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| Composite Transistors XN04402 (XN4402) Silicon PNP epitaxial planar type Unit: mm For general amplification Features * Two elements incorporated into one package * Reduction of the mounting area and assembly cost by one half 4 2.90+0.20 -0.05 1.90.1 (0.95) (0.95) 5 6 0.16+0.10 -0.06 1.50+0.25 -0.05 2.8+0.2 -0.3 3 2 1 0.30+0.10 -0.05 Basic Part Number * 2SB0710 (2SB710) x 2 0.50+0.10 -0.05 10 1.1+0.2 -0.1 (0.65) Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating -60 -50 -5 -500 -1 300 150 -55 to +150 Unit V V V mA A mW C C 1: Collector (Tr1) 2: Base (Tr2) 3: Emitter (Tr2) EIAJ : SC-74 0 to 0.1 Marking Symbol: OH Internal Connection 4 5 6 Tr2 1.1+0.3 -0.1 4: Collector (Tr2) 5: Base (Tr1) 6: Emitter (Tr1) Mini6-G1 Package Tr1 3 2 1 Electrical Characteristics Ta = 25C 3C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio * Collector-emitter saturation voltage * Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) * Symbol VCBO VCEO VEBO ICBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions IC = -10 A, IE = 0 IC = -2 mA, IB = 0 IE = -10 A, IC = 0 VCB = -20 V, IE = 0 VCE = -10 V, IC = -150 mA VCE = -10 V, IC = -500 mA IC = -300 mA, IB = -30 mA IC = -300 mA, IB = -30 mA VCB = -10 V, IE = 50 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz Min -60 -50 -5 Typ Max Unit V V V - 0.1 85 40 - 0.35 - 0.60 -1.1 200 6 15 -1.5 340 A V V MHz pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement Note) The part number in the parenthesis shows conventional part number. Publication date: February 2004 SJJ00072BED 0.40.2 5 1 XN04402 PT Ta 500 -800 -700 IC VCE Ta = 25C IB = -10 mA -9 mA -8 mA -7 mA -6 mA -5 mA -4 mA -3 mA -2 mA -1 mA -800 -700 IC I B VCE = -10 V Ta = 25C Total power dissipation PT (mW) 400 Collector current IC (mA) 300 -500 -400 -300 -200 -100 200 100 -100 0 0 0 40 80 120 160 0 0 -4 -8 -12 -16 -20 Collector current IC (mA) -600 -600 -500 -400 -300 -200 0 -2 -4 -6 -8 -10 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Base current IB (mA) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -10 VBE(sat) IC -102 hFE IC 300 VCE = -10 V Base-emitter saturation voltage VBE(sat) (V) IC / IB = 10 IC / IB = 10 -1 -10 Forward current transfer ratio hFE 250 200 Ta = 75C 25C -10-1 25C Ta = 75C 25C -1 Ta = -25C 75C 150 -25C 100 -25C -10-2 -10-1 50 -10-3 -1 -10 -102 -103 -10-2 -1 -10 -102 -103 0 -1 -10 -102 -103 Collector current IC (mA) Collector current IC (mA) Collector current IC (mA) fT I E Collector output capacitance C (pF) (Common base, input open circuited) ob 240 VCB = -10 V Ta = 25C 24 Cob VCB f = 1 MHz IE = 0 Ta = 25C -120 VCER RBE IC = -2 mA Ta = 25C Transition frequency fT (MHz) 200 20 Collector-emitter voltage (V) (Resistor between B and E) VCER -100 160 16 -80 120 12 -60 80 8 -40 40 4 -20 0 1 10 102 0 -1 -10 -102 0 1 10 102 103 Emitter current IE (mA) Collector-base voltage VCB (V) Base-emitter resistance RBE (k) 2 SJJ00072BED |
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