Note 48. (4) P = Incident Optical Power (5) See Note 2 in Application Note 48. Page 2 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com G52145-0, Rev 4.1 04/05/01 VITESSE SEMICONDUCTOR CORPORATION Data Sheet VSC7810 Photodetector/Transimpedance Amplifier Family for Optical Communication Figure 1: Amplifude vs. Frequency 1 096.795 514 MHz 21 3 Amplitude 1 000.150 1 999.700 Frequency (MHz) Frequency response of VSC7810WB upper 3db frequency is measured with respect to response at 50 MHz Table 2: Absolute Maximum Ratings Symbol VSS TSTG HSTG HOP PINC IS Parameter Power Supply Storage Temperature Storage Humidity Operating Humidity Incident Optical Power Impact Shock Limits 6V -55C to 125C (case temperature under bias) 5 to 95% R.H. (including condensation) 8 to 80% R.H. (excluding condensation) +3dBm 500 G. Half Sine Wave Pulse Duration 1 +/-0.5 ms 3 blows in each direction 20 > 2000 > 20 Hz, 10 Minutes 10 G. Peak Acceleration 4 Complete Cycles, 3 Perpendicular Axes 1500V VIB VESD Vibration ESD Voltage on DOUTP, DOUTN, VSS, GND Table 3: Recommended Operating Conditions Symbol VSS TOP Parameter Power Supply Operating Temperature Limits 4.5V to 5.5V (5V nominal) 0C (ambient) to 70 C (case) normal range and 90C (case) extended range(1) NOTE: (1) See Note 1 in "Notes on Measurement Conditions & Applications" section of this data sheet for extended temperature range operation. G52145-0, Rev 4.1 04/05/01 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 3 VITESSE SEMICONDUCTOR CORPORATION Photodetector/Transimpedance Amplifier Family for Optical Communication Data Sheet VSC7810 Description Table 4: Pin Table Specifications for Ball Lens Packages, Flat Window Packages and Bare Die Symbol DOUTP DOUTN VSS GND Data output normal (with reference to incident light) Data output complement (inverting, with reference to incident light) Power supply Ground (package case) Note: Pin Diagram is identical for both TO-46 and TO-56 package styles. Figure 2: Pin Diagram VSS DOUTP DOUTN GND Bottom View Figure 3: Schematic View of Bare Die Pad Assignments GND DOUTN GND DOUTP GND VSS Page 4 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com G52145-0, Rev 4.1 04/05/01 VITESSE SEMICONDUCTOR CORPORATION Data Sheet VSC7810 Photodetector/Transimpedance Amplifier Family for Optical Communication Temperature Dependence of Operating Parameters This section describes the dependence of important operating parameters shown in Table 1 as a function of die (or equivalently junction) tempeature and power supply. In order to relate the die temperature to an equivalent case temperature, the following thermal characteristics of the package are provided (note that the thermal conductivity is identical for TO-46 and TO-56 package styles. Table 5: Thermal Resistance Calculation for TO-56 and TO-46 Packages Chip Size Chip Area A Die Height (TDIE) Epoxy Thickness (TEPOXY) Header Thickness (THEADER) (Average for TO-46 and TO-56 package) 0.168cm x 0.104cm 0.015cm 2 Thermal Path 0.066cm 0.0076cm 0.115cm TJ GaAs EXPOXY Thermal Conductivities K GaAs K epoxy K kovar 0.55W/cm C 0.0186W/cm C 0.17W/cm C KOVAR TC GaAs epoxy kovar = Tdie KGaAsA Tepoxy KepoxyA Tkovar KkovarA = 0.066 0.55 x 0.015 = 8 C/W = = 0.0076 0.0186 x 0.015 = 27.24 C/W = = 0.12 0.17 x 0.015 = 47 C/W JC = Thermal Resistance from Junction to Case = (8 + 27.24 + 47) = 82.24 C/W Example: For VSC7810 at nominal supply current of 25mA and Vss = 5V Temperature rise from junction to case = 0.025A x 5V x 82.24 C/W = 10.28 C G52145-0, Rev 4.1 04/05/01 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 5 VITESSE SEMICONDUCTOR CORPORATION Photodetector/Transimpedance Amplifier Family for Optical Communication Data Sheet VSC7810 Bandwidth vs. Die Temperature 1400 Typical Operating Characteristics IDD vs. Die Temperature 35 33 -3dB Bandwidth (MHz) 31 Supply Current (mA) 29 27 25 23 21 19 17 15 10 25 50 Die Temperature ( C) Responsitivity vs. Die Temperature (Small-Signal Optical Responsitivity at 850nm) 3.00 2.80 Responsitivity (mV/W) 2.60 RMS Jitter (ps) 2.40 2.20 2.00 1.80 1.60 1.40 1.20 1.00 10 25 50 Die Temperature ( C) 80 100 0 10 25 50 Die Temperature ( C) RMS Differential Output Noise Voltage vs. Die Temperature RMS Differential Output Noise Voltage (V) 1.00 0.90 0.80 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0.00 10 