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(R)
BTA40 and BTA/BTB41 Series
40A TRIACS
STANDARD
MAIN FEATURES:
Symbol IT(RMS) V DRM/VRRM IGT (Q1) Value 40 600 and 800 50 Unit A V mA
G
G
A2
A1
A1 A2
DESCRIPTION Available in high power packages, the BTA/ BTB40-41 series is suitable for general purpose AC power switching. They can be used as an ON/ OFF function in applications such as static relays, heating regulation, water heaters, induction motor starting circuits, welding equipment... or for phase control operation in high power motor speed controllers, soft start circuits... Thanks to their clip assembly technique, they provide a superior performance in surge current handling capabilities. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500 V RMS) complying with UL standards (File ref.: E81734). ABSOLUTE MAXIMUM RATINGS
Symbol IT(RMS) RMS on-state current (full sine wave) Parameter
RD91 (BTA40)
A2
A1 A2
G
A1 A2
G
TOP3 Insulated (BTA41)
TOP3 (BTB41)
Value RD91 TOP3 TOP3 Ins. F = 60 Hz F = 50 Hz tp = 10 ms F = 120 Hz tp = 10 ms tp = 20 s Tj = 125C Tj = 25C Tj = 125C Tj = 125C Tc = 80C Tc = 70C t = 16.7 ms t = 20 ms 420 400 1120 50 V DRM/VRRM
+ 100
Unit A
40 A
ITSM It dI/dt
Non repetitive surge peak on-state current (full cycle, Tj initial = 25C) I t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr 100 ns
As A/s V A W C 1/6
VDSM/VRSM Non repetitive surge peak off-state voltage IGM PG(AV) Tstg Tj Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range
8 1 - 40 to + 150 - 40 to + 125
September 2000 - Ed: 3
BTA40 and BTA/BTB41 Series
ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)
Symbol IGT (1) VD = 12 V VGT V GD IH (2) IL dV/dt (2) VD = VDRM R L = 3.3 k IT = 500 mA IG = 1.2 IGT VD = 67 % VDRM gate open Tj = 125C Tj = 125C I - III - IV II MIN. MIN. (dV/dt)c (2) (dI/dt)c = 20 A/ms Tj = 125C Test Condition s R L = 33 Quadrant I - II - III IV ALL ALL MAX. MAX. MIN. MAX. MAX. Value 50 100 1.3 0.2 80 70 160 500 10 V/s V/s Unit mA V V mA mA
STATIC CHARACTERISTICS
Symbol VTM (2) Vto (2) Rd (2) I DRM I RRM
Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1
Test Conditions ITM = 60 A tp = 380 s Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C MAX. MAX. MAX. MAX.
Value 1.55 0.85 10 5 5
Unit V V m A mA
Threshold voltage Dynamic resistance VDRM = VRRM
THERMAL RESISTANCES
Symbol Rth(j-c) Junction to case (AC) Parameter RD91 (Insulated) TOP3 TOP3 Insulated R th(j-a) Junction to ambient TOP3 TOP3 Insulated Value 0.9 1.2 50 C/W Unit C/W
PRODUCT SELECTOR
Voltage (xxx) Part Number 600 V BTA40-xxxB BTA/BTB41-xxxB
BTB: Non insulated TOP3 package
Sensitivity 800 V X X 50 mA 50 mA
Type
Package RD91 TOP3
X X
Standard Standard
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BTA40 and BTA/BTB41 Series
ORDERING INFORMATION
BT A 40 TRIAC SERIES INSULATION: A: insulated B: non insulated CURRENT: 40: 40A in RD91 41: 40A in TOP3
600 B
SENSITIVITY: B: 50mA
VOLTAGE: 600: 600V 800: 800V
OTHER INFORMATION
Part Number BTA40-xxxB BTA/BTB41-xxxB
Note: xxx= voltage
Marking BTA40xxxB BTA/BTB41xxxB
Weight 20.0 g 4.5 g
Base quantity 25 120
Packing mode Bulk Bulk
Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle).
P (W) 50 40 30 20 10 IT(RMS) (A) 0 0 5 10 15 20 25 30 35 40
Fig. 2: RMS on-state current versus case temperature (full cycle).
IT(RMS) (A)
BTA40/BTB41
45 40 35 30 25 20 15 10 5 0
BTA41
Tc(C) 0 25 50 75 100 125
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BTA40 and BTA/BTB41 Series
Fig. 3: Relative variation of thermal impedance versus pulse duration.
K=[Zth/Rth] 1E+0
Zth(j-c)
Fig. 4: values).
ITM (A) 400 100
On-state
characteristics
(maximum
Tj max
1E-1
Zth(j-a) BTA/BTB41
1E-2 tp (s) 1E-3 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
10
Tj=25C
VTM (V) 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Tj max.: Vto = 0.85 V Rd = 10 m
4.0
4.5
5.0
Fig. 5: Surge peak on-state current versus number of cycles.
Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I t.
ITSM (A), I t (A s) 3000
ITSM
ITSM (A) 450 400 350 300 250 200 150 100 50 0
t=20ms
Non repetitive Tj initial=25C
One cycle
1000
dI/dt limitation: 50A/s
It
Repetitive Tc=70C
Number of cycles 1 10 100 1000
tp (ms) 100 0.01 0.10 1.00
Tj initial=25C
10.00
Fig. 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values).
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25C] 2.5 2.0
IGT
Fig. 8: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 80 100 120 140 0.4 0.1
1.5
IH & IL
1.0 0.5 Tj(C) 0.0 -40 -20 0 20 40 60
(dV/dt)c (V/s) 1.0 10.0 100.0
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BTA40 and BTA/BTB41 Series
Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified] 6 5 4 3 2 1 0 0 25 50 Tj (C) 75 100 125
PACKAGE MECHANICAL DATA RD91 (Plastic)
DIMENSIONS
L2 A2 L1
REF.
Millimeters Min. Max. 40.00 30.30 22.00 27.00 16.50 24.00 14.00 3.50 3.00 0.90 4.50 13.60 3.50 1.90 43 38 Min.
Inches Max. 1.575 1.193 0.867 1.063 0.650 0.945 0.551 0.138 0.118 0.035 0.177 0.535 0.138 0.075 43 38
B2 C B1
C2 A1
C1
N2
N1 B F
E3 I A
A A1 A2 B B1 B2 C C1 C2 E3 F I L1 L2 N1 N2
29.90
1.177
13.50
0.531
1.95 0.70 4.00 11.20 3.10 1.70 33 28
0.077 0.027 0.157 0.441 0.122 0.067 33 28
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BTA40 and BTA/BTB41 Series
PACKAGE MECHANICAL DATA TOP3 Ins.(Plastic)
DIMENSIONS REF. Millimeters Min. A B C D E F G H J K L P R 4.4 1.45 14.35 0.5 2.7 15.8 20.4 15.1 5.4 3.4 4.08 1.20 4.60 Typ. Max. 4.6 1.55 15.60 0.7 2.9 16.5 21.1 15.5 5.65 3.65 4.17 1.40 Min. 0.173 0.057 0.565 0.020 0.106 0.622 0.815 0.594 0.213 0.134 0.161 0.047 0.181 Inches Typ. Max. 0.181 0.061 0.614 0.028 0.114 0.650 0.831 0.610 0.222 0.144 0.164 0.055
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Swit zerland - United Kingdom http ://www.st.com
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