25 50 Die Temperature ( C) 80 100 4.5V 5V 5.5V 80 100 4.5V 5V 10 5.5V 60 50 5V 40 30 5.5V 20 4.5V 80 100 800 10 25 50 Die Temperature ( C) 80 100 4.5V 5V 5.5V 1300 5.5V 1200 1100 4.5V 1000 900 5V RMS Jitter with PRBS7 Data vs. Die Temperature Duty-Cycle Distortion vs. Die Temperature 55 54 Duty-Cycle Distortion (%) 53 52 51 50 49 48 47 46 45 10 25 50 Die Temperature ( C) 80 100 5V 4.5V 5.5V Page 6 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com G52145-0, Rev 4.1 04/05/01 VITESSE SEMICONDUCTOR CORPORATION Data Sheet VSC7810 Photodetector/Transimpedance Amplifier Family for Optical Communication Figure 4: Eye Diagram 229mV 46mV /div not trig'd -231mV 39.34ns 15.56mV Top -23.1mV Btm 39.91ns Lft Rgt 40.55ns Mean 40.23ns RMS 25.98ps PkPk 146.4ps Hits 6505 183ps/div 1 66.349% 2 97.54% 3 100% Wfms 1377 41.17ns Left 39.90521ns Right 40.54571ns G52145-0, Rev 4.1 04/05/01 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 7 VITESSE SEMICONDUCTOR CORPORATION Photodetector/Transimpedance Amplifier Family for Optical Communication Data Sheet VSC7810 Notes on Measurement Conditions and Applications Note 1: Noise Measurement Method The VSC7810 is specified to operate in the following two ranges of temperature: (a) "normal" from 0C (ambient) to 70C (case) and (b) "Extended" from 0C (ambient) to 90C (case). In the extended range, the operating parameters are specified in Table 6. Table 6: Specifications Under Extended Temperature Range of Operation Symbol BW Parameter Optical Modulation Bandwidth Min 800 Typ(2) 900 Max - Units MHz Conditions -3dB, P= -15dBm @ 50MHz Note 2: Noise Measurement Method 3GHz BW Hybrid Coupler P1 DUT Board P2 Power Meter HP 437B with 8481D Power Sensor RMS Output Noise The noise voltage, (Vn), is calculated from the Output Noise Power, (Pn), into 50. Vn = Pn * 50 The noise voltage, Vn, at the output is referred back to the noise power at the input through the responsivity R (with R in volts/watts) Vn NEP = -----R The bit error rate can be expressed as: BER = e (-Q2/2) . 2Q where , - 12 For a BER = 1 x10 , the parameter Q = 7. - 12 The sensitivity(s) at a bit error rate of 1 x10 is calculated as follows: S = 10 log10 NEP (Q 1mW ) , where the NEP is in units of milliwatts and S is in dBm, respectively. Page 8 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com G52145-0, Rev 4.1 04/05/01 VITESSE SEMICONDUCTOR CORPORATION Data Sheet VSC7810 Note 3: Measurement Setup for Frequency Response Photodetector/Transimpedance Amplifier Family for Optical Communication Lightwave Component Analyzer HP8702 Hybrid Coupler DC1 AC1 Bias T AC2 Bias T Laser Optical Attenuator DC2 DUT Power Supply Note 4: Bias T Schematic DC Out Signal AC Out G52145-0, Rev 4.1 04/05/01 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 9 VITESSE SEMICONDUCTOR CORPORATION Photodetector/Transimpedance Amplifier Family for Optical Communication Data Sheet VSC7810 Package Information Individual Die 0.1 (4x) 0.365 (4x) 0.055 (6x) 0.11 0.42 (4x) 0.055 (4x) 0.11 DOUTP DOUTN GND (2x) 0.74 GND 1.68 1.58 1.48 VSC7809 (2x) 0.29 0.35 VSS GND 0.05 0.05 (2x) 0.247 (2x) 0.1235 (2x) 0.18 0.05 0.05 0.835 0.94 1.04 0.05 Page 10 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com G52145-0, Rev 4.1 04/05/01 (2x) 0.15 VITESSE SEMICONDUCTOR CORPORATION Data Sheet VSC7810 TO-56 Flat Window Package Photodetector/Transimpedance Amplifier Family for Optical Communication Reference Isometric G52145-0, Rev 4.1 04/05/01 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 11 VITESSE SEMICONDUCTOR CORPORATION Photodetector/Transimpedance Amplifier Family for Optical Communication Data Sheet VSC7810 TO-46 Ball Lens Package--7mm Lead Length Reference Isometric Page 12 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com G52145-0, Rev 4.1 04/05/01 VITESSE SEMICONDUCTOR CORPORATION Data Sheet VSC7810 TO-46 Ball Lens Package--13mm Lead Length Photodetector/Transimpedance Amplifier Family for Optical Communication Reference Isometric G52145-0, Rev 4.1 04/05/01 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 13 VITESSE SEMICONDUCTOR CORPORATION Photodetector/Transimpedance Amplifier Family for Optical Communication Data Sheet VSC7810 Page 14 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com G52145-0, Rev 4.1 04/05/01 |
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